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Development of a real-time wheel/rail contact model in NUCARS® 1 and application to diamond crossing and turnout design simulations

Vehicle System Dynamics, 2006-01, Vol.44 (sup1), p.251-260

2006

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High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

Journal of crystal growth, 1998-06, Vol.189-190, p.61-66

1998

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Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layer

Physica status solidi. A, Applications and materials science, 2007-06, Vol.204 (6), p.2094-2097

2007

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Over 1000 mW single mode operation of planar inner stripe blue-violet laser diodes

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1824-1828

2006

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Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD)

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.329-334

2002

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Reflectance spectroscopy on GaN films under uniaxial stress

Applied physics letters, 1997-07, Vol.71 (3), p.374-376

1997

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Blockade of bulky lymphoma‐associated CD55 expression by RNA interference overcomes resistance to complement‐dependent cytotoxicity with rituximab

Cancer science, 2006-01, Vol.97 (1), p.72-79

2006

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Self-limiting adsorption of thermally cracked SiCl2H2 on Si surfaces

Applied surface science, 1994-12, Vol.82-83 (1-4), p.348-353

1994

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Anomalous As desorption from InAs(100) 2×4

Applied physics letters, 1993-05, Vol.62 (19), p.2338-2340

1993

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Aluminum selective area deposition on Si using diethylaluminumchloride

Applied physics letters, 1989-08, Vol.55 (8), p.741-743

1989

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Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.35-38

1999

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Temperature programmed desorption study of GaAs(100)-c(4x4) and As4 exposed (2x4) surfaces

Surface science, 1992-04, Vol.265 (1-3), p.L239-L244

1992

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Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy

MRS proceedings, 1997, Vol.482, Article 119

1997

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Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Journal of crystal growth, 1998-06, Vol.189-190, p.551-555

1998

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Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Japanese Journal of Applied Physics, 1999, Vol.38 (2B), p.L184

1999

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Temperature programmed desorption study of gallium chloride adsorbed on GaAs surfaces

Journal of crystal growth, 1991-12, Vol.115 (1), p.94-98

1991

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Growth induced compositional non-uniformity in (Ga,Al)As and thermodynamical analysis

Journal of crystal growth, 1989-11, Vol.98 (1), p.98-107

1989

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In situ x-ray photoelectron spectroscopy and reflection high-energy electron diffraction study of diethylgalliumchloride adsorption on Si(100) and Si(111) surfaces

Applied physics letters, 1990-10, Vol.57 (17), p.1733-1735

1990

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Shape of atomic steps and interface supersaturation between LPE macrosteps

Journal of crystal growth, 1986-12, Vol.79 (1), p.806-810

1986

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Self-limiting adsorption of thermally cracked SiCl 2H 2 on Si surfaces

Applied surface science, 1994, Vol.82, p.348-353

1994

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Planar Inner Stripe Blue-violet Laser Diodes with Buried AlN Confinement Layer

2005 Pacific Rim Conference on Lasers & Electro-Optics, 2005, p.348-349

Sasaoka, C.

2005

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Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates

Japanese Journal of Applied Physics, 2001-01, Vol.40 (9A), p.L925-L927

2001

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Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance

Physical review. B, Condensed matter and materials physics, 2004-01, Vol.69 (4), Article 045207

2004

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Theoretical study of the Cl desorption reaction induced by H2 in the chloride atomic layer epitaxy

Journal of crystal growth, 1994, Vol.135 (1-2), p.259-268

1994

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Temperature programmed desorption study of GaAs(100)−c(4×4) and As 4 exposed (2×4) surfaces

Surface science, 1992, Vol.265 (1), p.L239-L244

1992

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Development of a real-time wheel/rail contact model in NUCARS® 1 and application to diamond crossing and turnout design simulations

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

Highly reliable blue-violet inner stripe laser diodes using planar regrowth of AlGaN/GaN superlattice cladding layer

Over 1000 mW single mode operation of planar inner stripe blue-violet laser diodes

Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD)

Reflectance spectroscopy on GaN films under uniaxial stress

Blockade of bulky lymphoma‐associated CD55 expression by RNA interference overcomes resistance to complement‐dependent cytotoxicity with rituximab

Self-limiting adsorption of thermally cracked SiCl2H2 on Si surfaces

Anomalous As desorption from InAs(100) 2×4

Aluminum selective area deposition on Si using diethylaluminumchloride

Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Temperature programmed desorption study of GaAs(100)-c(4x4) and As4 exposed (2x4) surfaces

Wide Gan Stripes by Lateral Growth in Metalorganic Vapor Phase Epitaxy

Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Temperature programmed desorption study of gallium chloride adsorbed on GaAs surfaces

Growth induced compositional non-uniformity in (Ga,Al)As and thermodynamical analysis

In situ x-ray photoelectron spectroscopy and reflection high-energy electron diffraction study of diethylgalliumchloride adsorption on Si(100) and Si(111) surfaces

Shape of atomic steps and interface supersaturation between LPE macrosteps

Self-limiting adsorption of thermally cracked SiCl 2H 2 on Si surfaces

Planar Inner Stripe Blue-violet Laser Diodes with Buried AlN Confinement Layer

Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates

Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance

Theoretical study of the Cl desorption reaction induced by H2 in the chloride atomic layer epitaxy

Temperature programmed desorption study of GaAs(100)−c(4×4) and As 4 exposed (2×4) surfaces

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