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Hot-hole-induced negative oxide charges in n-MOSFETs

IEEE transactions on electron devices, 1995-08, Vol.42 (8), p.1473-1480

1995

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A semi-empirical model for electron mobility at the SiC/SiO2 interface

MRS proceedings, 2002, Vol.742

Saks, Nelson S.

2002

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10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

IEEE electron device letters, 2002-06, Vol.23 (6), p.321-323

2002

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A semi-empirical model for electron mobility at the SiC/SiO 2 interface

MRS proceedings, 2002, Vol.742, Article K4.8

Saks, Nelson S.

2002

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Oxide and interface degradation resulting from substrate hot-hole injection in metal-oxide-semiconductor field-effect transistors at 295 and 77 K

Journal of applied physics, 1994-02, Vol.75 (4), p.2073-2080

1994

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Investigation of the charge pumping current in metal-oxide-semiconductor structures

Journal of applied physics, 1989-06, Vol.65 (11), p.4311-4318

1989

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A time domain analysis of the charge pumping current

Journal of applied physics, 1988-11, Vol.64 (9), p.4751-4754

1988

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Determination of interface trap capture cross sections using three-level charge pumping

IEEE electron device letters, 1990-08, Vol.11 (8), p.339-341

1990

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Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2662-2666

2002

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Lateral distribution of hot-carrier-induced interface traps in MOSFETs

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2221-2228

1988

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Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Materials science forum, 2002-04, Vol.389-393, p.1195-1198

2002

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Hot-hole-induced negative oxide charges in n-MOSFETs

Proceedings of 1994 IEEE International Electron Devices Meeting, 1994, p.311-314

1994

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Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

IEEE transactions on nuclear science, 1986-12, Vol.33 (6), p.1185-1190

1986

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Spatial uniformity of interface trap distribution in MOSFETs

IEEE transactions on electron devices, 1990-04, Vol.37 (4), p.1057-1063

1990

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Design and Process Issues for Silicon Carbide Power DiMOSFETS

MRS proceedings, 2000, Vol.640, Article H4.5

2000

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Status of SiC power devices at Northrop Grumman

Diamond and related materials, 1999-03, Vol.8 (2), p.295-301

1999

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Response of MNOS Capacitors to Ionizing Radiation at 80°k

IEEE transactions on nuclear science, 1978-12, Vol.25 (6), p.1226-1232

Saks, Nelson S.

1978

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Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

IEEE transactions on electron devices, 1986-10, Vol.33 (10), p.1529-1534

1986

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Interface state trapping and dark current generation in buried-channel charge-coupled devices

Journal of applied physics, 1982-03, Vol.53 (3), p.1745-1753

Saks, Nelson S.

1982

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Fabrication of surface-channel charge-coupled devices with ultralow density of interface states

Applied physics letters, 1982-01, Vol.41 (8), p.737-739

Saks, Nelson S.

1982

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A New Technique for Hardening CCD Imagers by Suppression of Interface State Generation

IEEE transactions on nuclear science, 1980-01, Vol.27 (6), p.1727-1734

Saks, Nelson S.

1980

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Charge transfer in a p-surface channel CCD as a function of bias charge

IEEE transactions on electron devices, 1981-05, Vol.28 (5), p.599-601

Saks, N.S.

1981

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Reduction of interface state density in MNOS capacitors by Hydrogen implantation

1981 International Electron Devices Meeting, 1981, p.710-711

Saks, N.S.

1981

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27 mΩl-cm2, 1.6 kV power DiMOSFETs in 4H-SiC

2002

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Optical and electrical properties of boron-implanted amorphous germanium thin films

Journal of applied physics, 1974-01, Vol.45 (10), p.4528-4533

1974

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Hot-hole-induced negative oxide charges in n-MOSFETs

A semi-empirical model for electron mobility at the SiC/SiO2 interface

10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

A semi-empirical model for electron mobility at the SiC/SiO 2 interface

Oxide and interface degradation resulting from substrate hot-hole injection in metal-oxide-semiconductor field-effect transistors at 295 and 77 K

Investigation of the charge pumping current in metal-oxide-semiconductor structures

A time domain analysis of the charge pumping current

Determination of interface trap capture cross sections using three-level charge pumping

Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation

Lateral distribution of hot-carrier-induced interface traps in MOSFETs

Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Hot-hole-induced negative oxide charges in n-MOSFETs

Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

Spatial uniformity of interface trap distribution in MOSFETs

Design and Process Issues for Silicon Carbide Power DiMOSFETS

Status of SiC power devices at Northrop Grumman

Response of MNOS Capacitors to Ionizing Radiation at 80°k

Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

Interface state trapping and dark current generation in buried-channel charge-coupled devices

Fabrication of surface-channel charge-coupled devices with ultralow density of interface states

A New Technique for Hardening CCD Imagers by Suppression of Interface State Generation

Charge transfer in a p-surface channel CCD as a function of bias charge

Reduction of interface state density in MNOS capacitors by Hydrogen implantation

27 mΩl-cm2, 1.6 kV power DiMOSFETs in 4H-SiC

Optical and electrical properties of boron-implanted amorphous germanium thin films

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