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Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Nano letters, 2016-06, Vol.16 (6), p.3824-3830

2016

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Achieving direct band gap in germanium through integration of Sn alloying and external strain

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Strain Induced by Evaporated-Metal Contacts on Monolayer MoS2 Transistors

IEEE electron device letters, 2024-08, Vol.45 (8), p.1528-1531

2024

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Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

ACS nano, 2019-09, Vol.13 (9), p.10294-10300

2019

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Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

Nature (London), 2017-07, Vol.547 (7661), p.74-78

2017

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High-specific-power flexible transition metal dichalcogenide solar cells

Nature communications, 2021-12, Vol.12 (1), p.7034-7034, Article 7034

2021

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Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

Applied physics letters, 2014-11, Vol.105 (18)

2014

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Fast-Response Flexible Temperature Sensors with Atomically Thin Molybdenum Disulfide

Nano letters, 2022-08, Vol.22 (15), p.6135-6140

2022

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Analysis of Atomistic Dopant Variation and Fermi Level Depinning in Nanoscale Contacts

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3768-3774

2017

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High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation

Nano letters, 2021-04, Vol.21 (8), p.3443-3450

2021

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Low-threshold optically pumped lasing in highly strained germanium nanowires

Nature communications, 2017-11, Vol.8 (1), p.1845-7, Article 1845

2017

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Device and materials requirements for neuromorphic computing

Journal of physics. D, Applied physics, 2019-01, Vol.52 (11), p.113001

2019

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7-nm FinFET CMOS Design Enabled by Stress Engineering Using Si, Ge, and Sn

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1222-1230

2014

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High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts

ACS nano, 2022-06, Vol.16 (6), p.8827-8836

2022

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Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

Nano letters, 2014-01, Vol.14 (1), p.37-43

2014

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Si Heterojunction Solar Cells: A Simulation Study of the Design Issues

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4788-4795

2016

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Investigation of the Changes in Electronic Properties of Nickel Oxide (NiO x ) Due to UV/Ozone Treatment

ACS applied materials & interfaces, 2017-05, Vol.9 (20), p.17201-17207

2017

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Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High‑Q Nanophotonic Cavities

Nano letters, 2016-04, Vol.16 (4), p.2168-2173

2016

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Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1―xSnx): A Novel Route for Ge1―xSnx Nanostructure Fabrication

Nano letters, 2013-08, Vol.13 (8), p.3783-3790

2013

Volltextzugriff (PDF)

New materials for post-Si computing: Ge and GeSn devices

MRS bulletin, 2014-08, Vol.39 (8), p.678-686

2014

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Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

Nature photonics, 2008-04, Vol.2 (4), p.226-229

2008

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Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence

Optics letters, 2014-11, Vol.39 (21), p.6205-6208

2014

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Hole Mobility Enhancement in Compressively Strained Ge0.93Sn0.07 pMOSFETs

IEEE electron device letters, 2013-07, Vol.34 (7), p.831-833

2013

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Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

Optics express, 2015-06, Vol.23 (13), p.16740-16749

2015

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Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Nano letters, 2013-07, Vol.13 (7), p.3118-3123

2013

Volltextzugriff (PDF)

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Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Achieving direct band gap in germanium through integration of Sn alloying and external strain

Strain Induced by Evaporated-Metal Contacts on Monolayer MoS2 Transistors

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

High-specific-power flexible transition metal dichalcogenide solar cells

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

Fast-Response Flexible Temperature Sensors with Atomically Thin Molybdenum Disulfide

Analysis of Atomistic Dopant Variation and Fermi Level Depinning in Nanoscale Contacts

High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation

Low-threshold optically pumped lasing in highly strained germanium nanowires

Device and materials requirements for neuromorphic computing

7-nm FinFET CMOS Design Enabled by Stress Engineering Using Si, Ge, and Sn

High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts

Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

Si Heterojunction Solar Cells: A Simulation Study of the Design Issues

Investigation of the Changes in Electronic Properties of Nickel Oxide (NiO x ) Due to UV/Ozone Treatment

Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High‑Q Nanophotonic Cavities

Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1―xSnx): A Novel Route for Ge1―xSnx Nanostructure Fabrication

New materials for post-Si computing: Ge and GeSn devices

Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence

Hole Mobility Enhancement in Compressively Strained Ge0.93Sn0.07 pMOSFETs

Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

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