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Spintronics based random access memory: a review

Materials today (Kidlington, England), 2017-11, Vol.20 (9), p.530-548

2017

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Stabilizing magnetic skyrmions in constricted nanowires

Scientific reports, 2022-06, Vol.12 (1), p.10141-10141, Article 10141

2022

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Domain wall memory: Physics, materials, and devices

Physics reports, 2022-05, Vol.958, p.1-35

2022

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Recent Developments in Spin Transfer Torque MRAM

Physica status solidi. PSS-RRL. Rapid research letters, 2017-12, Vol.11 (12), p.n/a

2017

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Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Physica status solidi. PSS-RRL. Rapid research letters, 2021-07, Vol.15 (7), p.n/a

Sbiaa, Rachid

2021

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Magnetization reorientation in antiferromagnetically coupled Co films and (Co/Pd) multilayers

Applied physics letters, 2009-12, Vol.95 (24)

2009

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Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer

Applied physics letters, 2009-02, Vol.94 (6), p.062516-062516-3

2009

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Multi-bit per cell magnetic random access memory based on spin torque oscillator

AIP conference proceedings, 2017, Vol.1885 (1)

2017

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Antiferromagnetic iridium manganese based intermediate layers for perpendicular magnetic recording media

Applied physics letters, 2008-08, Vol.93 (7)

2008

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Spin torque oscillator for high performance magnetic memory

Sultan Qaboos University Journal for Science., 2015-06, Vol.20 (1), p.77-82

2015

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Chirality‐Dependent Dynamics and Pinning of Transverse Domain Wall in Constricted Nanowires

Physica status solidi. A, Applications and materials science, 2024-05, Vol.221 (10)

2024

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Magnetization switching by spin-torque effect in off-aligned structure with perpendicular anisotropy

Journal of physics. D, Applied physics, 2013-10, Vol.46 (39), p.395001-1-4

Sbiaa, Rachid

2013

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Antiferromagnetically Coupled Patterned Media and Control of Switching Field Distribution

IEEE transactions on magnetics, 2010-06, Vol.46 (6), p.1787-1790

2010

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Patterned media towards Nano-bit magnetic recording: fabrication and challenges

Recent patents on nanotechnology, 2007-02, Vol.1 (1), p.29-40

2007

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Perspectives for 10 terabits/in2 magnetic recording

Journal of nanoscience and nanotechnology, 2011-03, Vol.11 (3), p.2704-2709

2011

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Control of Skyrmions in Confined Devices for Multistate Memory Application

Physica status solidi. A, Applications and materials science, 2024-09

2024

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Spin transfer torque induced domain wall oscillations in ferromagnetic nanowire with a nanoscale Dzyaloshinskii–Moriya interaction region

Journal of magnetism and magnetic materials, 2020-08, Vol.507, p.166807, Article 166807

2020

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Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing

ACS nano, 2023-04, Vol.17 (7), p.6261-6274

2023

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Focus on Spintronics and Spin Physics

Physica status solidi. PSS-RRL. Rapid research letters, 2011-12, Vol.5 (12), p.A117-A118

2011

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Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

Physica status solidi. A, Applications and materials science, 2020-08, Vol.217 (16), p.n/a

2020

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Size Dependence Effect in MgO-Based CoFeB Tunnel Junctions with Perpendicular Magnetic Anisotropy

Japanese Journal of Applied Physics, 2012-01, Vol.51 (1R), p.13101

2012

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Domain Wall Motion Control for Racetrack Memory Applications

IEEE transactions on magnetics, 2019-03, Vol.55 (3), p.1-8

2019

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Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory

Physica status solidi. PSS-RRL. Rapid research letters, 2018-10, Vol.12 (10), p.n/a

2018

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Effects of Ta seed layer and annealing on magnetoresistance in CoFe∕Pd-based pseudo-spin-valves with perpendicular anisotropy

Applied physics letters, 2007-12, Vol.91 (24)

2007

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Magnetization dynamics in a perpendicular anisotropy free layer under a spin torque effect with crossed polarization

Sultan Qaboos University Journal for Science., 2020-06, Vol.25 (1), p.54-60

2020

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Spintronics based random access memory: a review

Stabilizing magnetic skyrmions in constricted nanowires

Domain wall memory: Physics, materials, and devices

Recent Developments in Spin Transfer Torque MRAM

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Magnetization reorientation in antiferromagnetically coupled Co films and (Co/Pd) multilayers

Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer

Multi-bit per cell magnetic random access memory based on spin torque oscillator

Antiferromagnetic iridium manganese based intermediate layers for perpendicular magnetic recording media

Spin torque oscillator for high performance magnetic memory

Chirality‐Dependent Dynamics and Pinning of Transverse Domain Wall in Constricted Nanowires

Magnetization switching by spin-torque effect in off-aligned structure with perpendicular anisotropy

Antiferromagnetically Coupled Patterned Media and Control of Switching Field Distribution

Patterned media towards Nano-bit magnetic recording: fabrication and challenges

Perspectives for 10 terabits/in2 magnetic recording

Control of Skyrmions in Confined Devices for Multistate Memory Application

Spin transfer torque induced domain wall oscillations in ferromagnetic nanowire with a nanoscale Dzyaloshinskii–Moriya interaction region

Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing

Focus on Spintronics and Spin Physics

Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

Size Dependence Effect in MgO-Based CoFeB Tunnel Junctions with Perpendicular Magnetic Anisotropy

Domain Wall Motion Control for Racetrack Memory Applications

Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory

Effects of Ta seed layer and annealing on magnetoresistance in CoFe∕Pd-based pseudo-spin-valves with perpendicular anisotropy

Magnetization dynamics in a perpendicular anisotropy free layer under a spin torque effect with crossed polarization

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