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Gate Reliability of p-GaN HEMT With Gate Metal Retraction

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4829-4835

2019

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The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.233-244

2008

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TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.507-513

2022

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Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1858-1863

2000

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Total reflection X-ray fluorescence used to distinguish mechanically separated from non-mechanically separated meat

Spectrochimica acta. Part B: Atomic spectroscopy, 2018-10, Vol.148, p.16-22

2018

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Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2445-2455

2003

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NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Solid-state electronics, 2019-05, Vol.155, p.7-19

2019

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Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications

Solar energy materials and solar cells, 2015-03, Vol.134, p.407-416

2015

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Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-6

2024

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Irradiation detection of herbal ingredients used in plant food supplements by Electron Spin Resonance on samples pre-treated with alcoholic extraction

Radiation physics and chemistry (Oxford, England : 1993), 2020-11, Vol.176, p.108946, Article 108946

2020

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Design for Services

1st edition., 2011

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Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.10B.2-1-10B.2-6

2022

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Numerical simulation and modeling of thermal transient in silicon power devices

Solid-state electronics, 2013-10, Vol.88, p.69-72

2013

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Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2736-2743

2005

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Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-5

2020

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An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.802-808

2003

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Simulation of self-heating effects in different SOI MOS architectures

Solid-state electronics, 2009-04, Vol.53 (4), p.445-451

2009

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Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2842-2850

2001

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Characterization and Modeling of BTI in SiC MOSFETs

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.82-85

2019

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In vivo evaluation of PhiC31 recombinase activity using a self-excision cassette

Nucleic acids research, 2008-11, Vol.36 (20), p.e134-e134

2008

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Computational efficient RCWA method for simulation of thin film solar cells

Optical and quantum electronics, 2012-06, Vol.44 (3-5), p.149-154

2012

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TCAD predictions of hot-electron injection in p-type LDMOS transistors

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.86-89

2019

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A methodology to account for the finger interruptions in solar cell performance

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2500-2503

2012

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An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

Solid-state electronics, 2005-05, Vol.49 (5), p.727-732

2005

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Gate Reliability of p-GaN HEMT With Gate Metal Retraction

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

Total reflection X-ray fluorescence used to distinguish mechanically separated from non-mechanically separated meat

Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

Irradiation detection of herbal ingredients used in plant food supplements by Electron Spin Resonance on samples pre-treated with alcoholic extraction

Design for Services

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

Numerical simulation and modeling of thermal transient in silicon power devices

Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

Simulation of self-heating effects in different SOI MOS architectures

Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

Characterization and Modeling of BTI in SiC MOSFETs

In vivo evaluation of PhiC31 recombinase activity using a self-excision cassette

Computational efficient RCWA method for simulation of thin film solar cells

TCAD predictions of hot-electron injection in p-type LDMOS transistors

A methodology to account for the finger interruptions in solar cell performance

An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

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