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Electronic and spectral properties of Ge1−xSnx quantum dots

Journal of applied physics, 2024-06, Vol.135 (21)

2024

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Band parameters of group III–V semiconductors in wurtzite structure

Journal of applied physics, 2022-12, Vol.132 (22)

2022

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The effect of isovalent doping on the electronic band structure of group IV semiconductors

Journal of physics. D, Applied physics, 2021-02, Vol.54 (8), p.85102

2021

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Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance

Materials advances, 2020-09, Vol.1 (6), p.1886-1894

2020

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Optical properties of orthorhombic germanium selenide: an anisotropic layered semiconductor promising for optoelectronic applications

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-10, Vol.9 (41), p.14838-14847

2021

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Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo1–xWxSe2 Alloys

ACS omega, 2021-08, Vol.6 (30), p.19893-19900

2021

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Stress-Tuned Optical Transitions in Layered 1T-MX2 (M=Hf, Zr, Sn; X=S, Se) Crystals

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (19), p.3433

2022

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Strong Substrate Strain Effects in Multilayered WS2 Revealed by High-Pressure Optical Measurements

ACS applied materials & interfaces, 2022-05, Vol.14 (17), p.19857-19868

2022

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Electronic band structure of semiconductor alloys: From ab initio to k·p via computational alchemy, on example of Ge1-xSnx alloy

Computational materials science, 2021-02, Vol.187, Article 110052

2021

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Electronic band structure of semiconductor alloys: From ab initio to k · p via computational alchemy, on example of Ge 1 - x Sn x alloy

Computational materials science, 2021-02, Vol.187, p.110052, Article 110052

2021

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Strong Substrate Strain Effects in Multilayered WS 2 Revealed by High-Pressure Optical Measurements

ACS applied materials & interfaces, 2022-05, Vol.14 (17), p.19857-19868

2022

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Probing Defects in MoS2 Van der Waals Crystal through Deep‐Level Transient Spectroscopy

Physica status solidi. PSS-RRL. Rapid research letters, 2020-12, Vol.14 (12), p.n/a

2020

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Probing Defects in MoS 2 Van der Waals Crystal through Deep‐Level Transient Spectroscopy

Physica status solidi. PSS-RRL. Rapid research letters, 2020-12, Vol.14 (12)

2020

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An efficient method of EM field modification around transmitting stations

Journal of Microwaves, Optoelectronics and Electromagnetic Applications, 2015-06, Vol.14 (1), p.121-131

2015

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Ab initio study of basic material properties of Fe, Co, and Ni ferromagnetic crystals

Computational materials science, 2010-05, Vol.48 (3), p.700-704

2010

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Invariant expansion of the 30-band k · p model and its parameters for III-V compounds

Physical review. B, 2022-01, Vol.105 (4), Article 045202

2022

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Stress-Tuned Optical Transitions in Layered 1T-MX 2 (M=Hf, Zr, Sn; X=S, Se) Crystals

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (19)

2022

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Stress-Tuned Optical Transitions in Layered 1T-MX[sub.2] Crystals

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (19)

2022

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An efficient method of DFT/LDA band-gap correction

Computer physics communications, 2013-12, Vol.184 (12), p.2680-2683

2013

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Towards band gap engineering via biaxial and axial strain in group IV crystals

Computational materials science, 2020-08, Vol.181, p.109729, Article 109729

2020

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Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo1–x W x Se2 Alloys

ACS omega, 2021-08, Vol.6 (30), p.19893-19900

2021

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Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo 1- x W x Se 2 Alloys

ACS omega, 2021-08, Vol.6 (30), p.19893-19900

2021

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Magneto-optical anisotropies of two-dimensional antiferromagnetic M P X 3 from first principles

Physical review. B, 2024-02, Vol.109 (5), Article 054426

2024

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Ab initio study of the temperature-dependent structural properties of Al(110)

Physical review. B, Condensed matter and materials physics, 2009-09, Vol.80 (12), Article 125429

Scharoch, Pawel

2009

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Quantum efficiency of internal photoeffects in narrow-gap semiconductors. II: Calculation results in comparison with experimental data

Journal of applied physics, 1984-03, Vol.55 (6), p.1487-1891

1984

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Electronic and spectral properties of Ge1−xSnx quantum dots

Band parameters of group III–V semiconductors in wurtzite structure

The effect of isovalent doping on the electronic band structure of group IV semiconductors

Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance

Optical properties of orthorhombic germanium selenide: an anisotropic layered semiconductor promising for optoelectronic applications

Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo1–xWxSe2 Alloys

Stress-Tuned Optical Transitions in Layered 1T-MX2 (M=Hf, Zr, Sn; X=S, Se) Crystals

Strong Substrate Strain Effects in Multilayered WS2 Revealed by High-Pressure Optical Measurements

Electronic band structure of semiconductor alloys: From ab initio to k·p via computational alchemy, on example of Ge1-xSnx alloy

Electronic band structure of semiconductor alloys: From ab initio to k · p via computational alchemy, on example of Ge 1 - x Sn x alloy

Strong Substrate Strain Effects in Multilayered WS 2 Revealed by High-Pressure Optical Measurements

Probing Defects in MoS2 Van der Waals Crystal through Deep‐Level Transient Spectroscopy

Probing Defects in MoS 2 Van der Waals Crystal through Deep‐Level Transient Spectroscopy

An efficient method of EM field modification around transmitting stations

Ab initio study of basic material properties of Fe, Co, and Ni ferromagnetic crystals

Invariant expansion of the 30-band k · p model and its parameters for III-V compounds

Stress-Tuned Optical Transitions in Layered 1T-MX 2 (M=Hf, Zr, Sn; X=S, Se) Crystals

Stress-Tuned Optical Transitions in Layered 1T-MX[sub.2] Crystals

An efficient method of DFT/LDA band-gap correction

Towards band gap engineering via biaxial and axial strain in group IV crystals

Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo1–x W x Se2 Alloys

Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo 1- x W x Se 2 Alloys

Magneto-optical anisotropies of two-dimensional antiferromagnetic M P X 3 from first principles

Ab initio study of the temperature-dependent structural properties of Al(110)

Quantum efficiency of internal photoeffects in narrow-gap semiconductors. II: Calculation results in comparison with experimental data

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