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Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon

Journal of applied physics, 2024-02, Vol.135 (6)

2024

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Molecular beam epitaxy growth of GaAs1−xBix

Applied physics letters, 2003-04, Vol.82 (14), p.2245-2247

2003

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In-plasma analysis of plasma–surface interactions

Review of scientific instruments, 2023-08, Vol.94 (8)

2023

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Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

Journal of applied physics, 2020-12, Vol.128 (24)

2020

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Optical properties of germania and titania at 1064 nm and at 1550 nm

Classical and quantum gravity, 2024-06, Vol.41 (12), p.125006

2024

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High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing

Physical review letters, 2019-07, Vol.123 (4), p.045501-045501, Article 045501

2019

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Intercomparison of ion beam analysis software for the simulation of backscattering spectra from two-dimensional structures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-10, Vol.385, p.65-73

2016

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Low-energy proton calibration and energy-dependence linearization of EBT-XD radiochromic films

Review of scientific instruments, 2019-08, Vol.90 (8)

2019

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Thomson parabola and time-of-flight detector cross-calibration methodology on the ALLS 100 TW laser-driven ion acceleration beamline

Review of scientific instruments, 2020-10, Vol.91 (10)

2020

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Exploration of co-sputtered Ta2O5–ZrO2 thin films for gravitational-wave detectors

Classical and quantum gravity, 2021-10, Vol.38 (19)

2021

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Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

Classical and quantum gravity, 2018-04, Vol.35 (7), p.75001

2018

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Effects of elevated-temperature deposition on the atomic structure of amorphous Ta2O5 films

APL materials, 2023-12, Vol.11 (12), p.121112-121112-8

2023

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Computer simulation of ion beam analysis: Possibilities and limitations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2011-12, Vol.269 (24), p.3006-3013

2011

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Hydrogen Concentration and Mechanical Dissipation upon Annealing in Zirconia-doped Tantala Thin Films for Gravitational Wave Observatory Mirrors

Journal of physics. Conference series, 2022-10, Vol.2326 (1), p.12020

2022

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Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-03, Vol.371, p.161-166

2016

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Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x

Applied physics letters, 2005-03, Vol.86 (11)

2005

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Discrete periodic melting point observations for nanostructure ensembles

Physical review letters, 2000-10, Vol.85 (17), p.3560-3563

2000

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Microstructural evolution in H ion induced splitting of freestanding GaN

Applied physics letters, 2008-07, Vol.93 (3), p.031916-031916-3

2008

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Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2023-05, Vol.538, p.17-23

2023

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Thin-film differential scanning nanocalorimetry: heat capacity analysis

Thermochimica acta, 2004-03, Vol.412 (1), p.13-23

2004

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Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon

Physical review. B, Condensed matter and materials physics, 2007-02, Vol.75 (7), Article 075201

2007

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Ordered coalescence of Si nanocrystals in SiO2

Physical review. B, Condensed matter and materials physics, 2005-04, Vol.71 (16), p.161310.1-161310.4

2005

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Thermal evolution of defects produced by implantation of H, D and He in Silicon

Applied surface science, 2008-10, Vol.255 (1), p.63-67

2008

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The fluence effect in hydrogen-ion cleaving of silicon at the sub-100-nm scale

Applied physics. A, Materials science & processing, 2005-04, Vol.80 (7), p.1455-1462

2005

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High photoluminescence in erbium-doped chalcogenide thin films

Journal of non-crystalline solids, 2000-08, Vol.272 (2), p.200-208

2000

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Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon

Molecular beam epitaxy growth of GaAs1−xBix

In-plasma analysis of plasma–surface interactions

Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

Optical properties of germania and titania at 1064 nm and at 1550 nm

High Precision Detection of Change in Intermediate Range Order of Amorphous Zirconia-Doped Tantala Thin Films Due to Annealing

Intercomparison of ion beam analysis software for the simulation of backscattering spectra from two-dimensional structures

Low-energy proton calibration and energy-dependence linearization of EBT-XD radiochromic films

Thomson parabola and time-of-flight detector cross-calibration methodology on the ALLS 100 TW laser-driven ion acceleration beamline

Exploration of co-sputtered Ta2O5–ZrO2 thin films for gravitational-wave detectors

Effect of elevated substrate temperature deposition on the mechanical losses in tantala thin film coatings

Effects of elevated-temperature deposition on the atomic structure of amorphous Ta2O5 films

Computer simulation of ion beam analysis: Possibilities and limitations

Hydrogen Concentration and Mechanical Dissipation upon Annealing in Zirconia-doped Tantala Thin Films for Gravitational Wave Observatory Mirrors

Hydrogen analysis depth calibration by CORTEO Monte-Carlo simulation

Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x

Discrete periodic melting point observations for nanostructure ensembles

Microstructural evolution in H ion induced splitting of freestanding GaN

Formation of crystalline Si1-xGex top layers by ion implantation in crystalline silicon

Thin-film differential scanning nanocalorimetry: heat capacity analysis

Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon

Ordered coalescence of Si nanocrystals in SiO2

Thermal evolution of defects produced by implantation of H, D and He in Silicon

The fluence effect in hydrogen-ion cleaving of silicon at the sub-100-nm scale

High photoluminescence in erbium-doped chalcogenide thin films

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