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Growth and Characteristics of C8‐BTBT Layer on C‐Sapphire Substrate by Thermal Evaporation

Physica status solidi. A, Applications and materials science, 2018-06, Vol.215 (11), p.n/a

2018

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Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power

Materials transactions, 2010-05, Vol.51 (5), p.878-881

2010

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Room Temperature Thermoelectric Properties of Epitaxially Grown Si-Ge Thin Films on SOI Substrates

Materials transactions, 2010-04, Vol.51 (4), p.767-770

2010

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Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping

Materials transactions, 2008-08, Vol.49 (8), p.1723-1727

2008

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Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth

Japanese Journal of Applied Physics, 1998-02, Vol.37 (2R), p.402

1998

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Preferred orientation of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene molecules on inorganic single-crystal substrates with various orientations

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8S3), p.8

2018

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Unbalanced Magnetron Sputtering Using Cylindrical Target for Low-Temperature Optical Coating

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1S), p.669

2005

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Growth Dependence of Reactively Sputtered Yttria-Stabilized Zirconia on Si(100), (110), (111) Substrates

Japanese Journal of Applied Physics, 1999-01, Vol.38 (1A), p.L74

1999

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Anomalous Large Thermoelectric Power on Heavily B-Doped SiGe Thin Films with Thermal Annealing

Japanese Journal of Applied Physics, 2002-08, Vol.41 (Part 2, No. 8B), p.L949-L951

2002

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Electrical Properties of Low-Temperature (450°C) Pb(Zr,Ti)O 3 Films Prepared in Quasi-Metallic Mode by RF Reactive Sputtering

Japanese Journal of Applied Physics, 1996-09, Vol.35 (9S), p.5084

1996

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Low-Temperature Fabrication of Pb(Zr,Ti)O 3 Films by RF Reactive Sputtering Using Zr/Ti + PbO Target

Japanese Journal of Applied Physics, 1995-09, Vol.34 (9S), p.5120

1995

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Target for a Pb(Zr,Ti)O 3 Thin Film Deposited at a Low Temperature Using a Quasi-Metallic Mode of Reactive Sputtering

Japanese Journal of Applied Physics, 1999-12, Vol.38 (12R), p.6882

1999

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Epitaxial growth of SiGe thin films by ion-beam sputtering

Applied surface science, 1997-04, Vol.113, p.43-47

1997

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Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy

Thin solid films, 2001-09, Vol.395 (1-2), p.225-229

Sasaki, Kimihiro

2001

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Direct invasion to the colon by hepatocellular carcinoma： Report of two cases

World journal of gastroenterology : WJG, 2008-07, Vol.14 (28), p.4583-4585

2008

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Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO 2 Substrates

Japanese Journal of Applied Physics, 2009-06, Vol.48 (6R), p.61201

2009

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Analysis of Sputter Process on a New ZrTi+PbO Target System and Its Application to Low-Temperature Deposition of Ferroelectric Pb(Zr,Ti)O 3 Films

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3R), p.1868

1996

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Evaluation of optical absorption coefficient of Si by photothermal spectroscopy using transparent pyroelectric transducer

Japanese Journal of Applied Physics, 1995-05, Vol.34 (5B), p.2911-2916

1995

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Electrical properties of low-temperature (450°C) Pb(Zr,Ti)O3 films prepared in quasi-metallic mode by RF reactive sputtering

Japanese journal of applied physics, 1996-09, Vol.35 (9B), p.5084-5088

1996

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Ozone in reactive gas for producing tin-doped indium oxide films by DC reactive magnetron sputtering

Thin solid films, 1996-08, Vol.281, p.209-212

1996

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Crystallinity and strain control growth of SiGe using ion sputtering technique

Thin solid films, 2006-06, Vol.508 (1), p.124-127

2006

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Analysis of sputter process on a new ZrTi+PbO target system and its application to low-temperature deposition of ferroelectric Pb(Zr,Ti)O3 films

Japanese journal of applied physics, 1996, Vol.35 (3), p.1868-1872

1996

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Investigation of oxygen source from vapor phase and target for growth of Pb(Zr,Ti)O3 thin film

Electronics & communications in Japan. Part 2, Electronics, 2003-03, Vol.86 (3), p.28-34

2003

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Improved Dielectric Properties of Tetragonal ZrO 2 Gate Dielectric Fabricated by Ozone-Assisted Sputtering

Japanese Journal of Applied Physics, 2009-06, Vol.48 (6R), p.60208

2009

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Low-temperature fabrication (450°C) and evaluation of Pb(Zr, Ti)O3 thin films by reactive sputtering using (ZrTi + PbO) target

Integrated ferroelectrics, 1996-10, Vol.12 (2-4), p.151-160

1996

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Growth and Characteristics of C8‐BTBT Layer on C‐Sapphire Substrate by Thermal Evaporation

Structural Properties of Heavily B-Doped SiGe Thin Films for High Thermoelectric Power

Room Temperature Thermoelectric Properties of Epitaxially Grown Si-Ge Thin Films on SOI Substrates

Investigation of Thermoelectric Properties of Si/Ge Multilayer with Ultra-Heavily B Doping

Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth

Preferred orientation of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene molecules on inorganic single-crystal substrates with various orientations

Unbalanced Magnetron Sputtering Using Cylindrical Target for Low-Temperature Optical Coating

Growth Dependence of Reactively Sputtered Yttria-Stabilized Zirconia on Si(100), (110), (111) Substrates

Anomalous Large Thermoelectric Power on Heavily B-Doped SiGe Thin Films with Thermal Annealing

Electrical Properties of Low-Temperature (450°C) Pb(Zr,Ti)O 3 Films Prepared in Quasi-Metallic Mode by RF Reactive Sputtering

Low-Temperature Fabrication of Pb(Zr,Ti)O 3 Films by RF Reactive Sputtering Using Zr/Ti + PbO Target

Target for a Pb(Zr,Ti)O 3 Thin Film Deposited at a Low Temperature Using a Quasi-Metallic Mode of Reactive Sputtering

Epitaxial growth of SiGe thin films by ion-beam sputtering

Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy

Direct invasion to the colon by hepatocellular carcinoma： Report of two cases

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO 2 Substrates

Analysis of Sputter Process on a New ZrTi+PbO Target System and Its Application to Low-Temperature Deposition of Ferroelectric Pb(Zr,Ti)O 3 Films

Evaluation of optical absorption coefficient of Si by photothermal spectroscopy using transparent pyroelectric transducer

Electrical properties of low-temperature (450°C) Pb(Zr,Ti)O3 films prepared in quasi-metallic mode by RF reactive sputtering

Ozone in reactive gas for producing tin-doped indium oxide films by DC reactive magnetron sputtering

Crystallinity and strain control growth of SiGe using ion sputtering technique

Analysis of sputter process on a new ZrTi+PbO target system and its application to low-temperature deposition of ferroelectric Pb(Zr,Ti)O3 films

Investigation of oxygen source from vapor phase and target for growth of Pb(Zr,Ti)O3 thin film

Improved Dielectric Properties of Tetragonal ZrO 2 Gate Dielectric Fabricated by Ozone-Assisted Sputtering

Low-temperature fabrication (450°C) and evaluation of Pb(Zr, Ti)O3 thin films by reactive sputtering using (ZrTi + PbO) target

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