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Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

Crystal growth & design, 2016-02, Vol.16 (2), p.596-604

2016

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Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO2-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors

Nanotechnology, 2012-05, Vol.23 (17), p.175501

2012

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Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation

Nano letters, 2011-02, Vol.11 (2), p.548-555

2011

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Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires

Nano letters, 2012-09, Vol.12 (9), p.4600-4604

2012

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Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants

Nanotechnology, 2011-07, Vol.22 (29), p.295503-295503

2011

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Near-field control and imaging of free charge carrier variations in GaN nanowires

Applied physics letters, 2016-02, Vol.108 (7)

2016

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Learning Atom Probe Tomography time-of-flight peaks for mass-to-charge ratio spectrometry

Ultramicroscopy, 2022-07, Vol.237, p.113521-113521, Article 113521

2022

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Atom probe tomography using an extreme ultraviolet trigger pulse

Review of scientific instruments, 2023-09, Vol.94 (9)

2023

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GaN Nanowires Grown by Molecular Beam Epitaxy

IEEE journal of selected topics in quantum electronics, 2011-07, Vol.17 (4), p.847-858

2011

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Fabrication of Specimens for Atom Probe Tomography Using a Combined Gallium and Neon Focused Ion Beam Milling Approach

Microscopy and microanalysis, 2023-09, Vol.29 (5), p.1628-1638

2023

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On-Chip Optical Interconnects Made with Gallium Nitride Nanowires

Nano letters, 2013-02, Vol.13 (2), p.374-377

2013

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An algorithm for correcting systematic energy deficits in the atom probe mass spectra of insulating samples

Ultramicroscopy, 2020-06, Vol.213, p.112995-112995, Article 112995

2020

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Microwave Near-Field Imaging of Two-Dimensional Semiconductors

Nano letters, 2015-02, Vol.15 (2), p.1122-1127

2015

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Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

Journal of physical chemistry. C, 2021-02, Vol.125 (4), p.2626-2635

2021

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Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy

Nanotechnology, 2020-10, Vol.31 (42), p.424002-424002

2020

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Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Journal of applied physics, 2008-06, Vol.103 (12), p.124309-124309-6

2008

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Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Journal of applied physics, 2011-09, Vol.110 (5), p.053506-053506-7

2011

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Field Ion Emission in an Atom Probe Microscope Triggered by Femtosecond-Pulsed Coherent Extreme Ultraviolet Light

Microscopy and microanalysis, 2020-04, Vol.26 (2), p.258-266

2020

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Measurement of the electrostatic edge effect in wurtzite GaN nanowires

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires

Journal of applied physics, 2011-02, Vol.109 (4), p.044312-044312-7

2011

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Atom Probe Tomography Using a Wavelength-Tunable Femtosecond-Pulsed Coherent Extreme Ultraviolet Light Source

Microscopy and microanalysis, 2019-08, Vol.25 (S2), p.314-315

2019

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Low-frequency noise in gallium nitride nanowire mechanical resonators

Applied physics letters, 2012-12, Vol.101 (23)

2012

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A Three-Dimensional Atom Probe Microscope Incorporating a Wavelength-Tuneable Femtosecond-Pulsed Coherent Extreme Ultraviolet Light Source

MRS advances, 2019-09, Vol.4 (44-45), p.2367-2375

2019

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Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

Applied physics letters, 2006-05, Vol.88 (21), p.213106-213106-3

2006

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Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

Methanol, ethanol and hydrogen sensing using metal oxide and metal (TiO2-Pt) composite nanoclusters on GaN nanowires: a new route towards tailoring the selectivity of nanowire/nanocluster chemical sensors

Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation

Noncontact Measurement of Charge Carrier Lifetime and Mobility in GaN Nanowires

Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants

Near-field control and imaging of free charge carrier variations in GaN nanowires

Learning Atom Probe Tomography time-of-flight peaks for mass-to-charge ratio spectrometry

Atom probe tomography using an extreme ultraviolet trigger pulse

GaN Nanowires Grown by Molecular Beam Epitaxy

Fabrication of Specimens for Atom Probe Tomography Using a Combined Gallium and Neon Focused Ion Beam Milling Approach

On-Chip Optical Interconnects Made with Gallium Nitride Nanowires

An algorithm for correcting systematic energy deficits in the atom probe mass spectra of insulating samples

Microwave Near-Field Imaging of Two-Dimensional Semiconductors

Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

Crystallographic polarity measurements in two-terminal GaN nanowire devices by lateral piezoresponse force microscopy

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Field Ion Emission in an Atom Probe Microscope Triggered by Femtosecond-Pulsed Coherent Extreme Ultraviolet Light

Measurement of the electrostatic edge effect in wurtzite GaN nanowires

Injection-level-dependent internal quantum efficiency and lasing in low-defect GaN nanowires

Atom Probe Tomography Using a Wavelength-Tunable Femtosecond-Pulsed Coherent Extreme Ultraviolet Light Source

Low-frequency noise in gallium nitride nanowire mechanical resonators

A Three-Dimensional Atom Probe Microscope Incorporating a Wavelength-Tuneable Femtosecond-Pulsed Coherent Extreme Ultraviolet Light Source

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

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