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Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.353-360

2010

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Energy Relaxation and Non-linear Transport in InAs Nanowires

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12029

2015

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The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

IEEE electron device letters, 2008-04, Vol.29 (4), p.306-308

2008

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Figures of merit in high-frequency and high-power GaN HEMTs

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012040

2009

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Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1909-1916

2000

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Teflon™-coated silicon apertures for supported lipid bilayer membranes

Applied physics letters, 2004-10, Vol.85 (15), p.3307-3309

2004

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Ballistic Transport in InP-Based HEMTs

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2935-2944

2009

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Brownian Dynamics Study of the Effects of Dielectric Constant on Conductivity of Porins

Journal of computational and theoretical nanoscience, 2010-12, Vol.7 (12), p.2543-2546

2010

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Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors

Journal of physics. Condensed matter, 2008-09, Vol.20 (38), p.384201-384201 (9)

2008

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Comparative analysis of SOI and GOI MOSFETs

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2545-2550

2006

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Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

Physica status solidi. C, 2010-10, Vol.7 (10), p.2502-2505

2010

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Full-band CMC simulations of terahertz HEMTs

Journal of physics. Conference series, 2008-03, Vol.109 (1), p.012001, Article 012001

2008

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Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Journal of computational electronics, 2008-09, Vol.7 (3), p.187-191

2008

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Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.87-90

2011

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Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

IEEE transactions on electron devices, 2002-01, Vol.49 (1), p.125-132

2002

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Global Modeling of high frequency devices

Journal of computational electronics, 2006-12, Vol.5 (4), p.415-418

2006

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Overshoot velocity in ultra-broadband THz studies in GaAs and InP

Physica. B, Condensed matter, 2002-03, Vol.314 (1), p.162-165

2002

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Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs

Physica status solidi. C, 2008-01, Vol.5 (1), p.135-138

2008

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Full-band Monte Carlo simulations of photo excitation in silicon diode structures

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S301-S303

2004

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Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3876-3884

2011

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Comparison of N- and Ga-Face GaN HEMTs Through Cellular Monte Carlo Simulations

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3348-3354

2010

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Ion Channel Conductance Measurements on a Silicon-Based Platform

Journal of physics. Conference series, 2006-05, Vol.38 (1), p.21-24

2006

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Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.239-243

2003

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Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs

Journal of computational electronics, 2005-04, Vol.4 (1-2), p.45-49

2005

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Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.213-217

2003

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Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

Energy Relaxation and Non-linear Transport in InAs Nanowires

The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

Figures of merit in high-frequency and high-power GaN HEMTs

Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors

Teflon™-coated silicon apertures for supported lipid bilayer membranes

Ballistic Transport in InP-Based HEMTs

Brownian Dynamics Study of the Effects of Dielectric Constant on Conductivity of Porins

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors

Comparative analysis of SOI and GOI MOSFETs

Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs

Full-band CMC simulations of terahertz HEMTs

Towards the global modeling of InGaAs-based pseudomorphic HEMTs

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

Global Modeling of high frequency devices

Overshoot velocity in ultra-broadband THz studies in GaAs and InP

Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs

Full-band Monte Carlo simulations of photo excitation in silicon diode structures

Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs

Comparison of N- and Ga-Face GaN HEMTs Through Cellular Monte Carlo Simulations

Ion Channel Conductance Measurements on a Silicon-Based Platform

Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations

Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs

Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations

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