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Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

Applied physics letters, 2000-11, Vol.77 (20), p.3281-3283

2000

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Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

Applied physics letters, 2000-04, Vol.76 (16), p.2250-2252

2000

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High temperature high-dose implantation of aluminum in 4H-SiC

Applied physics letters, 2004-06, Vol.84 (25), p.5195-5197

2004

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Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

Journal of applied physics, 1996-02, Vol.79 (3), p.1583-1594

1996

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Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Applied physics letters, 2002-04, Vol.80 (17), p.3219-3221

2002

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Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field

Journal of applied physics, 1991-10, Vol.70 (7), p.3734-3747

1991

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Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

Applied physics letters, 2000-09, Vol.77 (10), p.1437-1439

2000

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Low-dose aluminum and boron implants in 4H and 6H silicon carbide

Journal of applied physics, 2001-09, Vol.90 (6), p.2796-2805

2001

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Low-dose n -type nitrogen implants in 4H-SiC

Applied physics letters, 2002-12, Vol.81 (26), p.4958-4960

2002

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10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

IEEE electron device letters, 2002-06, Vol.23 (6), p.321-323

2002

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Hall Effect Measurements in SiC Buried-Channel MOS Devices

Materials science forum, 2004-01, Vol.457-460, p.1287-1292

2004

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Measurement of single interface trap capture cross sections with charge pumping

Applied physics letters, 1997-06, Vol.70 (25), p.3380-3382

Saks, N. S.

1997

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A 475-V high-voltage 6H-SiC lateral MOSFET

IEEE electron device letters, 1999-08, Vol.20 (8), p.431-433

1999

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Interface trap formation via the two-stage H(+) process

IEEE transactions on nuclear science, 1989-12, Vol.36 (6), p.1848-1857

1989

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Lateral distribution of hot-carrier-induced interface traps in MOSFETs

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2221-2228

1988

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Centripetal transport of herpes simplex virus in human retinal pigment epithelial cells in vitro

Neuroscience, 1996-04, Vol.71 (4), p.1133-1144

1996

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Determination of interface trap capture cross sections using three-level charge pumping

IEEE electron device letters, 1990-08, Vol.11 (8), p.339-341

1990

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Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

Materials science forum, 2004-01, Vol.457-460, p.689-692

2004

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Hot-hole-induced negative oxide charges in n-MOSFETs

IEEE transactions on electron devices, 1995-08, Vol.42 (8), p.1473-1480

1995

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Resolving the Uncertainty of Preterm Symptoms: Women's Experiences With the Onset of Preterm Labor

Journal of obstetric, gynecologic, and neonatal nursing, 2002-01, Vol.31 (1), p.66-76

2002

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Observation of H+ motion during interface trap formation

IEEE transactions on nuclear science, 1990-12, Vol.37 (6), p.1624-1631

1990

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The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides (n-MOSFET)

IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.2220-2229

1992

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Time dependence of interface trap formation in MOSFETs following pulsed irradiation

IEEE transactions on nuclear science, 1988-12, Vol.35 (6), p.1168-1177

1988

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Comparison of interface trap densities measured by the Jenq and charge pumping techniques

Journal of applied physics, 1993-09, Vol.74 (5), p.3303-3306

SAKS, N. S

1993

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Characterization of individual interface traps with charge pumping

Applied physics letters, 1996-03, Vol.68 (10), p.1383-1385

1996

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Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

High temperature high-dose implantation of aluminum in 4H-SiC

Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field

Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

Low-dose aluminum and boron implants in 4H and 6H silicon carbide

Low-dose n -type nitrogen implants in 4H-SiC

10 A, 2.4 kV Power DiMOSFETs in 4H-SiC

Hall Effect Measurements in SiC Buried-Channel MOS Devices

Measurement of single interface trap capture cross sections with charge pumping

A 475-V high-voltage 6H-SiC lateral MOSFET

Interface trap formation via the two-stage H(+) process

Lateral distribution of hot-carrier-induced interface traps in MOSFETs

Centripetal transport of herpes simplex virus in human retinal pigment epithelial cells in vitro

Determination of interface trap capture cross sections using three-level charge pumping

Anomalous behavior of van der Pauw sheet resistance measurements on 4H-SiC MOS inversion layers with anisotropic mobility

Hot-hole-induced negative oxide charges in n-MOSFETs

Resolving the Uncertainty of Preterm Symptoms: Women's Experiences With the Onset of Preterm Labor

Observation of H+ motion during interface trap formation

The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides (n-MOSFET)

Time dependence of interface trap formation in MOSFETs following pulsed irradiation

Comparison of interface trap densities measured by the Jenq and charge pumping techniques

Characterization of individual interface traps with charge pumping

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