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Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Solid-state electronics, 2013-04, Vol.82, p.103-110

2013

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High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

Journal of instrumentation, 2024-02, Vol.19 (2), p.P02024

2024

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On performance scaling and speed of junctionless transistors

Solid-state electronics, 2013-01, Vol.79, p.18-21

2013

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Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Journal of contemporary physics, 2021-10, Vol.56 (4), p.324-331

2021

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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Journal of instrumentation, 2023-01, Vol.18 (1), p.C01061

2023

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Role of the gate in ballistic nanowire SOI MOSFETs

Solid-state electronics, 2015-10, Vol.112, p.24-28

2015

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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2024-08, Vol.1065, p.169497, Article 169497

2024

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Principle of the electrically induced Transient Current Technique

Journal of instrumentation, 2018-05, Vol.13 (5), p.P05021-P05021

2018

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Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Organic electronics, 2013-11, Vol.14 (11), p.2756-2761

2013

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Transient current technique for charged traps detection in silicon bonded interfaces

AIP advances, 2019-02, Vol.9 (2), p.025307-025307-9

2019

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Explicit Compact Model for Ultranarrow Body FinFETs

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1543-1547

2009

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Noise modeling methodologies in the presence of mobility degradation and their equivalence

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.348-355

2006

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New architecture for the analog front-end of Medipix4

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2020-10, Vol.978, p.164412, Article 164412

2020

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Noise Modeling in Lateral Nonuniform MOSFET

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1994-2001

2007

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A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

Solid-state electronics, 2006-04, Vol.50 (4), p.687-693

2006

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The ferroelectric MOSFET: a self-consistent quasi-static model and its implications

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2145-2153

2004

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SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

IEEE sensors journal, 2009-08, Vol.9 (8), p.994-1001

2009

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Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.60-71

2012

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Compact modeling of gate sidewall capacitance of DG-MOSFET

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2655-2657

2006

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Analytical model for Transient Current Technique (TCT) signal prediction and analysis for thin interface characterization

Journal of instrumentation, 2016-12, Vol.11 (12), p.C12080-C12080

2016

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Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Journal of instrumentation, 2016-08, Vol.11 (8), p.P08016-P08016, Article P08016

2016

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Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2044-2050

2006

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Global Modeling Strategy of Parasitic Coupled Currents Induced by Minority-Carrier Propagation in Semiconductor Substrates

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.263-272

2010

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Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.406-417

2003

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A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1710-1721

2011

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Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

On performance scaling and speed of junctionless transistors

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Role of the gate in ballistic nanowire SOI MOSFETs

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Principle of the electrically induced Transient Current Technique

Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Transient current technique for charged traps detection in silicon bonded interfaces

Explicit Compact Model for Ultranarrow Body FinFETs

Noise modeling methodologies in the presence of mobility degradation and their equivalence

New architecture for the analog front-end of Medipix4

Noise Modeling in Lateral Nonuniform MOSFET

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

The ferroelectric MOSFET: a self-consistent quasi-static model and its implications

SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Compact modeling of gate sidewall capacitance of DG-MOSFET

Analytical model for Transient Current Technique (TCT) signal prediction and analysis for thin interface characterization

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

Global Modeling Strategy of Parasitic Coupled Currents Induced by Minority-Carrier Propagation in Semiconductor Substrates

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

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