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The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

Nanotechnology, 2018-06, Vol.29 (33), p.335201-335201

2018

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Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

Applied physics letters, 2020-12, Vol.117 (24)

2020

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Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

Applied physics letters, 2018-07, Vol.113 (5)

2018

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Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.745-750

2020

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Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors

Journal of applied physics, 2021-06, Vol.129 (24)

2021

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Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process

IEEE electron device letters, 2021-06, Vol.42 (6), p.812-815

2021

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Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering

ACS applied materials & interfaces, 2020-12, Vol.12 (51), p.57539-57546

2020

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Oxide electronics: Translating materials science from lab-to-fab

MRS bulletin, 2021-11, Vol.46 (11), p.1028-1036

2021

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Noise-Robust Multimodal Audio-Visual Speech Recognition System for Speech-Based Interaction Applications

Sensors (Basel, Switzerland), 2022-10, Vol.22 (20), p.7738

2022

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End-to-End Sentence-Level Multi-View Lipreading Architecture with Spatial Attention Module Integrated Multiple CNNs and Cascaded Local Self-Attention-CTC

Sensors (Basel, Switzerland), 2022-05, Vol.22 (9), p.3597

2022

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End-to-End Lip-Reading Open Cloud-Based Speech Architecture

Sensors (Basel, Switzerland), 2022-04, Vol.22 (8), p.2938

2022

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Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

Proceedings of the IEEE, 2015-04, Vol.103 (4), p.644-664

2015

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HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

IEEE electron device letters, 2017-06, Vol.38 (6), p.732-735

2017

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Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate

AIP advances, 2020-01, Vol.10 (1), p.015104-015104-7

2020

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Lipreading Architecture Based on Multiple Convolutional Neural Networks for Sentence-Level Visual Speech Recognition

Sensors (Basel, Switzerland), 2021-12, Vol.22 (1), p.72

2021

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Amorphous Oxide Semiconductor TFTs for Displays and Imaging

Journal of display technology, 2014-11, Vol.10 (11), p.917-927

2014

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Ar plasma treated ZnON transistor for future thin film electronics

Applied physics letters, 2015-09, Vol.107 (12)

2015

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Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

Applied physics letters, 2018-02, Vol.112 (9)

2018

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Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

Advanced materials (Weinheim), 2014-06, Vol.26 (21), p.3451-3458

2014

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A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology

Nano convergence, 2022-10, Vol.9 (1), p.44-44, Article 44

2022

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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Nature materials, 2012-02, Vol.11 (4), p.301-305

2012

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A method of controlling the imprint effect in hafnia ferroelectric device

Applied physics letters, 2023-01, Vol.122 (2)

2023

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Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

Nano letters, 2015-09, Vol.15 (9), p.5875-5882

2015

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Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors

Applied physics letters, 2014-03, Vol.104 (13)

2014

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The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors

Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process

Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering

Oxide electronics: Translating materials science from lab-to-fab

Noise-Robust Multimodal Audio-Visual Speech Recognition System for Speech-Based Interaction Applications

End-to-End Sentence-Level Multi-View Lipreading Architecture with Spatial Attention Module Integrated Multiple CNNs and Cascaded Local Self-Attention-CTC

End-to-End Lip-Reading Open Cloud-Based Speech Architecture

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier

Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate

Lipreading Architecture Based on Multiple Convolutional Neural Networks for Sentence-Level Visual Speech Recognition

Amorphous Oxide Semiconductor TFTs for Displays and Imaging

Ar plasma treated ZnON transistor for future thin film electronics

Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films

Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

A method of controlling the imprint effect in hafnia ferroelectric device

Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors

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