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Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.448-453

2006

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A study of NBTI by the statistical analysis of the properties of individual defects in pMOSFETS

2009 IEEE International Integrated Reliability Workshop Final Report, 2009, p.30-35

2009

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Practical aspects of reliability analysis for IC designs

2006 43rd ACM/IEEE Design Automation Conference, 2006, p.193-198

2006

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Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI

2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, p.218-221

2018

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A new smart device array structure for statistical investigations of BTI degradation and recovery

2011 International Reliability Physics Symposium, 2011, p.2B.6.1-2B.6.5

2011

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Hot-carrier and recovery effect on p-channel lateral DMOS

2011 IEEE International Integrated Reliability Workshop Final Report, 2011, p.77-81

2011

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Highly accurate product-level aging monitoring in 40nm CMOS

2010 Symposium on VLSI Technology, 2010, p.27-28

2010

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The effect of recovery on NBTI characterization of thick non-nitrided oxides

2008 IEEE International Integrated Reliability Workshop Final Report, 2008, p.1-6

2008

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Device reliability challenges for modern semiconductor circuit design – a review

Advances in radio science, 2009-05, Vol.7 (14), p.201-211

SchlÈnder, C

2009

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New insights on the PBTI phenomena in SiON pMOSFETs

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1891-1894

2012

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Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability

2007 IEEE International Electron Devices Meeting, 2007, p.801-804

2007

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Applying the universal recovery equation for fast wafer level reliability monitoring NBTI assessment

2009 IEEE International Reliability Physics Symposium, 2009, p.981-987

2009

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Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring

2008 IEEE International Integrated Reliability Workshop Final Report, 2008, p.86-90

2008

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On the degradation of p-MOSFETs in analog and RF circuits under inhomogeneous negative bias temperature stress

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.5-10

2003

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MOS transistor reliability under analog operation

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1545-1554

2000

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The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

2010 IEEE International Reliability Physics Symposium, 2010, p.7-15

2010

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On the impact of the layout of MOSFET test-structures on NBTI-, PBTI- and HCS-lifetime due to PID

2012 IEEE International Integrated Reliability Workshop Final Report, 2012, p.85-89

2012

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HCI vs. BTI? - Neither one's out

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.2F.4.1-2F.4.6

2012

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Analgesia with opioids in the paediatric patient.

Schmerz (Berlin, Germany), 1992-12, Vol.6 (4), p.229

Schlünder, C

1992

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On the PBTI degradation of pMOSFETs and its impact on IC lifetime

2011 IEEE International Integrated Reliability Workshop Final Report, 2011, p.7-11

2011

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The impact of recovery on BTI reliability assessments

2010 IEEE International Integrated Reliability Workshop Final Report, 2010, p.12-16

2010

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Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring

2008 IEEE International Integrated Reliability Workshop Final Report, 2008, p.1-17

2008

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NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification

Microelectronics and reliability, 2018-03, Vol.82, p.1-10

2018

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Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits

Microelectronics and reliability, 2005, Vol.45 (1), p.39-46

2005

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Physical understanding and modelling of new hot-carrier degradation effect on PLDMOS transistor

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.XT.11.1-XT.11.6

2012

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Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

A study of NBTI by the statistical analysis of the properties of individual defects in pMOSFETS

Practical aspects of reliability analysis for IC designs

Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI

A new smart device array structure for statistical investigations of BTI degradation and recovery

Hot-carrier and recovery effect on p-channel lateral DMOS

Highly accurate product-level aging monitoring in 40nm CMOS

The effect of recovery on NBTI characterization of thick non-nitrided oxides

Device reliability challenges for modern semiconductor circuit design – a review

New insights on the PBTI phenomena in SiON pMOSFETs

Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability

Applying the universal recovery equation for fast wafer level reliability monitoring NBTI assessment

Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring

On the degradation of p-MOSFETs in analog and RF circuits under inhomogeneous negative bias temperature stress

MOS transistor reliability under analog operation

The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

On the impact of the layout of MOSFET test-structures on NBTI-, PBTI- and HCS-lifetime due to PID

HCI vs. BTI? - Neither one's out

Analgesia with opioids in the paediatric patient.

On the PBTI degradation of pMOSFETs and its impact on IC lifetime

The impact of recovery on BTI reliability assessments

Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring

NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification

Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits

Physical understanding and modelling of new hot-carrier degradation effect on PLDMOS transistor

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