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A Transparent, High Barrier, and High Heat Substrate for Organic Electronics

Proceedings of the IEEE, 2005-08, Vol.93 (8), p.1468-1477

2005

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High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-01, Vol.16 (1), p.239-249

1998

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Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-07, Vol.15 (4), p.1881-1889

1997

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Asymmetric microtrenching during inductively coupled plasma oxide etching in the presence of a weak magnetic field

Applied physics letters, 1998-03, Vol.72 (11), p.1293-1295

1998

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Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-07, Vol.16 (4), p.2099-2107

1998

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Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-09, Vol.17 (5), p.2492-2502

1999

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The risk of upcoding in casemix systems: A comparative study

Health policy (Amsterdam), 2007-05, Vol.81 (2), p.289-299

2007

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Expanding thermal plasma for fast deposition of scratch-resistant SiCxHyOz films

Surface & coatings technology, 2004-03, Vol.180-181, p.367-371

2004

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High-rate deposition of abrasion resistant coatings using a dual-source expanding thermal plasma reactor

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2003-07, Vol.21 (4), p.1266-1271

2003

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Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-11, Vol.17 (6), p.3272-3280

1999

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Transparent hybrid inorganic/organic barrier coatings for plastic organic light-emitting diode substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.971-977

2005

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Ultrahigh barrier coating deposition on polycarbonate substrates

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-07, Vol.22 (4), p.1716-1722

2004

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Surface science issues in plasma etching

IBM journal of research and development, 1999-01, Vol.43 (1.2), p.181-197

1999

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Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

Plasma sources science & technology, 1996-05, Vol.5 (2), p.193-199

1996

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Electrodeless thin film conductance measurements using the Sommer–Tanner method

Review of scientific instruments, 1996-10, Vol.67 (10), p.3624-3626

1996

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Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-11, Vol.16 (6), p.3281-3286

1998

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Spatially resolved mass spectrometric sampling of inductively coupled plasmas using a movable sampling orifice

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-11, Vol.21 (6), p.1971-1977

2003

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Expanding thermal plasma for fast deposition of scratch-resistant SiC xH yO z films

Surface & coatings technology, 2004, Vol.180, p.367-371

2004

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Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-09, Vol.17 (5), p.2438-2446

1999

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Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2000-03, Vol.18 (2), p.848-855

2000

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Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2000-03, Vol.18 (2), p.856-863

2000

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Stripping of photoresist using a remote thermal Ar / O 2 and Ar / N 2 / O 2 plasma

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-01, Vol.21 (1), p.61-66

2003

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Selective etching of SiO[sub 2] over polycrystalline silicon using CHF[sub 3] in an inductively coupled plasma reactor. [SiO[sub 2]; Si; fluorocarbons]

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-09, Vol.17:5

1999

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Selective etching of SiO 2 over polycrystalline silicon using CHF 3 in an inductively coupled plasma reactor

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-09, Vol.17 (5), p.2492-2502

1999

Volltextzugriff (PDF)

Expanding thermal plasma for fast deposition of scratch-resistant SiCxHyOz films

Surface & coatings technology, 2004, Vol.180-81, p.367-371

2004

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A Transparent, High Barrier, and High Heat Substrate for Organic Electronics

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

Asymmetric microtrenching during inductively coupled plasma oxide etching in the presence of a weak magnetic field

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor

The risk of upcoding in casemix systems: A comparative study

Expanding thermal plasma for fast deposition of scratch-resistant SiCxHyOz films

High-rate deposition of abrasion resistant coatings using a dual-source expanding thermal plasma reactor

Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

Transparent hybrid inorganic/organic barrier coatings for plastic organic light-emitting diode substrates

Ultrahigh barrier coating deposition on polycarbonate substrates

Surface science issues in plasma etching

Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

Electrodeless thin film conductance measurements using the Sommer–Tanner method

Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

Spatially resolved mass spectrometric sampling of inductively coupled plasmas using a movable sampling orifice

Expanding thermal plasma for fast deposition of scratch-resistant SiC xH yO z films

Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection

Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Stripping of photoresist using a remote thermal Ar / O 2 and Ar / N 2 / O 2 plasma

Selective etching of SiO[sub 2] over polycrystalline silicon using CHF[sub 3] in an inductively coupled plasma reactor. [SiO[sub 2]; Si; fluorocarbons]

Selective etching of SiO 2 over polycrystalline silicon using CHF 3 in an inductively coupled plasma reactor

Expanding thermal plasma for fast deposition of scratch-resistant SiCxHyOz films

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