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Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

CrystEngComm, 2018, Vol.2 (24), p.337-338

2018

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Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2088-2091

2018

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Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (16), p.2092-2095

2018

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Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si

Nanotechnology, 2019-09, Vol.30 (39), p.395602-395602

2019

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Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

Nanotechnology, 2020-03, Vol.31 (24), p.244003-244003

2020

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Self-consistent modeling of MBE self-catalyzed GaAs nanowire growth

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12008

2021

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Processes of formation of epitaxial arrays of self-catalytic GaP nanowires on Si (111)

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12127

2021

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Synthesis and characterization of GaPN/GaP heterostructures grown on silicon (001)

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12026

2020

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Microwave Schottky Diodes based on Single GaN Nanowires

Technical physics letters, 2023-12, Vol.49 (Suppl 4), p.S346-S349

2023

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Growth and optical properties of GaPN/GaP heterostructure nanowire array

Journal of physics. Conference series, 2019-11, Vol.1400 (5), p.55036

2019

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Synthesis and optical properties study of GaAs epitaxial nanoparticles on silicon

Journal of physics. Conference series, 2019-11, Vol.1400 (5), p.55038

2019

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1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers

Semiconductors (Woodbury, N.Y.), 2023-04, Vol.57 (4), p.221-230

2023

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Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon

Journal of physics. Conference series, 2020-03, Vol.1461 (1), p.12039

2020

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Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells

Journal of physics. Conference series, 2018-03, Vol.993 (1), p.12034

2018

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Influence of hydrogen plasma passivation on electrical and spectral characteristics of GaN nanowires / Si solar cells

Journal of physics. Conference series, 2018-12, Vol.1124 (4), p.41021

2018

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Epitaxial GaN nanotripods: morphology and crystal structure

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12053

2018

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GaN-nanowire/Si solar cell: numerical modeling, fabrication and characterization

Journal of physics. Conference series, 2019-03, Vol.1199 (1), p.12030

2019

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GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties

Journal of physics. Conference series, 2018-09, Vol.1092 (1), p.12013

2018

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Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.489-492

2018

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GaN nanostructures grown on Si(111) by PA-MBE via droplet epitaxy: SEM and HRTEM study

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22033

2018

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Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires

IOP conference series. Materials Science and Engineering, 2019-12, Vol.699 (1), p.12047

2019

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Modeling the semiconductor devices with negative differential resistance based on nitride nanowires

Journal of physics. Conference series, 2017-11, Vol.917 (8), p.82017

2017

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Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

Journal of physics. Conference series, 2017-11, Vol.917 (3), p.32040

2017

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Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1809-1812

2018

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Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12044

2016

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Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching

Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface

Self-consistent modeling of MBE self-catalyzed GaAs nanowire growth

Processes of formation of epitaxial arrays of self-catalytic GaP nanowires on Si (111)

Synthesis and characterization of GaPN/GaP heterostructures grown on silicon (001)

Microwave Schottky Diodes based on Single GaN Nanowires

Growth and optical properties of GaPN/GaP heterostructure nanowire array

Synthesis and optical properties study of GaAs epitaxial nanoparticles on silicon

1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers

Controllable antiphase domain density in dilute nitride GaPN/GaP heterostructures on silicon

Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells

Influence of hydrogen plasma passivation on electrical and spectral characteristics of GaN nanowires / Si solar cells

Epitaxial GaN nanotripods: morphology and crystal structure

GaN-nanowire/Si solar cell: numerical modeling, fabrication and characterization

GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

GaN nanostructures grown on Si(111) by PA-MBE via droplet epitaxy: SEM and HRTEM study

Conductive AFM study of the electronic properties of individual epitaxial GaN nanowires

Modeling the semiconductor devices with negative differential resistance based on nitride nanowires

Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode

Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy

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