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Influence of a-Si:H/ITO Interface Properties on Performance of Heterojunction Solar Cells

Energy procedia, 2013, Vol.38, p.770-776

2013

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Manufacturing and Characterization of III-V on Silicon Multijunction Solar Cells

Energy procedia, 2016-08, Vol.92, p.242-247

2016

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Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011, Vol.58 (8), p.2473-2482

2011

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Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473-2482

2011

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Extended MASTAR Modeling of DIBL in UTB and UTBB SOI MOSFETs

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.247-251

2012

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Three-Dimensional Simulation of the Effect of E-Beam Lithography Induced Line-Edge Roughness on N-Type Metal-Oxide-Semiconductor Transistor Electrical Characteristics for a 50 nm Technology

Japanese Journal of Applied Physics, 2004-06, Vol.43 (6S), p.3838

2004

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22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2019, p.35-38

2019

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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1568-1574

2013

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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1568-1574

2013

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Influence of carrier density spatial heterogeneities on the electrical breakdown of crystalline silicon solar cells: Experiment and simulation

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.0047-0050

2013

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Multi- V UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473-2482

2011

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Electrical modeling of the GaAs/InP wafer bonded heterojunction

Physica status solidi. C, 2014-02, Vol.11 (2), p.222-227

2014

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Multi-[Formula Omitted] UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2473

2011

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Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.267-270

2008

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RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, p.1-4

2019

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Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

2020 15th European Microwave Integrated Circuits Conference (EuMIC), 2021, p.81-84

2021

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6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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Experimental Investigation of the Impact of Implanted Phosphorus Dose and Anneal on Dopant Diffusion and Activation in Germanium

MRS proceedings, 2008, Vol.1070, Article 1070-E01-08

2008

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TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction

2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.283-286

2010

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3D interconnect optimization for single channel 100-GBps transmission in a photonic interposer

2017 IEEE 21st Workshop on Signal and Power Integrity (SPI), 2017, p.1-4

2017

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A nanowire gauge factor extraction method for material comparison and in-line monitoring

2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS), 2015, p.361-364

2015

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Fine charge sensing using a silicon nanowire for biodetection

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, p.1-2

2016

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Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling

2012 13th International Conference on Ultimate Integration on Silicon (ULIS), 2012, p.97-100

2012

Volltextzugriff (PDF)

Organic Electronics for Point-of-Care Metabolite Monitoring

Trends in biotechnology (Regular ed.), 2018-01, Vol.36 (1), p.45-59

2018

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Screen-printed organic electrochemical transistors for metabolite sensing

MRS communications, 2015-09, Vol.5 (3), p.507-511

2015

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Influence of a-Si:H/ITO Interface Properties on Performance of Heterojunction Solar Cells

Manufacturing and Characterization of III-V on Silicon Multijunction Solar Cells

Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Extended MASTAR Modeling of DIBL in UTB and UTBB SOI MOSFETs

Three-Dimensional Simulation of the Effect of E-Beam Lithography Induced Line-Edge Roughness on N-Type Metal-Oxide-Semiconductor Transistor Electrical Characteristics for a 50 nm Technology

22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues

Influence of carrier density spatial heterogeneities on the electrical breakdown of crystalline silicon solar cells: Experiment and simulation

Multi- V UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Electrical modeling of the GaAs/InP wafer bonded heterojunction

Multi-[Formula Omitted] UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility

RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology

Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts

Experimental Investigation of the Impact of Implanted Phosphorus Dose and Anneal on Dopant Diffusion and Activation in Germanium

TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction

3D interconnect optimization for single channel 100-GBps transmission in a photonic interposer

A nanowire gauge factor extraction method for material comparison and in-line monitoring

Fine charge sensing using a silicon nanowire for biodetection

Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling

Organic Electronics for Point-of-Care Metabolite Monitoring

Screen-printed organic electrochemical transistors for metabolite sensing

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