UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Solid-state electronics, 2013-04, Vol.82, p.103-110

2013

Volltextzugriff (PDF)

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Journal of instrumentation, 2023-01, Vol.18 (1), p.C01061

2023

Volltextzugriff (PDF)

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

Journal of instrumentation, 2024-02, Vol.19 (2), p.P02024

2024

Volltextzugriff (PDF)

On performance scaling and speed of junctionless transistors

Solid-state electronics, 2013-01, Vol.79, p.18-21

2013

Volltextzugriff (PDF)

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Journal of contemporary physics, 2021-10, Vol.56 (4), p.324-331

2021

Volltextzugriff (PDF)

Role of the gate in ballistic nanowire SOI MOSFETs

Solid-state electronics, 2015-10, Vol.112, p.24-28

2015

Volltextzugriff (PDF)

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2024-08, Vol.1065, p.169497, Article 169497

2024

Volltextzugriff (PDF)

Principle of the electrically induced Transient Current Technique

Journal of instrumentation, 2018-05, Vol.13 (5), p.P05021-P05021

2018

Volltextzugriff (PDF)

A capacitor-less 1T-DRAM cell

IEEE electron device letters, 2002-02, Vol.23 (2), p.85-87

2002

Volltextzugriff (PDF)

Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Organic electronics, 2013-11, Vol.14 (11), p.2756-2761

2013

Volltextzugriff (PDF)

Transient current technique for charged traps detection in silicon bonded interfaces

AIP advances, 2019-02, Vol.9 (2), p.025307-025307-9

2019

Volltextzugriff (PDF)

Explicit Compact Model for Ultranarrow Body FinFETs

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1543-1547

2009

Volltextzugriff (PDF)

New architecture for the analog front-end of Medipix4

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2020-10, Vol.978, p.164412, Article 164412

2020

Volltextzugriff (PDF)

Noise modeling methodologies in the presence of mobility degradation and their equivalence

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.348-355

2006

Volltextzugriff (PDF)

Noise Modeling in Lateral Nonuniform MOSFET

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1994-2001

2007

Volltextzugriff (PDF)

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

Solid-state electronics, 2006-04, Vol.50 (4), p.687-693

2006

Volltextzugriff (PDF)

The ferroelectric MOSFET: a self-consistent quasi-static model and its implications

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2145-2153

2004

Volltextzugriff (PDF)

SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

IEEE sensors journal, 2009-08, Vol.9 (8), p.994-1001

2009

Volltextzugriff (PDF)

Compact modeling of gate sidewall capacitance of DG-MOSFET

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2655-2657

2006

Volltextzugriff (PDF)

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

IEEE transactions on electron devices, 2012-01, Vol.59 (1), p.60-71

2012

Volltextzugriff (PDF)

Analytical model for Transient Current Technique (TCT) signal prediction and analysis for thin interface characterization

Journal of instrumentation, 2016-12, Vol.11 (12), p.C12080-C12080

2016

Volltextzugriff (PDF)

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Journal of instrumentation, 2016-08, Vol.11 (8), p.P08016-P08016, Article P08016

2016

Volltextzugriff (PDF)

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2044-2050

2006

Volltextzugriff (PDF)

Global Modeling Strategy of Parasitic Coupled Currents Induced by Minority-Carrier Propagation in Semiconductor Substrates

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.263-272

2010

Volltextzugriff (PDF)

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.406-417

2003

Volltextzugriff (PDF)

1 – 25 von 99

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(76)
Mit Volltextzugriff
(92)

Publikationsform

Sprache

Englisch
(98)
Deutsch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(73)
Technology
(63)
Physical Sciences
(53)
Physics
(53)
Engineering
(52)
Engineering, Electrical & Electronic
(52)
Physics, Applied
(36)
Exact Sciences And Technology
(35)
Electronics
(29)
Transistors
(29)
Applied Sciences
(27)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(26)
Physics, Condensed Matter
(23)
Mosfet Circuits
(19)
Instruments & Instrumentation
(15)
Materials Science
(15)
Mosfets
(15)
Silicon
(11)
Mosfet
(10)
Devices
(9)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

On performance scaling and speed of junctionless transistors

Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

Role of the gate in ballistic nanowire SOI MOSFETs

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Principle of the electrically induced Transient Current Technique

A capacitor-less 1T-DRAM cell

Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors

Transient current technique for charged traps detection in silicon bonded interfaces

Explicit Compact Model for Ultranarrow Body FinFETs

New architecture for the analog front-end of Medipix4

Noise modeling methodologies in the presence of mobility degradation and their equivalence

Noise Modeling in Lateral Nonuniform MOSFET

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

The ferroelectric MOSFET: a self-consistent quasi-static model and its implications

SOI Pixel Based on a Floating Body Partially Depleted MOSFET in a Delta-Sigma Loop

Compact modeling of gate sidewall capacitance of DG-MOSFET

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Analytical model for Transient Current Technique (TCT) signal prediction and analysis for thin interface characterization

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

Global Modeling Strategy of Parasitic Coupled Currents Induced by Minority-Carrier Propagation in Semiconductor Substrates

Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

Suchergebnisse filtern