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Mathematical simulation of operating fluid unsteady flow in a pulsed aerodynamic wind tunnel: Testing and correction of the calculation methodology

AIP Conference Proceedings, 2021, Vol.2351 (1)

2021

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Experimental study of the control agent flow parameters in the channel, simulating the ramjet air flow duct

Journal of physics. Conference series, 2019-11, Vol.1382 (1), p.12090

2019

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Effect of neutron irradiation on current-voltage characteristics of packaged diodes based on 6H-SiC pn structures

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 459

2017

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Doping of n -type 6H–SiC and 4H–SiC with defects created with a proton beam

Journal of applied physics, 2000-12, Vol.88 (11), p.6265-6271

2000

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Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

Applied surface science, 2001-12, Vol.184 (1), p.419-424

2001

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NUMERICAL INVESTIGATION OF AERODYNAMIC CHARACTERISTICS OF TWO DIFFERENT COMPONENT BODIES AT VARIOUS ANGLES OF ATTACK

Vestnik Tomskogo gosudarstvennogo universiteta. Matematika i mekhanika, 2020-04 (64), p.136-145

2020

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Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

Materials science forum, 2007-01, Vol.556-557, p.427-430

2007

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DLTS study of defects in 6H- and 4H-SiC created by proton irradiation

Physica. B, Condensed matter, 2001-12, Vol.308, p.641-644

2001

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AN INTEGRATED APPROACH TO SOLVING THE PROBLEM OF HIGH-SPEED FLOW AROUND A BODY IN A PULSED AERODYNAMIC FACILITY, AND VALIDATION OF THE OBTAINED RESULTS

Vestnik Tomskogo gosudarstvennogo universiteta. Matematika i mekhanika, 2019-06 (59), p.118-129

2019

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Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.321-324

2002

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High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Materials science forum, 2004-01, Vol.457-460, p.1057-1060

2004

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Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.317-320

2002

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Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum

Materials science forum, 2004-01, Vol.457-460, p.249-252

2004

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Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

Materials science forum, 2003-09, Vol.433-436, p.427-430

2003

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Specificity of Electron Impact Ionization in Superstructure Silicon Carbide

Materials science forum, 2004-01, Vol.457-460, p.661-664

2004

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Ideal 4H-SiC pn junction and its characteristic shunt

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.378-382

2001

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Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization

Materials Science Forum, 2005-05, Vol.483-485, p.261-264

2005

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Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Materials science forum, 2004-01, Vol.457-460, p.1133-1136

2004

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Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Materials science forum, 2003-09, Vol.433-436, p.293-296

2003

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X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Materials science forum, 2004-01, Vol.457-460, p.363-366

2004

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Detection of strongly and weakly ionizing radiation by triode structure based on SiC films

Journal of applied physics, 2003-05, Vol.93 (9), p.5714-5719

2003

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Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers

Materials science forum, 2003-09, Vol.433-436, p.189-192

2003

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Radiation hardness of SiC based ions detectors for influence of the relative protons

Applied surface science, 2001-12, Vol.184 (1), p.431-436

2001

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Electrical characteristics modeling of large area boron: compensated 6H-SiC pn structures

Solid-state electronics, 2000-04, Vol.44 (4), p.571-579

2000

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Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

Technical physics letters, 2002-11, Vol.28 (11), p.935-938

2002

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Mathematical simulation of operating fluid unsteady flow in a pulsed aerodynamic wind tunnel: Testing and correction of the calculation methodology

Experimental study of the control agent flow parameters in the channel, simulating the ramjet air flow duct

Effect of neutron irradiation on current-voltage characteristics of packaged diodes based on 6H-SiC pn structures

Doping of n -type 6H–SiC and 4H–SiC with defects created with a proton beam

Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates

NUMERICAL INVESTIGATION OF AERODYNAMIC CHARACTERISTICS OF TWO DIFFERENT COMPONENT BODIES AT VARIOUS ANGLES OF ATTACK

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

DLTS study of defects in 6H- and 4H-SiC created by proton irradiation

AN INTEGRATED APPROACH TO SOLVING THE PROBLEM OF HIGH-SPEED FLOW AROUND A BODY IN A PULSED AERODYNAMIC FACILITY, AND VALIDATION OF THE OBTAINED RESULTS

Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

Specificity of Electron Impact Ionization in Superstructure Silicon Carbide

Ideal 4H-SiC pn junction and its characteristic shunt

Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Detection of strongly and weakly ionizing radiation by triode structure based on SiC films

Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers

Radiation hardness of SiC based ions detectors for influence of the relative protons

Electrical characteristics modeling of large area boron: compensated 6H-SiC pn structures

Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

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