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Growth Rate of and Gene Expression in Bradyrhizobium diazoefficiens USDA110 due to a Mutation in blr7984, a TetR Family Transcriptional Regulator Gene

Microbes and Environments, 2016, Vol.31(3), pp.249-259

2016

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Sub-quarter-micron gate fabrication process using phase-shifting mask for microwave GaAs devices

Japanese Journal of Applied Physics, 1991-12, Vol.30 (12B), p.3818-3821

1991

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Singlet Oxygen (1ΔgO2) as the Principal Oxidant in Myeloperoxidase-Mediated Bacterial Killing in Neutrophil Phagosome

Biochemical and biophysical research communications, 1999-09, Vol.262 (3), p.647-650

1999

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Application of active yaw control to vehicle dynamics by utilizing driving/breaking force

JSAE review, 1999-04, Vol.20 (2), p.289-295

1999

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A comparison on the Electrical Characteristics of SiO 2 , SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7R), p.4911

2005

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Improvement of threshold voltage uniformity in ion-implanted GaAs-metal-semiconductor field-effect transistors on Si

Japanese Journal of Applied Physics, 1996-11, Vol.35 (11), p.5664-5669

1996

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Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET

Japanese Journal of Applied Physics, 1989-10, Vol.28 (10A), p.L1734

1989

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A study of GaAs digital ICs on Si substrates

Japanese Journal of Applied Physics, 1993, Vol.32 (1B), p.646-649

1993

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Effect of bias sputtering on W and W-Al Schottky contact formation and its application to GaAs MESFETs

Japanese Journal of Applied Physics, 1988-11, Vol.27 (11), p.L2183-L2185

1988

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Sidegating effects in inverted AlGaAs/GaAs HEMT

Japanese Journal of Applied Physics, 1988-09, Vol.27 (9), p.L1742-L1745

1988

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The dependence of threshold voltage scattering of GaAs MESFET on annealing method

Japanese Journal of Applied Physics, 1985, Vol.24 (1), p.L35-L38

1985

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Influence of annealing method on microscopic one-to-one correlation between threshold voltage of GaAs MESFET and dislocation

Japanese Journal of Applied Physics, 1986-12, Vol.25 (12), p.L973-L975

1986

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Annealing technology under arsenic overpressure for GaAs LSI-influence on dislocation and threshold voltage

Electronics & communications in Japan. Part 2, Electronics, 1988, Vol.71 (4), p.10-18

1988

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A new insulated-gate inverted-structure modulation-doped AlGaAs/GaAs/N-AlGaAs field-effect transistor

Japanese Journal of Applied Physics, 1984-01, Vol.23 (11), p.L836-L838

1984

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Improved threshold voltage uniformity in GaAs MESFET using high purity MOCVD-grown buffer layer as a substrate for ion implantation

Japanese Journal of Applied Physics, 1984-01, Vol.23 (5), p.L290-L292

1984

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Administration of aminoglycosides to hemodialysis patients immediately before dialysis: a new dosing modality

Antimicrobial Agents and Chemotherapy, 1997-12, Vol.41 (12), p.2597-2601

1997

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High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.187-190

2003

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Evaluation of the Quality of the Gray Iron Casting Material by Ultrasonic Testing

THE JOURNAL OF THE JAPAN FOUNDRYMEN'S SOCIETY, 1982/06/25, Vol.54(6), pp.364-370

1982

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Electrical characteristics of ultraminiature active optical cable connector for PCB

2013 IEEE Electrical Design of Advanced Packaging Systems Symposium (EDAPS), 2013, p.17-20

2013

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8 Gb/s 8:1 multiplexer and 1:8 demultiplexer IC's using GaAs DCFL circuit

IEEE journal of solid-state circuits, 1992-10, Vol.27 (10), p.1359-1363

1992

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Ultrasonic Evaluation of Bonding of Steel and Cast Iron Clad with Cast Copper Alloy

THE JOURNAL OF THE JAPAN FOUNDRYMEN'S SOCIETY, 1987/11/25, Vol.59(11), pp.640-645

1987

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GaAs MESFET ring oscillator on Si substrate

IEEE transactions on electron devices, 1985-06, Vol.32 (6), p.1037-1041

1985

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Measurement of Moisture in Molding Sand by Ultrasonic Velocity

THE JOURNAL OF THE JAPAN FOUNDRYMEN'S SOCIETY, 1986/05/25, Vol.58(5), pp.356-361

1986

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銅合金でクラッドした鋼および鋳鉄の超音波による接合面の評価

鋳物, 1987/11/25, Vol.59(11), pp.640-645

1987

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超音波試験による片状黒鉛鋳鉄の材質判定

鋳物, 1982/06/25, Vol.54(6), pp.364-370

1982

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Growth Rate of and Gene Expression in Bradyrhizobium diazoefficiens USDA110 due to a Mutation in blr7984, a TetR Family Transcriptional Regulator Gene

Sub-quarter-micron gate fabrication process using phase-shifting mask for microwave GaAs devices

Singlet Oxygen (1ΔgO2) as the Principal Oxidant in Myeloperoxidase-Mediated Bacterial Killing in Neutrophil Phagosome

Application of active yaw control to vehicle dynamics by utilizing driving/breaking force

A comparison on the Electrical Characteristics of SiO 2 , SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors

Improvement of threshold voltage uniformity in ion-implanted GaAs-metal-semiconductor field-effect transistors on Si

Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET

A study of GaAs digital ICs on Si substrates

Effect of bias sputtering on W and W-Al Schottky contact formation and its application to GaAs MESFETs

Sidegating effects in inverted AlGaAs/GaAs HEMT

The dependence of threshold voltage scattering of GaAs MESFET on annealing method

Influence of annealing method on microscopic one-to-one correlation between threshold voltage of GaAs MESFET and dislocation

Annealing technology under arsenic overpressure for GaAs LSI-influence on dislocation and threshold voltage

A new insulated-gate inverted-structure modulation-doped AlGaAs/GaAs/N-AlGaAs field-effect transistor

Improved threshold voltage uniformity in GaAs MESFET using high purity MOCVD-grown buffer layer as a substrate for ion implantation

Administration of aminoglycosides to hemodialysis patients immediately before dialysis: a new dosing modality

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Evaluation of the Quality of the Gray Iron Casting Material by Ultrasonic Testing

Electrical characteristics of ultraminiature active optical cable connector for PCB

8 Gb/s 8:1 multiplexer and 1:8 demultiplexer IC's using GaAs DCFL circuit

Ultrasonic Evaluation of Bonding of Steel and Cast Iron Clad with Cast Copper Alloy

GaAs MESFET ring oscillator on Si substrate

Measurement of Moisture in Molding Sand by Ultrasonic Velocity

銅合金でクラッドした鋼および鋳鉄の超音波による接合面の評価

超音波試験による片状黒鉛鋳鉄の材質判定

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