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All-solid-source molecular beam epitaxy for growth of III–V compound semiconductors

Thin solid films, 1997-09, Vol.306 (2), p.237-243

1997

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High performance laser diode bars with aluminum-free active regions

Optics express, 1999-01, Vol.4 (1), p.3-11

1999

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On degradation of ZnSe-based blue-green diode lasers

Journal of applied physics, 1995-04, Vol.77 (8), p.4150-4152

1995

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Band offsets at the GaInP/GaAs heterojunction

Journal of applied physics, 1997-10, Vol.82 (7), p.3374-3380

1997

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Monolithic super-bright red resonant cavity light-emitting diode grown by solid source molecular beam epitaxy

IEEE photonics technology letters, 1998-07, Vol.10 (7), p.923-925

1998

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Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry

Applied physics letters, 1995-10, Vol.67 (15), p.2197-2199

1995

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Study of single and double Si δ-doped GaAs layers by spectral photoconductivity measurements

Thin solid films, 1999-03, Vol.342 (1-2), p.262-265

1999

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Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

Thin solid films, 2000-02, Vol.360 (1), p.195-204

2000

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Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy

Electronics letters, 1997-11, Vol.33 (23), p.1989

1997

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Pseudomorphic separate confinement heterostructure blue-green diode lasers

Applied physics letters, 1993-11, Vol.63 (20), p.2723-2725

1993

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Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

Applied physics letters, 1995-07, Vol.67 (3), p.407-409

1995

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Diffusion of Au in ZnSe and its dependence on crystal quality

Journal of applied physics, 1999-01, Vol.85 (2), p.799-802

1999

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Monolithic 1.3 mu m resonant cavity light emitting diode grown by solid source molecular beam epitaxy

Electronics letters, 1998-07, Vol.34 (15), p.1519-1520

1998

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All solid source molecular beam epitaxy growth of 1.35μm wavelength strained-layer GaInAsP quantum well laser

Electronics letters, 1995-05, Vol.31 (10), p.797-799

1995

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The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy

Journal of applied physics, 1990-04, Vol.67 (7), p.3378-3381

1990

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Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-02, Vol.51 (1), p.18-21

1998

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Unipolar avalanche multiplication phenomenon in multiquantum well structures

Applied physics letters, 1993-04, Vol.62 (14), p.1664-1666

1993

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The development of low voltage room temperature continuous wave laser diodes

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.790-796

1995

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Molecular beam epitaxy of p -type ZnSSe using a nitric oxide plasma source

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-07, Vol.15 (4), p.2426-2427

1997

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Study of ohmic multilayer metal contacts to p -type ZnSe

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1999-03, Vol.17 (2), p.347-353

1999

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Properties of strained In0.2Ga0.8As/GaAs superlattices with various barrier thicknesses

Journal of applied physics, 1991-03, Vol.69 (5), p.3378-3380

1991

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GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

Electronics letters, 1992-01, Vol.28 (1), p.32-34

1992

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Study of ZnSe-Based Layer Structures for Blue-Green Laser Diodes

physica status solidi (b), 1995-02, Vol.187 (2), p.337-346

1995

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Gain characteristics of blue/green II-VI quantum well diode lasers

Applied physics letters, 1994-10, Vol.65 (15), p.1863-1864

1994

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Epitaxial lift-off of ZnSe based II–VI structures

Applied physics letters, 1995-02, Vol.66 (9), p.1086-1088

1995

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All-solid-source molecular beam epitaxy for growth of III–V compound semiconductors

High performance laser diode bars with aluminum-free active regions

On degradation of ZnSe-based blue-green diode lasers

Band offsets at the GaInP/GaAs heterojunction

Monolithic super-bright red resonant cavity light-emitting diode grown by solid source molecular beam epitaxy

Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry

Study of single and double Si δ-doped GaAs layers by spectral photoconductivity measurements

Structural characterization of molecular beam epitaxy grown ZnSe-based layers on GaAs substrates for blue–green laser diodes

Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy

Pseudomorphic separate confinement heterostructure blue-green diode lasers

Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

Diffusion of Au in ZnSe and its dependence on crystal quality

Monolithic 1.3 mu m resonant cavity light emitting diode grown by solid source molecular beam epitaxy

All solid source molecular beam epitaxy growth of 1.35μm wavelength strained-layer GaInAsP quantum well laser

The effects of strain on morphology and structural properties of InGaAs/InP(001) grown by molecular beam epitaxy

Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors

Unipolar avalanche multiplication phenomenon in multiquantum well structures

The development of low voltage room temperature continuous wave laser diodes

Molecular beam epitaxy of p -type ZnSSe using a nitric oxide plasma source

Study of ohmic multilayer metal contacts to p -type ZnSe

Properties of strained In0.2Ga0.8As/GaAs superlattices with various barrier thicknesses

GaAs/AlGaAs delta-doped staircase avalanche photodiode with separated absorption layer

Study of ZnSe-Based Layer Structures for Blue-Green Laser Diodes

Gain characteristics of blue/green II-VI quantum well diode lasers

Epitaxial lift-off of ZnSe based II–VI structures

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