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Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-11, Vol.31 (6), p.061516

2013

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Performance-defining properties of Nb3Sn coating in SRF cavities

Superconductor science & technology, 2018-01, Vol.31 (1)

2018

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Micromechanical properties and erosive wear performance of chromium carbide based cermets

Wear, 2009-06, Vol.267 (1), p.152-159

2009

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Structural study of Li2MnO3 by electron microscopy

Journal of materials science, 2009-10, Vol.44 (20), p.5579-5587

2009

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Surface properties and crystallinity of Pinus taeda and Hymenaea stilbocarpa treated at low temperatures in different grain directions

Journal of the Indian Academy of Wood Science, 2020-06, Vol.17 (1), p.46-53

2020

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Macrotexture and growth chemistry in ultrananocrystalline diamond thin films

Thin solid films, 2005-02, Vol.473 (1), p.41-48

2005

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Growth and physical properties of epitaxial metastable Hf1-xAlxN alloys deposited on MgO(001) by ultrahigh vacuum reactive magnetron sputtering

Surface & coatings technology, 2007-12, Vol.202 (4-7), p.809-814

2007

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Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-01, Vol.21 (1), p.140-146

2003

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Microstructural characterization of thin SiO x films obtained by physical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2010-10, Vol.174 (1), p.132-136

2010

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Performance-defining properties of Nb 3 Sn coating in SRF cavities

Superconductor science & technology, 2018-11, Vol.31 (1), p.15004

2018

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Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(0 0 1)

Applied surface science, 2006-05, Vol.252 (15), p.5326-5330

2006

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Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures

Applied surface science, 2004-10, Vol.237 (1-4), p.139-145

2004

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Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

Applied physics letters, 2003-11, Vol.83 (21), p.4321-4323

2003

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Quality of YBCO thin films grown on LAO substrates exposed to the film deposition - film removal processes

Journal of physics. Conference series, 2008-05, Vol.113 (1), p.012027

2008

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Thermal stability of rhenium Schottky contacts on n -type AlxGa1−xN

Applied physics letters, 2002-08, Vol.81 (9), p.1624-1626

2002

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Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

Surface science, 1997-12, Vol.392 (1), p.L63-L68

1997

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Characterization of highly Sb-doped Si using high-resolution x-ray diffraction and transmission electron microscopy

Journal of applied physics, 1994-07, Vol.76 (2), p.763-767

1994

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Relation between electrical activation and the B-induced strain in Si determined by reciprocal lattice mapping

Semiconductor science and technology, 1994-06, Vol.9 (6), p.1272-1275

1994

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B incorporation and hole transport in fully strained heteroepitaxial Si1-xGex grown on Si(001) by gas-source MBE from Si2H6, Ge2H6, and B2H6

Journal of crystal growth, 1997-08, Vol.179 (1-2), p.97-107

1997

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Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures

Journal of crystal growth, 1994-10, Vol.143 (3), p.184-193

1994

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Schottky barrier heights of Ir/p-Si and Ir/strained p-Si1-xGex junctions

Semiconductor science and technology, 1995-04, Vol.10 (4), p.551-555

1995

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Strain determination and microstructural characterization of 50 keV Sn-ion-implanted Si(001)

Journal of applied physics, 1995-02, Vol.77 (4), p.1411-1420

1995

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In Situ X-Ray Diffraction Study of Electric-Field-Induced Domain Switching and Phase Transition in PZT-5H

Journal of the American Ceramic Society, 2005-01, Vol.88 (1), p.210-215

2005

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Phase formation and microstructure of Nb1-xAlxN alloy films grown on MgO (001) by reactive sputtering: a new ternary phase

Vacuum, 1995-12, Vol.46 (12), p.1401-1406

1995

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Growth of high-quality 3C-SiC epitaxial films on off-axis Si(001) substrates at 850 °C by reactive magnetron sputtering

Applied physics letters, 1994-08, Vol.65 (6), p.725-727

1994

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Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

Performance-defining properties of Nb3Sn coating in SRF cavities

Micromechanical properties and erosive wear performance of chromium carbide based cermets

Structural study of Li2MnO3 by electron microscopy

Surface properties and crystallinity of Pinus taeda and Hymenaea stilbocarpa treated at low temperatures in different grain directions

Macrotexture and growth chemistry in ultrananocrystalline diamond thin films

Growth and physical properties of epitaxial metastable Hf1-xAlxN alloys deposited on MgO(001) by ultrahigh vacuum reactive magnetron sputtering

Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering

Microstructural characterization of thin SiO x films obtained by physical vapor deposition

Performance-defining properties of Nb 3 Sn coating in SRF cavities

Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(0 0 1)

Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures

Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

Quality of YBCO thin films grown on LAO substrates exposed to the film deposition - film removal processes

Thermal stability of rhenium Schottky contacts on n -type AlxGa1−xN

Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy

Characterization of highly Sb-doped Si using high-resolution x-ray diffraction and transmission electron microscopy

Relation between electrical activation and the B-induced strain in Si determined by reciprocal lattice mapping

B incorporation and hole transport in fully strained heteroepitaxial Si1-xGex grown on Si(001) by gas-source MBE from Si2H6, Ge2H6, and B2H6

Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures

Schottky barrier heights of Ir/p-Si and Ir/strained p-Si1-xGex junctions

Strain determination and microstructural characterization of 50 keV Sn-ion-implanted Si(001)

In Situ X-Ray Diffraction Study of Electric-Field-Induced Domain Switching and Phase Transition in PZT-5H

Phase formation and microstructure of Nb1-xAlxN alloy films grown on MgO (001) by reactive sputtering: a new ternary phase

Growth of high-quality 3C-SiC epitaxial films on off-axis Si(001) substrates at 850 °C by reactive magnetron sputtering

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