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Resistive switching in transition metal oxides

Materials today (Kidlington, England), 2008-06, Vol.11 (6), p.28-36

Sawa, Akihito

2008

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Ferroelectricity and pseudo-coherent growth in HfO2/SrHfO3 nanolaminates

Journal of applied physics, 2023-03, Vol.133 (9)

2023

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Polarized Raman scattering of epitaxial vanadium dioxide films with low-temperature monoclinic phase

Journal of applied physics, 2017-07, Vol.122 (1)

2017

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Growth and ferroelectric properties of yttrium-doped hafnium oxide/indium-tin oxide polycrystalline heterostructures with sharp and uniform interfaces

Journal of applied physics, 2018-09, Vol.124 (10)

2018

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Epitaxial growth and polarized Raman scattering of niobium dioxide films

AIP advances, 2022-05, Vol.12 (5), p.055103-055103-7

2022

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Modulation of Metal-Insulator Transition in VO2 by Electrolyte Gating-Induced Protonation

Advanced electronic materials, 2016-02, Vol.2 (2), p.n/a

2016

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Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Silicon waveguide optical modulator driven by metal–insulator transition of vanadium dioxide cladding layer

Optics express, 2019-02, Vol.27 (4), p.4147

2019

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Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

AIP advances, 2015-10, Vol.5 (10), p.107118-107118-10

2015

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Resistive switching artificially induced in a dielectric/ferroelectric composite diode

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Switching dynamics of silicon waveguide optical modulator driven by photothermally induced metal-insulator transition of vanadium dioxide cladding layer

Optics express, 2020-12, Vol.28 (25), p.37188-37198

2020

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Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments

Japanese Journal of Applied Physics, 2019-03, Vol.58 (SB)

2019

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Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates

Applied physics letters, 2013-07, Vol.103 (2)

2013

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High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates

Journal of applied physics, 2015-08, Vol.118 (5)

2015

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Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

Advanced functional materials, 2015-05, Vol.25 (18), p.2708-2714

2015

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Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature

Applied physics letters, 2014-03, Vol.104 (9)

2014

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Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Advanced materials (Weinheim), 2011-12, Vol.23 (48), p.5822-5827

2011

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Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

AIP advances, 2016-05, Vol.6 (5), p.055012-055012-7

2016

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Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

Advanced materials (Weinheim), 2013-04, Vol.25 (15), p.2158-2161

2013

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Field-Modulation Imaging of Ferroelectric Domains in Molecular Single-Crystal Films

Physical review applied, 2019-01, Vol.11 (1), Article 014046

2019

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Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p‐Type Schottky‐Like Pt/Bi 1–δ FeO 3 Interfaces

Advanced functional materials, 2012-03, Vol.22 (5), p.1040-1047

2012

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Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

MRS proceedings, 2012, Vol.1430 (1), p.31-36

2012

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Silicon waveguide optical modulator driven by metal-insulator transition of vanadium dioxide cladding layer

Optics express, 2019-02, Vol.27 (4), p.4147-4156

2019

Volltextzugriff (PDF)

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Resistive switching in transition metal oxides

Ferroelectricity and pseudo-coherent growth in HfO2/SrHfO3 nanolaminates

Polarized Raman scattering of epitaxial vanadium dioxide films with low-temperature monoclinic phase

Growth and ferroelectric properties of yttrium-doped hafnium oxide/indium-tin oxide polycrystalline heterostructures with sharp and uniform interfaces

Epitaxial growth and polarized Raman scattering of niobium dioxide films

Modulation of Metal-Insulator Transition in VO2 by Electrolyte Gating-Induced Protonation

Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics

Silicon waveguide optical modulator driven by metal–insulator transition of vanadium dioxide cladding layer

Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

Resistive switching artificially induced in a dielectric/ferroelectric composite diode

Switching dynamics of silicon waveguide optical modulator driven by photothermally induced metal-insulator transition of vanadium dioxide cladding layer

Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments

Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates

High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates

Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

Ca doping dependence of resistive switching characteristics in ferroelectric capacitors comprising Ca-doped BiFeO3

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature

Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

Field-Modulation Imaging of Ferroelectric Domains in Molecular Single-Crystal Films

Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p‐Type Schottky‐Like Pt/Bi 1–δ FeO 3 Interfaces

Resistive Switching Memory Based on Ferroelectric Polarization Reversal at Schottky-like BiFeO3 Interfaces

Silicon waveguide optical modulator driven by metal-insulator transition of vanadium dioxide cladding layer

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