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Polarization-enhanced Mg doping of AlGaN/GaN superlattices

Applied physics letters, 1999-10, Vol.75 (16), p.2444-2446

1999

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Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor

Journal of applied physics, 1999-07, Vol.86 (1), p.94-99

1999

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Applications of SiC MESFETs and GaN HEMTs in power amplifier design

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2002, Vol.3, p.1819-1822 vol.3

2002

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Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells

Applied physics letters, 1999-04, Vol.74 (15), p.2167-2169

1999

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Identification of the Γ5 and Γ6 free excitons in GaN

Applied physics letters, 2000-10, Vol.77 (18), p.2879-2881

2000

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Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

Journal of crystal growth, 2001-07, Vol.227-228, p.458-465

2001

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Analysis of Cr-doped CdGeAs2 using thermal admittance spectroscopy

Materials Research Society Symposia Proceedings, 2000, p.465-470

2000

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Optical investigation of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5

Journal of crystal growth, 2001, Vol.227-28, p.458-465

2001

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Analysis of Cr-Doped CdGeAs2 Using Thermal Admittance Spectroscopy

MRS proceedings, 1999, Vol.607

1999

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Analysis of Cr-Doped CdGeAs 2 Using Thermal Admittance Spectroscopy

MRS proceedings, 1999, Vol.607, Article 465

1999

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Generation and Properties of Semi-Insulating SiC Substrates

Materials science forum, 2000-05, Vol.338-342, p.17-20

2000

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Wide bandgap semiconductor devices and MMICs for RF power applications

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.17.4.1-17.4.4

2001

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Lack of toxicological side-effects in silver-coated megaprostheses in humans

Biomaterials, 2007, Vol.28 (18), p.2869-2875

2007

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Heavy doping effects in Mg-doped GaN

Journal of applied physics, 2000-02, Vol.87 (4), p.1832-1835

2000

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Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide

Journal of applied physics, 2000-06, Vol.87 (12), p.8773-8777

2000

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Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC

Applied physics letters, 2007-01, Vol.90 (4)

2007

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Fermi level control and deep levels in semi-insulating 4H–SiC

Journal of applied physics, 1999-11, Vol.86 (9), p.5040-5044

1999

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Aluminum gallium nitride short-period superlattices doped with magnesium

Applied physics letters, 1999-04, Vol.74 (14), p.2023-2025

1999

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Characterization of an AlGaN/GaN two-dimensional electron gas structure

Journal of applied physics, 2000-01, Vol.87 (1), p.369-374

2000

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High mobility in n -type GaN substrates

Applied physics letters, 2001-03, Vol.78 (13), p.1873-1875

2001

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Comparison of trimethylgallium and triethylgallium for the growth of GaN

Applied physics letters, 1997-12, Vol.71 (22), p.3272-3274

1997

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Study of the effects of an AlN interlayer on the transport propertiesof Al Ga N ∕ Al N ∕ Ga N heterostructures grown on SiC

Applied physics letters, 2007-01, Vol.90 (4), p.042112-042112-3

2007

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Electronic properties of heteroepitaxial undoped and n -InSb epilayers using SnTe source by molecular beam epitaxy

Journal of applied physics, 2002-07, Vol.92 (1), p.296-301

2002

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Characterization of deep centers in bulk n-type 4H–SiC

Physica. B, Condensed matter, 2001-12, Vol.308, p.706-709

2001

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Vanadium-free Semi-insulating 4H-SiC Substrates

Materials science forum, 2000-05, Vol.338-342, p.21-24

2000

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Polarization-enhanced Mg doping of AlGaN/GaN superlattices

Infrared properties of AgGaTe2, a nonlinear optical chalcopyrite semiconductor

Applications of SiC MESFETs and GaN HEMTs in power amplifier design

Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells

Identification of the Γ5 and Γ6 free excitons in GaN

Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

Analysis of Cr-doped CdGeAs2 using thermal admittance spectroscopy

Optical investigation of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5

Analysis of Cr-Doped CdGeAs2 Using Thermal Admittance Spectroscopy

Analysis of Cr-Doped CdGeAs 2 Using Thermal Admittance Spectroscopy

Generation and Properties of Semi-Insulating SiC Substrates

Wide bandgap semiconductor devices and MMICs for RF power applications

Lack of toxicological side-effects in silver-coated megaprostheses in humans

Heavy doping effects in Mg-doped GaN

Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide

Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC

Fermi level control and deep levels in semi-insulating 4H–SiC

Aluminum gallium nitride short-period superlattices doped with magnesium

Characterization of an AlGaN/GaN two-dimensional electron gas structure

High mobility in n -type GaN substrates

Comparison of trimethylgallium and triethylgallium for the growth of GaN

Study of the effects of an AlN interlayer on the transport propertiesof Al Ga N ∕ Al N ∕ Ga N heterostructures grown on SiC

Electronic properties of heteroepitaxial undoped and n -InSb epilayers using SnTe source by molecular beam epitaxy

Characterization of deep centers in bulk n-type 4H–SiC

Vanadium-free Semi-insulating 4H-SiC Substrates

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