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Intersubband relaxation in GaAs-AlxGa1-xAs quantum well structures observed directly by an infrared bleaching technique

Physical review letters, 1987, Vol.59 (12), p.1345-1348

1987

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Percolation metal-insulator transitions in the two-dimensional electron system of AlGaAs/GaAs heterostructures

Physical review letters, 1994-12, Vol.73 (23), p.3141-3144

1994

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Anisotropic plasmon dispersion in a lateral quantum-wire superlattice

Physical review letters, 1990-10, Vol.65 (14), p.1804-1807

1990

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Many body effects in a modulation-doped semiconductor quantum well

Physical review letters, 1987-12, Vol.59 (23), p.2690-2692

1987

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Momentum conservation in tunneling processes between Barrier-separated 2D-electron-gas systems

Physical review letters, 1989-11, Vol.63 (19), p.2116-2119

1989

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Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures

Journal of applied physics, 1990-02, Vol.67 (4), p.1805-1813

1990

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10-Gb/s standard fiber transmission using directly modulated 1.55-μm quantum-well DFB lasers

IEEE photonics technology letters, 1995-11, Vol.7 (11), p.1357-1359

1995

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Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum Wells

Europhysics letters, 1988-05, Vol.6 (2), p.183-188

1988

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Optical quantum-confined Stark effect in GaAs quantum wells

Physical review letters, 1987-10, Vol.59 (15), p.1748-1751

1987

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Compositional influence on photoluminescence linewidth and Stokes shift in InxAlzGa1−x−zAs/InyAluGa1−u−yAs/InP heterostructures grown by molecular beam epitaxy

Journal of applied physics, 1995-05, Vol.77 (10), p.5440-5442

1995

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Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1685-1690

1994

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Characterization of high-quality molecular beam epitaxial grown InxAlzGa1−x−zAs/InyAluGa1−u−yAs/InP heterostructures

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.159-163

1995

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Current scaling and electron heating between integer quantum Hall plateaus in GaAs/AlxGa1-xAs heterostructures

Semiconductor science and technology, 1995-07, Vol.10, p.959

1995

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Bistability in the current-induced breakdown of the quantum Hall effect

Semiconductor science and technology, 1993-12, Vol.8 (12), p.2062-2068

1993

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Ultrasonic approach to the integer and fractional quantum Hall effect

Surface science, 1994-03, Vol.305 (1), p.83-86

1994

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Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry

Applied surface science, 1992, Vol.54, p.477-481

1992

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Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures

Applied physics letters, 1985-02, Vol.46 (4), p.411-413

1985

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Quadratic electro-optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gap

Applied physics letters, 1986-04, Vol.48 (15), p.989-991

1986

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Optically detected nuclear magnetic resonance and Knight shift in AlxGa1−xAs/GaAs heterostructures

Solid state communications, 1991-05, Vol.78 (5), p.459-464

1991

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Spectroscopic ellipsometry : a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47-xAs layers on InP in the wavelength range 280-1900 nm

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-11, Vol.21 (2-3), p.174-176

1993

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Energy levels in quantum wires studied by tunneling and magnetotransport experiments

Applied physics letters, 1990-07, Vol.57 (3), p.261-263

1990

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Carrier capture in intermixed quantum wires with sharp lateral confinement

Applied physics letters, 1990, Vol.56 (1), p.48-50

1990

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Design and application of a femtosecond optical parametric oscillator for time-resolved spectroscopy of semiconductor heterostructures

Applied physics. B, Lasers and optics, 1995-05, Vol.60 (5), p.459-467

1995

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Novel far-infrared-photoconductor based on photon-induced interedge channel scattering

Applied physics letters, 1991-05, Vol.58 (20), p.2231-2233

1991

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Interdiffusion behavior in n -doped and undoped GaInAs/AlGaInAs multiple-quantum-well structures grown by molecular-beam epitaxy

Journal of applied physics, 1995-09, Vol.78 (5), p.3534-3536

1995

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Intersubband relaxation in GaAs-AlxGa1-xAs quantum well structures observed directly by an infrared bleaching technique

Percolation metal-insulator transitions in the two-dimensional electron system of AlGaAs/GaAs heterostructures

Anisotropic plasmon dispersion in a lateral quantum-wire superlattice

Many body effects in a modulation-doped semiconductor quantum well

Momentum conservation in tunneling processes between Barrier-separated 2D-electron-gas systems

Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures

10-Gb/s standard fiber transmission using directly modulated 1.55-μm quantum-well DFB lasers

Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum Wells

Optical quantum-confined Stark effect in GaAs quantum wells

Compositional influence on photoluminescence linewidth and Stokes shift in InxAlzGa1−x−zAs/InyAluGa1−u−yAs/InP heterostructures grown by molecular beam epitaxy

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

Characterization of high-quality molecular beam epitaxial grown InxAlzGa1−x−zAs/InyAluGa1−u−yAs/InP heterostructures

Current scaling and electron heating between integer quantum Hall plateaus in GaAs/AlxGa1-xAs heterostructures

Bistability in the current-induced breakdown of the quantum Hall effect

Ultrasonic approach to the integer and fractional quantum Hall effect

Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry

Molecular beam epitaxial growth and transport properties of modulation-doped AlGaAs-GaAs heterostructures

Quadratic electro-optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gap

Optically detected nuclear magnetic resonance and Knight shift in AlxGa1−xAs/GaAs heterostructures

Spectroscopic ellipsometry : a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47-xAs layers on InP in the wavelength range 280-1900 nm

Energy levels in quantum wires studied by tunneling and magnetotransport experiments

Carrier capture in intermixed quantum wires with sharp lateral confinement

Design and application of a femtosecond optical parametric oscillator for time-resolved spectroscopy of semiconductor heterostructures

Novel far-infrared-photoconductor based on photon-induced interedge channel scattering

Interdiffusion behavior in n -doped and undoped GaInAs/AlGaInAs multiple-quantum-well structures grown by molecular-beam epitaxy

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