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Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Ultramicroscopy, 2024-10, Vol.264, p.114006, Article 114006

2024

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Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Applied physics express, 2024-01, Vol.17 (1), p.16505

2024

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Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91 (23), Article 235305

2015

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Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Journal of applied physics, 2020-11, Vol.128 (18)

2020

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Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

Nano letters, 2019-12, Vol.19 (12), p.8801-8805

2019

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Composition modulation by twinning in InAsSb nanowires

Nanotechnology, 2019-08, Vol.30 (32), p.324005-324005

2019

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Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs 1- x Sb x Shell on InAs Nanowires

Nano letters, 2019-12, Vol.19 (12), p.8801-8805

2019

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Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Journal of applied physics, 2015-07, Vol.118 (3)

2015

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Resistive switching in optoelectronic III-V materials based on deep traps

Scientific reports, 2018-06, Vol.8 (1), p.9483-7, Article 9483

2018

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Non-topographic current contrast in scanning field emission microscopy

Royal Society open science, 2021-07, Vol.8 (7), p.210511-210511

2021

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Lazarevicite-type short-range ordering in ternary III-V nanowires

Physical review. B, 2016-11, Vol.94 (19), Article 195306

2016

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Meandering of overgrown v-shaped defects in epitaxial GaN layers

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Physical review. B, 2018-03, Vol.97 (11), Article 115433

2018

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Importance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfaces

Physical review. B, 2016-05, Vol.93 (19), Article 195444

2016

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Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯) surfaces

Applied physics letters, 2017-01, Vol.110 (2)

2017

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Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Physical review. B, 2020-12, Vol.102 (24), Article 245304

2020

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Correction of nonlinear lateral distortions of scanning probe microscopy images

Ultramicroscopy, 2014-01, Vol.136, p.86-90

2014

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Effective mass of a two-dimensional √3×√3 Ga single atomic layer on Si(111)

Surface science, 2014-12, Vol.630, p.225-228

2014

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Intrinsic electronic properties of high-quality wurtzite InN

Physical review. B, 2016-12, Vol.94 (24), Article 245201

2016

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Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2023-07, Vol.41 (4)

2023

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Polarity-dependent pinning of a surface state

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 205309

2015

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GaAs(110) Surface Modifications Introduced by Hydrogen

2022 Compound Semiconductor Week (CSW), 2022, p.1-2

2022

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Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110)

Physical review materials, 2022-12, Vol.6 (12), Article 124603

2022

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Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

Composition modulation by twinning in InAsSb nanowires

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs 1- x Sb x Shell on InAs Nanowires

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Resistive switching in optoelectronic III-V materials based on deep traps

Non-topographic current contrast in scanning field emission microscopy

Lazarevicite-type short-range ordering in ternary III-V nanowires

Meandering of overgrown v-shaped defects in epitaxial GaN layers

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Importance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfaces

Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯) surfaces

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Correction of nonlinear lateral distortions of scanning probe microscopy images

Effective mass of a two-dimensional √3×√3 Ga single atomic layer on Si(111)

Intrinsic electronic properties of high-quality wurtzite InN

Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs(110) facets

Polarity-dependent pinning of a surface state

GaAs(110) Surface Modifications Introduced by Hydrogen

Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110)

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