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11 T liquid helium-free superconducting magnet

Cryogenics (Guildford), 1996, Vol.36 (12), p.1019-1025

1996

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Absorbed dose simulations in near-surface regions using high dose rate Iridium-192 sources applied for brachytherapy

Radiation physics and chemistry (Oxford, England : 1993), 2014-02, Vol.95, p.299-301

2014

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Advances in the first cryogen-free hybrid magnet

IEEE transactions on applied superconductivity, 2004-06, Vol.14 (2), p.388-392

2004

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ALK receptor tyrosine kinase promotes cell growth and neurite outgrowth

Journal of cell science, 2004-07, Vol.117 (Pt 15), p.3319-3329

2004

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Anisotropic magnetoresistance in Co 2 (Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (2), Article 020409

2012

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Anisotropic magnetoresistance in Co sub(2)(Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (2)

2012

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Application for ball grid array package by using high heat resistant substrate (BN300)

Nineteenth IEEE/CPMT International Electronics Manufacturing Technology Symposium, 1996, p.70-74

1996

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Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Applied surface science, 2004-03, Vol.224 (1), p.210-214

2004

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Association between the stress fracture and bone metabolism/quality markers in lacrosse players

Open access journal of sports medicine, 2012-01, Vol.3 (default), p.67-71

2012

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Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

Applied surface science, 2000-08, Vol.162-163, p.390-394

2000

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Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3using an ultraclean low-pressure chemical vapor deposition

Applied surface science, 2000, Vol.162-63, p.390-394

2000

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Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD

Le Journal de Physique IV, 1995-06, Vol.5 (C5), p.C5-C5-1108

1995

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Atomic-layer doping in Si by alternately supplied NH3 and SiH4

Applied physics letters, 2003-05, Vol.82 (20), p.3472-3474

2003

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Atomic-layer doping in Si by alternately supplied PH 3 and SiH 4

Thin solid films, 2000, Vol.380 (1), p.134-136

2000

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Atomic-layer doping in Si by alternately supplied PH sub(3) and SiH sub(4)

Thin solid films, 2000-12, Vol.380 (1-2), p.134-136

2000

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Atomic-layer doping in Si by alternately supplied PH3 and SiH4

Thin solid films, 2000-12, Vol.380 (1-2), p.134-136

2000

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Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases

Applied surface science, 1994-12, Vol.82-83 (1-4), p.354-358

1994

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Atomic layer epitaxy of germanim on silicon using flash heating chemical vapor deposition

Journal of crystal growth, 1991, Vol.115 (1-4), p.79-82

1991

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Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition

Journal of crystal growth, 1991-12, Vol.115 (1), p.79-82

1991

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Atomic-layer surface reaction of SiH4 on Ge(100)

Japanese journal of applied physics, 1997, Vol.36 (6B), p.4042-4045

1997

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Atomic level interface structure of InP/InPAs/InP measured by X-ray crystal truncation rod scattering

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.148-152

1995

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Atomic-Order Thermal Nitridation of Si 1-x Ge x (100) at Low Temperatures by NH 3

ECS transactions, 2006-10, Vol.3 (7), p.1205-1210

2006

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Atomic-order thermal nitridation of Si(100) and subsequent growth of Si

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.1907-1911

2001

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Atomic-Order Thermal Nitridation of Si1-xGex(100) at Low Temperatures by NH3

Meeting abstracts (Electrochemical Society), 2006-06, Vol.MA2006-02 (31), p.1522-1522

2006

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Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures

Journal of the Electrochemical Society, 1998-12, Vol.145 (12), p.4252-4256

1998

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11 T liquid helium-free superconducting magnet

Absorbed dose simulations in near-surface regions using high dose rate Iridium-192 sources applied for brachytherapy

Advances in the first cryogen-free hybrid magnet

ALK receptor tyrosine kinase promotes cell growth and neurite outgrowth

Anisotropic magnetoresistance in Co 2 (Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity

Anisotropic magnetoresistance in Co sub(2)(Fe,Mn)Si Heusler epitaxial films: A fingerprint of half-metallicity

Application for ball grid array package by using high heat resistant substrate (BN300)

Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Association between the stress fracture and bone metabolism/quality markers in lacrosse players

Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3using an ultraclean low-pressure chemical vapor deposition

Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD

Atomic-layer doping in Si by alternately supplied NH3 and SiH4

Atomic-layer doping in Si by alternately supplied PH 3 and SiH 4

Atomic-layer doping in Si by alternately supplied PH sub(3) and SiH sub(4)

Atomic-layer doping in Si by alternately supplied PH3 and SiH4

Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases

Atomic layer epitaxy of germanim on silicon using flash heating chemical vapor deposition

Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition

Atomic-layer surface reaction of SiH4 on Ge(100)

Atomic level interface structure of InP/InPAs/InP measured by X-ray crystal truncation rod scattering

Atomic-Order Thermal Nitridation of Si 1-x Ge x (100) at Low Temperatures by NH 3

Atomic-order thermal nitridation of Si(100) and subsequent growth of Si

Atomic-Order Thermal Nitridation of Si1-xGex(100) at Low Temperatures by NH3

Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures

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