UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Delay and Power Evaluation of Negative Capacitance Ferroelectric MOSFET Based on SPICE Model

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2403-2408

2017

Volltextzugriff (PDF)

Au-Free Normally-Off AlGaN/GaN-on-Si MIS-HEMTs Using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures

IEEE electron device letters, 2014-05, Vol.35 (5), p.569-571

2014

Volltextzugriff (PDF)

Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3144-3152

2010

Volltextzugriff (PDF)

n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport

IEEE transactions on electron devices, 2007-02, Vol.54 (2), p.249-256

2007

Volltextzugriff (PDF)

In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

IEEE electron device letters, 2008-06, Vol.29 (6), p.553-556

2008

Volltextzugriff (PDF)

Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices

IEEE electron device letters, 2010-07, Vol.31 (7), p.719-721

2010

Volltextzugriff (PDF)

Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal-ferroelectric-metal-insulator-semiconductor FET and its dynamic behaviour based on Landau theory

Semiconductor science and technology, 2015-04, Vol.30 (4), p.45011

2015

Volltextzugriff (PDF)

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2164-2173

2014

Volltextzugriff (PDF)

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

IEEE electron device letters, 2009-09, Vol.30 (9), p.981-983

2009

Volltextzugriff (PDF)

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.339-345

2015

Volltextzugriff (PDF)

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

IEEE electron device letters, 2015-04, Vol.36 (4), p.381-383

2015

Volltextzugriff (PDF)

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

IEEE electron device letters, 2008-02, Vol.29 (2), p.192-194

2008

Volltextzugriff (PDF)

The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

Applied physics letters, 2016-06, Vol.108 (23)

2016

Volltextzugriff (PDF)

Modelling temperature dependence on AlGaN GaN power HEMT device characteristics

Semiconductor science and technology, 2013-12, Vol.28 (12), p.125010

2013

Volltextzugriff (PDF)

Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells

IEEE journal of photovoltaics, 2017-05, Vol.7 (3), p.755-762

2017

Volltextzugriff (PDF)

Contact Technology for Strained nFinFETs With Silicon-Carbon Source/Drain Stressors Featuring Sulfur Implant and Segregation

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1046-1055

2012

Volltextzugriff (PDF)

High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

Semiconductor science and technology, 2015-12, Vol.31 (2)

2015

Volltextzugriff (PDF)

Design of Gradient Oxide-Bypassed Superjunction Power MOSFET Devices

IEEE transactions on power electronics, 2007-07, Vol.22 (4), p.1303-1310

2007

Volltextzugriff (PDF)

Contact-Resistance Reduction for Strained n-FinFETs With Silicon-Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3852-3862

2011

Volltextzugriff (PDF)

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

Solid-state electronics, 2012-11, Vol.77, p.51-55

2012

Volltextzugriff (PDF)

A Smart-Power Synchronous Rectifier by CMOS Process

IEEE transactions on power electronics, 2010-09, Vol.25 (9), p.2469-2477

2010

Volltextzugriff (PDF)

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

IEEE electron device letters, 2008-01, Vol.29 (1), p.89-92

2008

Volltextzugriff (PDF)

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2910-2917

2007

Volltextzugriff (PDF)

Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

IEEE transactions on electron devices, 2008-09, Vol.55 (9), p.2475-2483

2008

Volltextzugriff (PDF)

Strained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.850-857

2008

Volltextzugriff (PDF)

1 – 25 von 246

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(161)
Mit Volltextzugriff
(220)

Publikationsform

Sprache

Englisch
(242)
Japanisch
(37)

Erscheinungsjahr

n.n

Thema

Science & Technology
(164)
Technology
(128)
Engineering
(112)
Engineering, Electrical & Electronic
(109)
Physical Sciences
(87)
Physics
(84)
Electronics
(72)
Exact Sciences And Technology
(72)
Applied Sciences
(70)
Physics, Applied
(70)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(68)
Transistors
(63)
Silicon
(59)
Mosfet Circuits
(39)
Fabrication
(36)
Capacitive Sensors
(33)
Logic Gates
(33)
Devices
(30)
Mosfets
(30)
Strain
(28)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Delay and Power Evaluation of Negative Capacitance Ferroelectric MOSFET Based on SPICE Model

Au-Free Normally-Off AlGaN/GaN-on-Si MIS-HEMTs Using Combined Partially Recessed and Fluorinated Trap-Charge Gate Structures

Device Physics and Characteristics of Graphene Nanoribbon Tunneling FETs

n-MOSFET With Silicon-Carbon Source/Drain for Enhancement of Carrier Transport

In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs

Modeling of Stress-Retarded Thermal Oxidation of Nonplanar Silicon Structures for Realization of Nanoscale Devices

Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal-ferroelectric-metal-insulator-semiconductor FET and its dynamic behaviour based on Landau theory

Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

Phenomenon of Drain Current Instability on p-GaN Gate AlGaN/GaN HEMTs

6.5 V High Threshold Voltage AlGaN/GaN Power Metal-Insulator-Semiconductor High Electron Mobility Transistor Using Multilayer Fluorinated Gate Stack

A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-Channel MOSFET

The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment

Modelling temperature dependence on AlGaN GaN power HEMT device characteristics

Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells

Contact Technology for Strained nFinFETs With Silicon-Carbon Source/Drain Stressors Featuring Sulfur Implant and Segregation

High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

Design of Gradient Oxide-Bypassed Superjunction Power MOSFET Devices

Contact-Resistance Reduction for Strained n-FinFETs With Silicon-Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation

Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors

A Smart-Power Synchronous Rectifier by CMOS Process

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions

Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content

Strained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance

Suchergebnisse filtern