UB Paderborn / Katalog / Suche / in CDI

Progress in scale-up of second-generation high-temperature superconductors at SuperPower Inc

Physica. C, Superconductivity, 2005-10, Vol.426-431, p.849-857

2005

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Scale up of applications-ready practical Y-Ba-Cu-O coated conductors

IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.2596-2599

2005

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Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

Journal of electronic materials, 1997-03, Vol.26 (3), p.243-251

1997

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High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor

Journal of the Electrochemical Society, 1995-09, Vol.142 (9), p.L163-L165

1995

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Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1995-05, Vol.13 (3), p.672-675

1995

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ZnO thin films synthesized by chemical vapor deposition

2010 IEEE Long Island Systems, Applications and Technology Conference, 2010, p.1-6

2010

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Structural properties of GaN grown by MOVPE turbodisc mass-production reactor

Journal of crystal growth, 1997-04, Vol.174 (1), p.647-652

1997

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ZnO nanostructures epitaxially grown on ZnO seeded Si (100) substrates by chemical vapor deposition

MRS proceedings, 2009, Vol.1178 (1), p.69-73, Article 1178-AA06-21

2009

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ZnO Thin Film Deposition on Sapphire Substrates by Chemical Vapor Deposition

MRS proceedings, 2009, Vol.1167 (1), Article 1167-O07-09

2009

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Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope

Materials science forum, 1998-02, Vol.264-268, p.1359-1362

1998

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Effect of shroud flow on high quality InxGa1-xN deposition in a production scale multi-wafer-rotating-disc reactor

Journal of electronic materials, 1996-05, Vol.25 (4), p.749-753

1996

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Two-photon absorption induced photoluminescence in a ZnO nanostructure

MRS proceedings, 2009, Vol.1178 (1), p.98-103

2009

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Ga In N ∕ Ga N growth optimization for high-power green light-emitting diodes

Applied physics letters, 2004-08, Vol.85 (6), p.866-868

2004

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Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materials

Materials science & engineering. B, Solid-state materials for advanced technology, 1995-12, Vol.35 (1), p.97-101

1995

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MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk

Journal of crystal growth, 1991, Vol.107 (1), p.198-202

1991

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Investigation of n - and p -type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1995-09, Vol.13 (5), p.2075-2080

1995

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Progress in scale-up of second-generation high-temperature superconductors at SuperPower Inc

Physica. C. Superconductivity, 2005, Vol.426-31, p.849-857

2005

Volltextzugriff (PDF)

Effect of structural defects and chemical impurities on Hall mobilities in low pressure MOCVD grown GaN: III-V Nitrides and silicon carbide

Journal of electronic materials, 1997, Vol.26 (3), p.243-251

1997

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Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride

MRS proceedings, 1995, Vol.395, Article 369

1995

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The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e24

1996

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Structural properties of GaN grown by MOVPE turbodisc mass-production reactor : Vapor growth and epitaxy 1996

Journal of crystal growth, 1997, Vol.174 (1-4), p.647-652

1997

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Spectral reflectivity monitoring of GaN growth

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application, 1997, p.49

1997

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Phase separation in bulk InGaN and quantum wells grown by low pressure MOCVD

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application, 1997, p.29-30

1997

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MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating disk

Journal of crystal growth, 1990, Vol.107 (1-4), p.198-202

1990

Volltextzugriff (PDF)

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Progress in scale-up of second-generation high-temperature superconductors at SuperPower Inc

Scale up of applications-ready practical Y-Ba-Cu-O coated conductors

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor

Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition

ZnO thin films synthesized by chemical vapor deposition

Structural properties of GaN grown by MOVPE turbodisc mass-production reactor

ZnO nanostructures epitaxially grown on ZnO seeded Si (100) substrates by chemical vapor deposition

ZnO Thin Film Deposition on Sapphire Substrates by Chemical Vapor Deposition

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope

Effect of shroud flow on high quality InxGa1-xN deposition in a production scale multi-wafer-rotating-disc reactor

Two-photon absorption induced photoluminescence in a ZnO nanostructure

Ga In N ∕ Ga N growth optimization for high-power green light-emitting diodes

Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materials

MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk

Investigation of n - and p -type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor

Progress in scale-up of second-generation high-temperature superconductors at SuperPower Inc

Effect of structural defects and chemical impurities on Hall mobilities in low pressure MOCVD grown GaN: III-V Nitrides and silicon carbide

Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride

The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor

The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor

Structural properties of GaN grown by MOVPE turbodisc mass-production reactor : Vapor growth and epitaxy 1996

Spectral reflectivity monitoring of GaN growth

Phase separation in bulk InGaN and quantum wells grown by low pressure MOCVD

MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating disk

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