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Innovation en santé au service des urgences et des cliniciens-chercheurs : le parcours et l’évaluation clinique d’un dispositif médical

Annales françaises de médecine d'urgence, 2022-01, Vol.12 (1), p.36-43

2022

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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

Applied physics letters, 2022-01, Vol.120 (4)

2022

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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Applied physics letters, 2012-01, Vol.100 (5), p.051101-051101-4

2012

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MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Journal of crystal growth, 2015-03, Vol.414, p.119-122

2015

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Interface state effects in GaN Schottky diodes

Thin solid films, 2012-11, Vol.522, p.345-351

2012

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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Optical materials express, 2015-02, Vol.5 (2), p.380-392

2015

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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Journal of crystal growth, 2015-12, Vol.432, p.37-44

2015

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Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion

Optical materials, 2014-02, Vol.36 (4), p.764-768

2014

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Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Optical materials express, 2017-02, Vol.7 (2), p.376-385

2017

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Photoinduced doping in hexagonal boron nitride

Applied physics letters, 2023-06, Vol.122 (26)

2023

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Characteristics of the surface microstructures in thick InGaN layers on GaN

Optical materials express, 2013-08, Vol.3 (8), p.1111-1118

2013

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Single crystalline boron rich B(Al)N alloys grown by MOVPE

Applied physics letters, 2020-01, Vol.116 (4)

2020

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Bandgap energy bowing parameter of strained and relaxed InGaN layers

Optical materials express, 2014-05, Vol.4 (5), p.1030-1041

2014

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Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals

Applied physics. B, Lasers and optics, 2008-09, Vol.92 (4), p.603-608, Article 603

2008

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Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

Applied physics letters, 2015-06, Vol.106 (24)

2015

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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Acta materialia, 2013-10, Vol.61 (17), p.6587-6596

2013

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Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

Solar energy materials and solar cells, 2017-01, Vol.159, p.405-411

2017

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Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree

Journal of crystal growth, 2016-01, Vol.434, p.72-76

2016

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Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal

Applied physics. B, Lasers and optics, 2008-06, Vol.91 (3-4), p.489-492

2008

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Observation of the early stages of GaN thermal decomposition at 1200 °C under N2

Materials science & engineering. B, Solid-state materials for advanced technology, 2018-01, Vol.227, p.16-21

2018

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Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

Applied physics letters, 2011-11, Vol.99 (22), p.221101-221101-3

2011

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Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Applied physics letters, 2015-09, Vol.107 (11)

2015

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Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals

Applied physics. B, Lasers and optics, 2003-07, Vol.76 (7), p.765-769

2003

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Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Journal of applied physics, 2014-10, Vol.116 (16), p.163105-163105-6

2014

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Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN Si(111) and GaN templates

Nanotechnology, 2016-03, Vol.27 (11), p.115602-115608

2016

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Innovation en santé au service des urgences et des cliniciens-chercheurs : le parcours et l’évaluation clinique d’un dispositif médical

A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Interface state effects in GaN Schottky diodes

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Calculation of the dispersion of the electro-optical and second harmonic coefficients from the refractive index dispersion

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Photoinduced doping in hexagonal boron nitride

Characteristics of the surface microstructures in thick InGaN layers on GaN

Single crystalline boron rich B(Al)N alloys grown by MOVPE

Bandgap energy bowing parameter of strained and relaxed InGaN layers

Electro-optic and dielectric properties of Hafnium-doped congruent lithium niobate crystals

Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree

Frequency and wavelength dependencies of the electro-optic coefficients in SBN:60 single crystal

Observation of the early stages of GaN thermal decomposition at 1200 °C under N2

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN Si(111) and GaN templates

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