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Clear Air Turbulence Resolved by Numerical Weather Prediction Model Validated by Onboard and Virtual Flight Data

Geophysical research letters, 2023-06, Vol.50 (12), p.n/a

2023

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Growth and characterization of self-assembled Ge-rich islands on Si

Semiconductor science and technology, 1996-11, Vol.11 (11S), p.1521-1528

1996

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Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

Applied physics letters, 1995-08, Vol.67 (9), p.1292-1294

1995

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Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction

Applied physics letters, 1999-05, Vol.74 (20), p.2978-2980

1999

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Self-organized MBE growth of Ge-rich SiGe dots on Si(100)

Journal of crystal growth, 1995-12, Vol.157 (1), p.260-264

1995

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Growth of self-assembled homogeneous SiGe-dots on Si(100)

Thin solid films, 1997-02, Vol.294 (1), p.291-295

1997

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Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods

Thin solid films, 1998-12, Vol.336 (1), p.1-8

1998

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Self-assembled growth of Sn on Ge (001)

Thin solid films, 1997-02, Vol.294 (1), p.308-310

1997

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High-resolution x-ray diffraction from multilayered self-assembled Ge dots

Physical review. B, Condensed matter, 1997-06, Vol.55 (23), p.15652-15663

1997

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X-ray diffraction and reflection from self-assembled Ge dots

Thin solid films, 1997-02, Vol.294 (1), p.296-299

1997

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Segregation of n-dopants on SiGe surfaces

Applied surface science, 1996-08, Vol.102, p.98-101

1996

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Structural characterization of self-assembled Ge dot multilayers by X-ray diffraction and reflectivity methods

Physica. E, Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1), p.789-793

1998

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Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

Applied surface science, 1996-08, Vol.102, p.327-330

1996

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Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots

Applied physics letters, 2001-01, Vol.78 (4), p.451-453

2001

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SiGe wires and dots grown by local epitaxy

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.1060-1064

1995

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Local epitaxy of Si/SiGe wires and dots

Journal of crystal growth, 1995-12, Vol.157 (1), p.270-275

1995

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Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE

Physical review. B, Condensed matter, 1999-07, Vol.60 (3), p.1792-1798

1999

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Fabrication and characterization of Si/SiGe nanometer structures

Microelectronic engineering, 1995-02, Vol.27 (1), p.83-86

1995

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Fabrication and characterisation of locally grown SiGe wires and dots

Materials science and technology, 1995-04, Vol.11 (4), p.407-409

1995

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Self-assembled Ge dots: Growth, characterization, ordering, and applications

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-05, Vol.16 (3), p.1575-1581