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Inkjet printing and low power laser annealing of silver nanoparticle traces for the realization of low resistivity lines for flexible electronics

Microelectronic engineering, 2011-08, Vol.88 (8), p.2481-2483

2011

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A passive two-way microfluidic device for low volume blood-plasma separation

Microelectronic engineering, 2019-03, Vol.209, p.28-34

2019

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Optimization of a suspended two photon polymerized microfluidic filtration system

Microelectronic engineering, 2018-08, Vol.195, p.95-100

2018

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Micro-structured rough surfaces by laser etching for heat transfer enhancement on flush mounted heat sinks

Journal of physics. Conference series, 2014-01, Vol.525 (1), p.12017-10

2014

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Wafer Level Integration of 3-D Heat Sinks in Power ICs

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4226-4232

2017

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Direct anterior approach and dual mobility cup: the “head-first” reduction technique: a technical note and early case series

Musculoskeletal surgery, 2021-08, Vol.105 (2), p.201-206

2021

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Production of a thin diamond target by laser for HESR at FAIR

Journal of physics. Conference series, 2016-04, Vol.713 (1), p.12003, Article 012003

2016

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Silicon resonant microcantilevers for absolute pressure measurement

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-07, Vol.24 (4), p.1803-1809

2006

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4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts

Materials science forum, 2009-03, Vol.615-617, p.647-650

2009

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Production of a thin diamond target by LASER for nuclear reactions inside storage rings

Journal of radioanalytical and nuclear chemistry, 2015-09, Vol.305 (3), p.737-742

2015

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Fabrication of Ni/Ti/Al Schottky contact to n-type 4H-SiC under various annealing conditions

Journal of physics. Conference series, 2013-01, Vol.439 (1), p.12027-4

2013

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Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.227-230

2010

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Influence of inhomogeneous contact in electrical properties of 4H–SiC based Schottky diode

Solid-state electronics, 2008-08, Vol.52 (8), p.1232-1236

2008

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Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes

Microelectronic engineering, 2006, Vol.83 (1), p.86-88

2006

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The nuclear matrix elements of 0 νββ decay and the NUMEN project at INFN-LNS

EPJ Web of Conferences, 2016, Vol.117, p.10003

2016

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High-Throughput Characterization of Microcantilever Resonator Arrays for Low-Concentration Detection of Small Molecules

Journal of microelectromechanical systems, 2017-02, Vol.26 (1), p.246-254

2017

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Defect characterization of 4H-SiC wafers for power electronic device applications

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13397-13402

2002

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Study of the Electrical Characteristics of the CNT/SiC Interface

Materials science forum, 2009-01, Vol.615-617, p.231-234

2009

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Plasma-assisted SiC oxidation for power device fabrication

Applied surface science, 2004-11, Vol.238 (1-4), p.336-340

2004

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Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.298-303

2003

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Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applications

Thin solid films, 2003-03, Vol.427 (1-2), p.142-146

2003

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Direct anterior approach and dual mobility cup: the "head-first" reduction technique: a technical note and early case series

Musculoskeletal surgery, 2020-01

2020

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Fabrication of quartz diaphragms for helium leak detection

Vacuum, 2006-01, Vol.80 (5), p.432-437

2006

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Silicon microcantilevers with different actuation-readout schemes for absolute pressure measurement

Journal of physics. Conference series, 2008-03, Vol.100 (9), p.092008

2008

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In situ etch treatments of silicon carbide epitaxial layer for morphological quality improvement of the surfaces

Physica status solidi. A, Applications and materials science, 2006-07, Vol.203 (9), p.2294-2297

2006

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Inkjet printing and low power laser annealing of silver nanoparticle traces for the realization of low resistivity lines for flexible electronics

A passive two-way microfluidic device for low volume blood-plasma separation

Optimization of a suspended two photon polymerized microfluidic filtration system

Micro-structured rough surfaces by laser etching for heat transfer enhancement on flush mounted heat sinks

Wafer Level Integration of 3-D Heat Sinks in Power ICs

Direct anterior approach and dual mobility cup: the “head-first” reduction technique: a technical note and early case series

Production of a thin diamond target by laser for HESR at FAIR

Silicon resonant microcantilevers for absolute pressure measurement

4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts

Production of a thin diamond target by LASER for nuclear reactions inside storage rings

Fabrication of Ni/Ti/Al Schottky contact to n-type 4H-SiC under various annealing conditions

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

Influence of inhomogeneous contact in electrical properties of 4H–SiC based Schottky diode

Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes

The nuclear matrix elements of 0 νββ decay and the NUMEN project at INFN-LNS

High-Throughput Characterization of Microcantilever Resonator Arrays for Low-Concentration Detection of Small Molecules

Defect characterization of 4H-SiC wafers for power electronic device applications

Study of the Electrical Characteristics of the CNT/SiC Interface

Plasma-assisted SiC oxidation for power device fabrication

Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications

Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applications

Direct anterior approach and dual mobility cup: the "head-first" reduction technique: a technical note and early case series

Fabrication of quartz diaphragms for helium leak detection

Silicon microcantilevers with different actuation-readout schemes for absolute pressure measurement

In situ etch treatments of silicon carbide epitaxial layer for morphological quality improvement of the surfaces

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