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Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

Semiconductors (Woodbury, N.Y.), 2019-11, Vol.53 (11), p.1472-1478

2019

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X-ray multiple diffraction as a new approach to structural characterization of III-nitride layers

Physica status solidi. C, 2013-03, Vol.10 (3), p.476-480

2013

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Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy

Technical physics letters, 2023-12, Vol.49 (Suppl 2), p.S142-S145

2023

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High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia

Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (13), p.579-586

2023

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HVPE growth of α- and ε-Ga2O3 on patterned sapphire substrates

Journal of physics. Conference series, 2019, Vol.1400 (5)

2019

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Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

APL materials, 2022-06, Vol.10 (6), p.061102-061102-8

2022

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Electrical Conductive and Photoelectrical Properties of Heterostructures Based on Gallium and Chromium Oxides with Corundum Structure

Technical physics letters, 2023-12, Vol.49 (Suppl 4), p.S355-S359

2023

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Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S222-S226

2023

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Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy

Semiconductors (Woodbury, N.Y.), 2019-06, Vol.53 (6), p.780-783

2019

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The Effect of Liquid Silicon on the AlN Crystal Growth

Semiconductors (Woodbury, N.Y.), 2022-05, Vol.56 (5), p.281-287

2022

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Record Thick κ(ε)-Ga2O3Epitaxial Layers Grown on GaN/c-Sapphire

Technical physics, 2023, Vol.68 (12), p.689-694

2023

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Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12076

2018

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Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates

Technical physics letters, 2019-10, Vol.45 (10), p.1031-1034

2019

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A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

Technical physics letters, 2018-12, Vol.44 (12), p.1127-1129

2018

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Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures

Sensors and actuators. B, Chemical, 2022-08, Vol.364, p.131904, Article 131904

2022

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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

Journal of physics. D, Applied physics, 2005-05, Vol.38 (10A), p.A111-A116

2005

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High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy

Journal of alloys and compounds, 2024-08, Vol.994, p.174687, Article 174687

2024

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Electric polarization induced by phase separation in magnetically ordered and paramagnetic states of RMn2O5 (R=Gd, Bi)

Journal of magnetism and magnetic materials, 2017-01, Vol.421, p.326-335

2017

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Room-temperature electric polarization induced by phase separation in multiferroic GdMn2O5

JETP letters, 2016-02, Vol.103 (4), p.248-253

2016

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Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

Materials today communications, 2023-03, Vol.34, p.105241, Article 105241

2023

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Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sapphire

Technical physics, 2023-12, Vol.68 (12), p.689-694

2023

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Temperature evolution of polar states in GdMn2O5 and Gd0.8Ce0.2Mn2O5

JETP letters, 2014-11, Vol.100 (6), p.407-412

2014

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Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

Materials science forum, 2007-01, Vol.556-557, p.175-178

2007

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HVPE growth of α- and ε-Ga 2 O 3 on patterned sapphire substrates

Journal of physics. Conference series, 2019-11, Vol.1400 (5), p.55049

2019

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Magnetic properties of multiferroics-semiconductors Eu sub(1-x)Ce sub(x)Mn sub(2)O sub(5)

Journal of physics. Condensed matter, 2011-11, Vol.23 (45), p.1-11

2011

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Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

X-ray multiple diffraction as a new approach to structural characterization of III-nitride layers

Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy

High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia

HVPE growth of α- and ε-Ga2O3 on patterned sapphire substrates

Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

Electrical Conductive and Photoelectrical Properties of Heterostructures Based on Gallium and Chromium Oxides with Corundum Structure

Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films

Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy

The Effect of Liquid Silicon on the AlN Crystal Growth

Record Thick κ(ε)-Ga2O3Epitaxial Layers Grown on GaN/c-Sapphire

Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP

Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates

A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

Hydrogen sensors based on Pt/α-Ga2O3:Sn/Pt structures

X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As

High-quality Cr2O3 - Ga2O3 solid solutions films grown by mist-CVD epitaxy

Electric polarization induced by phase separation in magnetically ordered and paramagnetic states of RMn2O5 (R=Gd, Bi)

Room-temperature electric polarization induced by phase separation in multiferroic GdMn2O5

Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films

Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sapphire

Temperature evolution of polar states in GdMn2O5 and Gd0.8Ce0.2Mn2O5

Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

HVPE growth of α- and ε-Ga 2 O 3 on patterned sapphire substrates

Magnetic properties of multiferroics-semiconductors Eu sub(1-x)Ce sub(x)Mn sub(2)O sub(5)

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