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Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

ACS applied materials & interfaces, 2021-07, Vol.13 (26), p.31248-31259

2021

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Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Applied physics letters, 2024-06, Vol.124 (24)

2024

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Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS applied materials & interfaces, 2017-03, Vol.9 (8), p.7761-7771

2017

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Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Materials, 2022-01, Vol.15 (3), p.830

2022

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Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Nanomaterials (Basel, Switzerland), 2020-04, Vol.10 (4), p.803

2020

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Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Carbon (New York), 2019-08, Vol.149, p.546-555

2019

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Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Journal of crystal growth, 2020-06, Vol.539, p.125624, Article 125624

2020

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Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

Materials science in semiconductor processing, 2024-05, Vol.174, p.108220, Article 108220

2024

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Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

Physica status solidi. PSS-RRL. Rapid research letters, 2020-02, Vol.14 (2), p.n/a

2020

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Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Applied sciences, 2021-11, Vol.11 (22), p.11052

2021

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Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

Applied surface science, 2022-03, Vol.579, p.152136, Article 152136

2022

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High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

ACS applied electronic materials, 2019-11, Vol.1 (11), p.2342-2354

2019

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Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate”

ACS applied materials & interfaces, 2022-08, Vol.14 (31), p.36287-36287

2022

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Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP advances, 2020-12, Vol.10 (12), p.125017-125017-7

2020

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Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

C (Basel), 2019-09, Vol.5 (3), p.53

2019

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Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Materials, 2023-08, Vol.16 (16), p.5638

2023

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Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation

Physica status solidi. A, Applications and materials science, 2022-11, Vol.219 (21), p.n/a

2022

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Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Microelectronic engineering, 2024-01, Vol.283, p.112103, Article 112103

2024

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Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

ACS applied electronic materials, 2022-01, Vol.4 (1), p.406-415

2022

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Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Advanced materials interfaces, 2023-01, Vol.10 (1), p.n/a

2023

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Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Applied sciences, 2020-04, Vol.10 (7), p.2440

2020

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Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition

Materials science in semiconductor processing, 2024-05, Vol.174, p.108244, Article 108244

2024

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Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP advances, 2016-07, Vol.6 (7)

2016

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Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

Advanced materials interfaces, 2022-08, Vol.9 (22), p.n/a

2022

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Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices

Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate”

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Electron Irradiation Effects on Single‐Layer MoS2 Obtained by Gold‐Assisted Exfoliation

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

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