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Field-Induced Commensurate-Incommensurate Phase Transition in a Dzyaloshinskii-Moriya Spiral Antiferromagnet

Physical review letters, 1997-06, Vol.78 (25), p.4857-4860

1997

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Magnetic-field-induced condensation of triplons in han purple pigment BaCuSi2O6

Physical review letters, 2004-08, Vol.93 (8), p.087203.1-087203.4

2004

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Random Telegraph Signal in Flash Memory: Its Impact on Scaling of Multilevel Flash Memory Beyond the 90-nm Node

IEEE journal of solid-state circuits, 2007-06, Vol.42 (6), p.1362-1369

2007

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Spin-Vacancy-Induced Long-Range Order in a New Haldane-Gap Antiferromagnet

Physical review letters, 1999-07, Vol.83 (3), p.632-635

1999

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2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T92-T93

2015

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Effects of substitution of Zn for Cu in the spin-Peierls cuprate, CuGeO3 : the suppression of the spin-Peierls transition and the occurrence of a new spin-glass state

Physical review letters, 1993-12, Vol.71 (24), p.4059-4062

1993

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Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories

IEEE journal of solid-state circuits, 2005-02, Vol.40 (2), p.523-531

2005

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Spin-triplet excitons and anisotropy effects in the S = 1 2 gapped antiferromagnet BaCuSi2O6

Journal of magnetism and magnetic materials, 2007, Vol.310 (2), p.1206-1208

2007

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Spin-triplet excitons and anisotropy effects in the gapped antiferromagnet BaCuSi2O6

Journal of magnetism and magnetic materials, 2007-03, Vol.310 (2), p.1206-1208

2007

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Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes

2012 Symposium on VLSI Technology (VLSIT), 2012, p.35-36

2012

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Phase diagram of spin-vacancy-induced antiferromagnetism in a new Haldane compound PbNi2V2O8

Physica. B, Condensed matter, 2000-07, Vol.284-288, p.1641-1642

2000

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Negative-source enhanced source-side injection achieving 100-ns cell programming in multilevel flash memories

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.206-207

2005

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Doping effects on the folded phonon mode in the spin-Peierls systems CuGeO3 and α′-NaV2O5

Journal of magnetism and magnetic materials, 1998-01, Vol.177-181, p.679-680

1998

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The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories

2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers, 2006, p.112-113

2006

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Spiral order in Ba2CuGe2O7

Physica. B, Condensed matter, 1997-06, Vol.234-236, p.546-548

1997

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Effect of substitution on magnetic properties of CuGeO3

Journal of magnetism and magnetic materials, 1995-02, Vol.140-144, p.1691-1692

1995

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Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.96-97

2011

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Spin-triplet excitons and anisotropy effects in the S = 1 2 gapped antiferromagnet BaCuSi 2O 6

Journal of magnetism and magnetic materials, 2007, Vol.310 (2), p.1206-1208

2007

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Raman-scattering study of CuGeO3

Physica. B, Condensed matter, 1996-04, Vol.219-220, p.104-106

1996

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Magnetization of pure and Zn-doped spin-Peierls cuprate CuGeO3 in high magnetic field

Physica. B, Condensed matter, 1994-07, Vol.201, p.167-170

1994

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Antiferromagnetic long-range order caused by nonmagnetic impurities; magnetization of single-crystal Cu1−xZnxGeO3

Physica. B, Condensed matter, 1995-10, Vol.215 (2-3), p.164-170

1995

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Spin-Peierls transition in a cuprate CuGeO3

Physica. B, Condensed matter, 1994-02, Vol.194-196, p.269-270

1994

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Far-infrared ESR study of cuprate compounds

Physica. B, Condensed matter, 1994-07, Vol.201, p.174-177

1994

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Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories

IEICE transactions on electronics, 2007-04, Vol.E90-C (4), p.772-778

2007

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Structural properties of a low-dimensional magnet CuGeO3

Synthetic metals, 1995-04, Vol.71 (1-3), p.1811-1812

1995

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Field-Induced Commensurate-Incommensurate Phase Transition in a Dzyaloshinskii-Moriya Spiral Antiferromagnet

Magnetic-field-induced condensation of triplons in han purple pigment BaCuSi2O6

Random Telegraph Signal in Flash Memory: Its Impact on Scaling of Multilevel Flash Memory Beyond the 90-nm Node

Spin-Vacancy-Induced Long-Range Order in a New Haldane-Gap Antiferromagnet

2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array

Effects of substitution of Zn for Cu in the spin-Peierls cuprate, CuGeO3 : the suppression of the spin-Peierls transition and the occurrence of a new spin-glass state

Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories

Spin-triplet excitons and anisotropy effects in the S = 1 2 gapped antiferromagnet BaCuSi2O6

Spin-triplet excitons and anisotropy effects in the gapped antiferromagnet BaCuSi2O6

Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes

Phase diagram of spin-vacancy-induced antiferromagnetism in a new Haldane compound PbNi2V2O8

Negative-source enhanced source-side injection achieving 100-ns cell programming in multilevel flash memories

Doping effects on the folded phonon mode in the spin-Peierls systems CuGeO3 and α′-NaV2O5

The Impact of Random Telegraph Signals on the Scaling of Multilevel Flash Memories

Spiral order in Ba2CuGe2O7

Effect of substitution on magnetic properties of CuGeO3

Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput

Spin-triplet excitons and anisotropy effects in the S = 1 2 gapped antiferromagnet BaCuSi 2O 6

Raman-scattering study of CuGeO3

Magnetization of pure and Zn-doped spin-Peierls cuprate CuGeO3 in high magnetic field

Antiferromagnetic long-range order caused by nonmagnetic impurities; magnetization of single-crystal Cu1−xZnxGeO3

Spin-Peierls transition in a cuprate CuGeO3

Far-infrared ESR study of cuprate compounds

Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories

Structural properties of a low-dimensional magnet CuGeO3

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