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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Applied physics letters, 2019-09, Vol.115 (14)

Bockowski, Michal

2019

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Progress on and challenges of p-type formation for GaN power devices

Journal of applied physics, 2020-09, Vol.128 (9)

2020

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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Journal of applied physics, 2020-03, Vol.127 (10)

2020

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Mg-implanted bevel edge termination structure for GaN power device applications

Applied physics letters, 2021-03, Vol.118 (9)

2021

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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

physica status solidi (b), 2022-10, Vol.259 (10), p.n/a

2022

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High Pressure Processing of Ion Implanted GaN

Electronics (Basel), 2020-09, Vol.9 (9), p.1380

2020

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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Journal of applied physics, 2022-05, Vol.131 (18)

2022

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Journal of applied physics, 2022-08, Vol.132 (6)

2022

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X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN

Japanese Journal of Applied Physics, 2021-03, Vol.60 (3), p.36503

2021

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Amphiphilic polysilane-methacrylate block copolymers: Formation and interesting properties

Proceedings of the Japan Academy, Series B, 2006, Vol.82(8), pp.257-269

SAKURAI, Hideki

2006

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Preparation of Nanometer-Sized Hollow Particles by Photochemical Degradation of Polysilane Shell Cross-Linked Micelles and Reversible Encapsulation of Guest Molecules

Macromolecules, 2000-11, Vol.33 (23), p.8524-8526

2000

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Helical-Sense Programming through Polysilane-Poly(triphenylmethyl methacrylate) Block Copolymers

Journal of the American Chemical Society, 2001-12, Vol.123 (50), p.12690-12691

2001

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Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Scientific reports, 2020-10, Vol.10 (1), p.17349-17349, Article 17349

2020

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Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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Induction of optical activity in oligosilanes within the internal cavity of cyclodextrins

Chemical communications (Cambridge, England), 2003-01 (13), p.1506-1507

2003

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Synthesis and pharmacological profile of serofendic acids A and B

Bioorganic & medicinal chemistry, 2007-11, Vol.15 (22), p.7098-7107

2007

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Effect of the chiral center position of an optically active terminal group on the induction of optical activity in polysilanes

Polymer bulletin (Berlin, Germany), 2007-09, Vol.59 (2), p.169-175

2007

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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

physica status solidi (b), 2022-10, Vol.259 (10), p.n/a

2022

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Consecutive disilanylsilylene to silyldisilene rearrangements

Journal of organometallic chemistry, 2006-03, Vol.691 (6), p.1169-1174

2006

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Polysilane-silica hybrid nanoparticles

Polymer journal, 2005, Vol.37 (1), p.1-6

2005

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Cyclotrigermenes: A New Unsaturated Ring System

Journal of the American Chemical Society, 1995-08, Vol.117 (30), p.8025-8026

1995

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Chemistry of organosilicon compounds. 292. An NMR study of the formation of silyloxonium ions by using tetrakis[3,5-bis(trifluoromethyl)phenyl]borate as counteranion

Journal of the American Chemical Society, 1992-08, Vol.114 (17), p.6697-6700

1992

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Chemistry of organosilicon compounds. 303. The missing hexasilaprismane: synthesis, x-ray analysis and photochemical reactions

Journal of the American Chemical Society, 1993-06, Vol.115 (13), p.5853-5854

1993

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Stable Tetrakis(trialkylsilyl)disilenes; Synthesis, X-Ray Structures, and UV/VIS Spectra

Angewandte Chemie (International ed.), 1994-08, Vol.33 (14), p.1489-1491

1994

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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Progress on and challenges of p-type formation for GaN power devices

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Mg-implanted bevel edge termination structure for GaN power device applications

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

High Pressure Processing of Ion Implanted GaN

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN

Amphiphilic polysilane-methacrylate block copolymers: Formation and interesting properties

Preparation of Nanometer-Sized Hollow Particles by Photochemical Degradation of Polysilane Shell Cross-Linked Micelles and Reversible Encapsulation of Guest Molecules

Helical-Sense Programming through Polysilane-Poly(triphenylmethyl methacrylate) Block Copolymers

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Induction of optical activity in oligosilanes within the internal cavity of cyclodextrins

Synthesis and pharmacological profile of serofendic acids A and B

Effect of the chiral center position of an optically active terminal group on the induction of optical activity in polysilanes

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Consecutive disilanylsilylene to silyldisilene rearrangements

Polysilane-silica hybrid nanoparticles

Cyclotrigermenes: A New Unsaturated Ring System

Chemistry of organosilicon compounds. 292. An NMR study of the formation of silyloxonium ions by using tetrakis[3,5-bis(trifluoromethyl)phenyl]borate as counteranion

Chemistry of organosilicon compounds. 303. The missing hexasilaprismane: synthesis, x-ray analysis and photochemical reactions

Stable Tetrakis(trialkylsilyl)disilenes; Synthesis, X-Ray Structures, and UV/VIS Spectra

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