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Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries

Applied physics letters, 2019-02, Vol.114 (8)

2019

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High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

Materials science forum, 2010-04, Vol.645-648, p.13-16

2010

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Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching

Materials science forum, 2011-03, Vol.679-680, p.294-297

2011

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Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4R), p.41301

2012

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Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.041301-041301-4

2012

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A lithium-ion conductive Li1.5Al0.25Ga0.25Ti1.5(PO4)3 solid electrolyte for electrochemical device

Solid state ionics, 2020-03, Vol.346, p.115212, Article 115212

2020

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Real-time high-spectral-resolution mid-infrared spectroscopy with a signal-to-noise ratio of ten thousand

Optics express, 2022-09, Vol.30 (20), p.36813-36825

2022

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Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2004-07, Vol.43 (7B), p.L969

2004

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Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Jpn J Appl Phys, 2011-07, Vol.50 (7), p.075502-075502-7

2011

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A simultaneous observation of dislocations in 4 H -SiC epilayer and n + -substrate by using electron beam induced current

Journal of applied physics, 2011-06, Vol.109 (12), p.123524-123524-5

2011

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Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy

Applied physics letters, 1997-04, Vol.70 (14), p.1852-1854

1997

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Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive

Materials science forum, 2011, Vol.679-680, p.290-293

2011

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Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition

Materials science forum, 2006-10, Vol.527-529, p.223-226

2006

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Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation

Materials science forum, 2007-01, Vol.556-557, p.659-662

2007

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Evaluation Methods for Corrosion Damage of Components in Cooling Systems of Nuclear Power Plants by Coupling Analysis of Corrosion and Flow Dynamics (I): Major Targets and Development Strategies of the Evaluation Methods

Journal of nuclear science and technology, 2008-11, Vol.45 (11), p.1116-1128

2008

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4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

Materials Science Forum, 2005-01, Vol.483-485, p.89-92

2005

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Molten KOH Etching with Na 2 O 2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7R), p.75502

2011

Volltextzugriff (PDF)

Molten KOH Etching with Na 2 O 2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Japanese Journal of Applied Physics, 2011-07, Vol.50 (7R), p.75502

2011

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A Comprehensive Comparison between Locations of Orthologs in Circular Microbial Genomes

Genome Informatics, 2000, Vol.11, pp.333-334

2000

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Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

Materials science forum, 2004-01, Vol.457-460, p.997-1000

2004

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Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Materials science forum, 2010-01, Vol.645-648, p.351-354

2010

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Simulation Study for Artifacts on Gd-EOB-DTPA-enhanced Liver Dynamic MR Imaging in Arterial Dominant Phase

Japanese Journal of Radiological Technology, 2010/09/20, Vol.66(9), pp.1197-1203

2010

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Evaluation Method for Flow Accelerated Corrosion of Components by Corrosion Analysis Coupled with Flow Dynamics Analysis

Heat transfer engineering, 2008-08, Vol.29 (8), p.712-720

2008

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Evaluation Methods for Corrosion Damage of Components in Cooling Systems of Nuclear Power Plants by Coupling Analysis of Corrosion and Flow Dynamics (I): Major Targets and Development Strategies of the Evaluation Methods

Journal of nuclear science and technology, 2008-11, Vol.45 (11), p.1116-1128

2008

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Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD

Materials science forum, 2003-09, Vol.433-436, p.185-188

2003

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Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching

Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate

Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate

A lithium-ion conductive Li1.5Al0.25Ga0.25Ti1.5(PO4)3 solid electrolyte for electrochemical device

Real-time high-spectral-resolution mid-infrared spectroscopy with a signal-to-noise ratio of ten thousand

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

A simultaneous observation of dislocations in 4 H -SiC epilayer and n + -substrate by using electron beam induced current

Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive

Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition

Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation

Evaluation Methods for Corrosion Damage of Components in Cooling Systems of Nuclear Power Plants by Coupling Analysis of Corrosion and Flow Dynamics (I): Major Targets and Development Strategies of the Evaluation Methods

4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

Molten KOH Etching with Na 2 O 2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Molten KOH Etching with Na 2 O 2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

A Comprehensive Comparison between Locations of Orthologs in Circular Microbial Genomes

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Simulation Study for Artifacts on Gd-EOB-DTPA-enhanced Liver Dynamic MR Imaging in Arterial Dominant Phase

Evaluation Method for Flow Accelerated Corrosion of Components by Corrosion Analysis Coupled with Flow Dynamics Analysis

Evaluation Methods for Corrosion Damage of Components in Cooling Systems of Nuclear Power Plants by Coupling Analysis of Corrosion and Flow Dynamics (I): Major Targets and Development Strategies of the Evaluation Methods

Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD

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