UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region

Technical physics letters, 2023-12, Vol.49 (Suppl 2), p.S125-S129

2023

Volltextzugriff (PDF)

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology

Progress in photovoltaics, 2016-09, Vol.24 (9), p.1261-1271

2016

Volltextzugriff (PDF)

Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters

Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.476-483

2020

Volltextzugriff (PDF)

Філософія та література: шлях до діалогу

Granì (Dnìpropetrovsʹk), 2018-07, Vol.21 (6), p.46-50

Salii, A. V.

2018

Volltextzugriff (PDF)

Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1244-1248

2018

Volltextzugriff (PDF)

Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics

Semiconductors (Woodbury, N.Y.), 2024-02, Vol.58 (2), p.191-195

2024

Volltextzugriff (PDF)

Low missing mass, single and double diffraction dissociation at the LHC

Physics of atomic nuclei, 2014-12, Vol.77 (12), p.1463-1474

2014

Volltextzugriff (PDF)

Optimization of photoelectric parameters of InGaAs metamorphic laser (λ=1064 nm) power converters with over 50% efficiency

Solar energy materials and solar cells, 2020-11, Vol.217, p.110710, Article 110710

2020

Volltextzugriff (PDF)

Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.263-266

2024

Volltextzugriff (PDF)

Piezoelectric fields and martensitic transition in spontaneously ordered GaInP2/GaAs epi-layers

Applied physics letters, 2024-01, Vol.124 (5)

2024

Volltextzugriff (PDF)

Temperature tweaking of the output photovoltaic parameters of laser power converters

IEEE electron device letters, 2020-09, Vol.41 (9), p.1-1

2020

Volltextzugriff (PDF)

Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.244-249

2024

Volltextzugriff (PDF)

Piezo-electric fields and state-filling photo-luminescence in natural InP/GaInP2 Wigner molecule structures

Applied physics letters, 2021-03, Vol.118 (12)

2021

Volltextzugriff (PDF)

Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

Crystallography reports, 2024, Vol.69 (4), p.620-628

2024

Volltextzugriff (PDF)

Influence of QD array positioning in GaAs solar cell p-n junction on their photoelectric characteristics

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12192

2021

Volltextzugriff (PDF)

InGaAs metamorphic laser power converters with distributed Bragg reflector for wavelength range λ=1 – 1.1 µm

AIP Conference Proceedings, 2020, Vol.2298 (1)

2020

Volltextzugriff (PDF)

Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate

Technical physics, 2023-12, Vol.68 (12), p.663-667

2023

Volltextzugriff (PDF)

Comparative analysis of the optical and physical properties of InAs and In0.8Ga0.2As quantum dots

Journal of physics. Conference series, 2020, Vol.1697 (1)

2020

Volltextzugriff (PDF)

High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors

Semiconductors (Woodbury, N.Y.), 2023-05, Vol.57 (5), p.252-256

2023

Volltextzugriff (PDF)

Selective Area Epitaxy of InP/GaInP2Quantum Dots from Metal-Organic Compounds

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (2), p.187-190

2024

Volltextzugriff (PDF)

Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy

Technical physics letters, 2023-12, Vol.49 (Suppl 3), p.S163-S167

2023

Volltextzugriff (PDF)

High-Efficiency GaInP/GaAs Photoconverters of the 600 nm Laser Line

Technical physics letters, 2023-12, Vol.49 (Suppl 2), p.S75-S77

2023

Volltextzugriff (PDF)

A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm

Technical physics letters, 2023-12, Vol.49 (Suppl 2), p.S78-S80

2023

Volltextzugriff (PDF)

Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p-InP

Technical physics letters, 2020-12, Vol.46 (12), p.1167-1169

2020

Volltextzugriff (PDF)

Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1267-1275

2020

Volltextzugriff (PDF)

1 – 25 von 282

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(215)
Mit Volltextzugriff
(156)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(98)
Physical Sciences
(80)
Physics
(69)
Physics And Astronomy
(30)
Gallium Arsenide
(26)
Physics, Applied
(25)
Quantum Dots
(25)
Technology
(23)
Solar Cells
(20)
Physics, Condensed Matter
(18)
Indium Gallium Arsenides
(17)
Materials Science
(17)
Photovoltaic Cells
(16)
Astronomy & Astrophysics
(15)
Heterostructures
(15)
Humans
(14)
Magnetic Materials
(14)
Magnetism
(14)
Photoluminescence
(14)
Metalorganic Chemical Vapor Deposition
(13)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology

Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters

Філософія та література: шлях до діалогу

Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities

Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics

Low missing mass, single and double diffraction dissociation at the LHC

Optimization of photoelectric parameters of InGaAs metamorphic laser (λ=1064 nm) power converters with over 50% efficiency

Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs

Piezoelectric fields and martensitic transition in spontaneously ordered GaInP2/GaAs epi-layers

Temperature tweaking of the output photovoltaic parameters of laser power converters

Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots

Piezo-electric fields and state-filling photo-luminescence in natural InP/GaInP2 Wigner molecule structures

Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

Influence of QD array positioning in GaAs solar cell p-n junction on their photoelectric characteristics

InGaAs metamorphic laser power converters with distributed Bragg reflector for wavelength range λ=1 – 1.1 µm

Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate

Comparative analysis of the optical and physical properties of InAs and In0.8Ga0.2As quantum dots

High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors

Selective Area Epitaxy of InP/GaInP2Quantum Dots from Metal-Organic Compounds

Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy

High-Efficiency GaInP/GaAs Photoconverters of the 600 nm Laser Line

A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm

Electrical Contacts to InP-based Structures with a Zn-doped Subcontact Layer to p-InP

Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them

Suchergebnisse filtern