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Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2729-2734

2016

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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

Microelectronic engineering, 2013-09, Vol.109, p.236-239

2013

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High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

Microelectronic engineering, 2013-09, Vol.109, p.223-226

2013

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Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium

Physica status solidi. A, Applications and materials science, 2024-07

2024

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High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

ACS applied materials & interfaces, 2015-01, Vol.7 (1), p.62-67

2015

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On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes

Advanced electronic materials, 2022-02, Vol.8 (2), p.n/a

2022

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Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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High pressure sputtering as a viable technique for future high permittivity dielectric on III–V integration: GdOx on InP demonstration

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2690-2698

2007

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Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide

Physica status solidi. A, Applications and materials science, 2024-04

2024

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New Developments in Charge Pumping Measurements on Thin Stacked Dielectrics

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.3184-3191

2008

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Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1705-1712

2007

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Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd sub(2)O sub(3) as Gate Dielectric

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2729-2734

2016

Volltextzugriff (PDF)

Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd 2 O 3 as Gate Dielectric

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2729-2734

2016

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High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells

2021 13th Spanish Conference on Electron Devices (CDE), 2021, p.12-14

2021

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High Pressure Sputtering of Mo Targets in Mixed Ar/O2/H2 Atmospheres for Hole Selective Contacts in Photovoltaic Cells

2023 14th Spanish Conference on Electron Devices (CDE), 2023, p.1-4

2023

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Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells

2023 14th Spanish Conference on Electron Devices (CDE), 2023, p.1-4

2023

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High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments: Insulating Films on Semiconductors 2013

Microelectronic engineering, 2013, Vol.109, p.223-226

2013

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Reliability of Strained-Si Devices With Post-Oxide-Deposition Strain Introduction

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3432-3441

2008

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Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited?

Microelectronic engineering, 2007-09, Vol.84 (9), p.2058-2062

2007

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Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1705-1712

2007

Volltextzugriff (PDF)

Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.1878-1881

2007

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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation: Insulating Films on Semiconductors 2013

Microelectronic engineering, 2013, Vol.109, p.236-239

2013

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Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium

High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

High pressure sputtering as a viable technique for future high permittivity dielectric on III–V integration: GdOx on InP demonstration

Interface quality of Sc2O3 and Gd2O3 films based metal–insulator–silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide

New Developments in Charge Pumping Measurements on Thin Stacked Dielectrics

Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd sub(2)O sub(3) as Gate Dielectric

Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd 2 O 3 as Gate Dielectric

High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells

High Pressure Sputtering of Mo Targets in Mixed Ar/O2/H2 Atmospheres for Hole Selective Contacts in Photovoltaic Cells

Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments: Insulating Films on Semiconductors 2013

Reliability of Strained-Si Devices With Post-Oxide-Deposition Strain Introduction

Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited?

Accurate Gate Impedance Determination on Ultraleaky MOSFETs by Fitting to a Three-Lumped-Parameter Model atFrequencies From DC to RF

Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation: Insulating Films on Semiconductors 2013

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