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Ozone-Based Atomic Layer Deposition of Alumina from TMA: Growth, Morphology, and Reaction Mechanism

Chemistry of materials, 2006-08, Vol.18 (16), p.3764-3773

2006

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Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)

Journal of applied physics, 2004-07, Vol.96 (1), p.144-149

2004

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Fabrication of GeO2 layers using a divalent Ge precursor

Applied physics letters, 2007-04, Vol.90 (16)

2007

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Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

Applied physics letters, 2008-06, Vol.92 (22)

2008

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Performance evaluation of atomic layer deposited TiO2/TiN nanolaminates used as infrared photodetectors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2024-03, Vol.42 (2)

2024

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Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

Journal of crystal growth, 2008-12, Vol.310 (24), p.5464-5468

2008

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Vibrational and electrical properties of hexagonal La2O3 films

Applied physics letters, 2007-09, Vol.91 (10)

2007

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Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

Applied physics letters, 2005-09, Vol.87 (11)

2005

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Energy-band diagram of metal/Lu2O3/silicon structures

Applied physics letters, 2004-11, Vol.85 (22), p.5316-5318

2004

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Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-05, Vol.27 (3), p.443-448

2009

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Atomic-layer deposition of Lu2O3

Applied physics letters, 2004-07, Vol.85 (4), p.630-632

2004

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Correlation between titania film structure and near ultraviolet optical absorption

Journal of applied physics, 1999-02, Vol.85 (4), p.2377-2384

1999

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X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials

Thin solid films, 2004-02, Vol.450 (1), p.124-127

2004

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X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge

Surface and interface analysis, 2006-04, Vol.38 (4), p.494-497

2006

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Short-range order in ultrathin film titanium dioxide studied by Raman spectroscopy

Applied physics letters, 2000-02, Vol.76 (9), p.1107-1109

2000

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Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

Journal of applied physics, 2002-12, Vol.92 (12), p.7675-7677

2002

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Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

Microelectronic engineering, 2008-12, Vol.85 (12), p.2411-2413

2008

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The Total Energy in the Interaction of X-Ray Photons with Capacitors

World journal of condensed matter physics, 2020, Vol.10 (4), p.159-177

2020

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X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(100) by atomic layer deposition

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-05, Vol.246 (1), p.90-95

2006

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Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies

Journal of non-crystalline solids, 2003-07, Vol.322 (1-3), p.105-110

2003

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Trends of structural and electrical properties in atomic layer deposited HfO2 films

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.11-16

2004

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Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si

Microelectronic engineering, 2007-09, Vol.84 (9), p.2263-2266

2007

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Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-07, Vol.21 (4), p.1359-1365

2003

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Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM

Microelectronics and reliability, 2007-04, Vol.47 (4-5), p.657-659

2007

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Atomic Layer Deposition of Magnetic Thin Films

Acta physica Polonica, A, 2007-12, Vol.112 (6), p.1271-1280

2007

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Ozone-Based Atomic Layer Deposition of Alumina from TMA: Growth, Morphology, and Reaction Mechanism

Oxygen diffusion in atomic layer deposited ZrO2 and HfO2 thin films on Si (100)

Fabrication of GeO2 layers using a divalent Ge precursor

Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

Performance evaluation of atomic layer deposited TiO2/TiN nanolaminates used as infrared photodetectors

Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

Vibrational and electrical properties of hexagonal La2O3 films

Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

Energy-band diagram of metal/Lu2O3/silicon structures

Investigation of interfacial layer development between thin Al2O3 films grown using atomic layer deposition and Si(100), Ge(100), or GaAs(100)

Atomic-layer deposition of Lu2O3

Correlation between titania film structure and near ultraviolet optical absorption

X-Ray reflectivity and spectroscopic ellipsometry as metrology tools for the characterization of interfacial layers in high-κ materials

X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge

Short-range order in ultrathin film titanium dioxide studied by Raman spectroscopy

Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

The Total Energy in the Interaction of X-Ray Photons with Capacitors

X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(100) by atomic layer deposition

Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies

Trends of structural and electrical properties in atomic layer deposited HfO2 films

Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si

Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM

Atomic Layer Deposition of Magnetic Thin Films

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