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Mono- and Bilayer WS2 Light-Emitting Transistors

Nano letters, 2014-04, Vol.14 (4), p.2019-2025

2014

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Electrostatically Induced Superconductivity at the Surface of WS2

Nano letters, 2015-02

2015

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Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics

Advanced materials (Weinheim), 2023-10, Vol.35 (43), p.e2204904-e2204904

2023

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Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Nano letters, 2017-09, Vol.17 (9), p.5719-5725

2017

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Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

Science (American Association for the Advancement of Science), 2022-05, Vol.376 (6594), p.731-738

2022

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Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Laminated Ferroelectric FET With Large Memory Window and High Reliability

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2411-2416

2024

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Interfacial Layer Selection Methodology for Customized Ferroelectric Memories

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1907-1912

2024

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Resonant Tunneling Spectroscopy to Probe the Giant Stark Effect in Atomically Thin Materials

Advanced materials (Weinheim), 2020-03, Vol.32 (12), p.e1906942-n/a

2020

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Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

Plasma processes and polymers, 2022-06, Vol.19 (6), p.n/a

2022

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An analytical interpretation of the memory window in ferroelectric field-effect transistors

Applied physics letters, 2023-11, Vol.123 (22)

2023

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Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)

Advanced materials (Weinheim), 2023-10, Vol.35 (43)

2023

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Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas

Coatings (Basel), 2022-09, Vol.12 (9), p.1342

2022

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Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

Applied physics letters, 2014-04, Vol.104 (17)

2014

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Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing

Neuromorphic computing and engineering, 2023-06, Vol.3 (2), p.24001

2023

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Gate-induced superconductivity in atomically thin MoS2 crystals

Nature nanotechnology, 2016-04, Vol.11 (4), p.339-344

2016

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Puzzle-CAM: Improved Localization Via Matching Partial And Full Features

2021 IEEE International Conference on Image Processing (ICIP), 2021, p.639-643

2021

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Validating negative differential capacitance for advanced low-power devices

Nature electronics, 2023-05, Vol.6 (5), p.335-336

2023

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Observation of chiral quantum-Hall edge states in graphene

Applied physics letters, 2009-04, Vol.94 (16), p.162113-162113-3

2009

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Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

Materials today (Kidlington, England), 2021-11, Vol.50, p.8-15

2021

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Observation of supercurrent in PbIn-graphene-PbIn Josephson junction

Physical review. B, Condensed matter and materials physics, 2011-03, Vol.83 (9), Article 094503

2011

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Outside Front Cover: Plasma Process. Polym. 6/2022

Plasma processes and polymers, 2022-06, Vol.19 (6), p.n/a

2022

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Self-Aligned Multichannel Graphene Nanoribbon Transistor Arrays Fabricated at Wafer Scale

Nano letters, 2016-09, Vol.16 (9), p.5378-5385

2016

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Unveiling the Origin of Robust Ferroelectricity in Sub‑2 nm Hafnium Zirconium Oxide Films

ACS applied materials & interfaces, 2021-08, Vol.13 (30), p.36499-36506

2021

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Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH[sub.4] Capacitively Coupled Plasmas

Coatings (Basel), 2022-09, Vol.12 (9)

2022

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Mono- and Bilayer WS2 Light-Emitting Transistors

Electrostatically Induced Superconductivity at the Surface of WS2

Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength-Dependent Mapping

Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Interfacial Layer Selection Methodology for Customized Ferroelectric Memories

Resonant Tunneling Spectroscopy to Probe the Giant Stark Effect in Atomically Thin Materials

Importance of higher‐level excited species in argon remote plasma sources: Numerical modeling with consideration of detailed chemical reaction pathways

An analytical interpretation of the memory window in ferroelectric field-effect transistors

Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)

Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing

Gate-induced superconductivity in atomically thin MoS2 crystals

Puzzle-CAM: Improved Localization Via Matching Partial And Full Features

Validating negative differential capacitance for advanced low-power devices

Observation of chiral quantum-Hall edge states in graphene

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

Observation of supercurrent in PbIn-graphene-PbIn Josephson junction

Outside Front Cover: Plasma Process. Polym. 6/2022

Self-Aligned Multichannel Graphene Nanoribbon Transistor Arrays Fabricated at Wafer Scale

Unveiling the Origin of Robust Ferroelectricity in Sub‑2 nm Hafnium Zirconium Oxide Films

Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH[sub.4] Capacitively Coupled Plasmas

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