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Processes of Current Transport in p-Si-n-(Si2)1−y−z(GaP)y(ZnSe)z Heterostructure Produced by Liquid Phase Epitaxy

e-Journal of Surface Science and Nanotechnology, 2022/12/03, Vol.21(1), pp.55-60

2022

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Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

Applied solar energy, 2020-05, Vol.56 (3), p.178-185

2020

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Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x0≤x≤1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

Advances in condensed matter physics, 2021, Vol.2021

2021

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Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals

Advances in materials science and engineering, 2019, Vol.2019 (2019), p.1-9

2019

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Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

Crystallography reports, 2022, Vol.67 (2), p.301-305

2022

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Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge 2 )y(ZnSe)z and their photoelectric properties

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2023-06, Vol.37 (14)

2023

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Structural Features of the Epitaxial Layer of the (GaAs)1−y−z(Ge2)y(ZnSe)z Solid Solution Grown from a Bismuth Solution Melt

e-Journal of Surface Science and Nanotechnology, 2024/04/04, Vol.22(3), pp.194-198

2024

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Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

Applied solar energy, 2023-08, Vol.59 (4), p.400-409

2023

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Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

Physical sciences and technology, 2023-06, Vol.10 (1)

2023

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Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

SILICON, 2024-06, Vol.16 (9), p.4091-4097

2024

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Influence of interferon types on COVID-19 prevention and treatment

Vestnik medit͡s︡inskogo instituta Reaviz, 2021-10, Vol.11 (5), p.17-22

2021

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Synthesis of neuroregulator of power in system of sensorless traction electric drive

Omskij naučnyj vestnik, 2021-04 (176), p.31-35

2021

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Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

Surface investigation, x-ray, synchrotron and neutron techniques, 2021, Vol.15 (1), p.94-99

2021

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Surgical methods for the correction of erectile dysfunction

Vestnik medit͡s︡inskogo instituta Reaviz, 2022-05, Vol.12 (2), p.111-118

2022

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Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

Semiconductors (Woodbury, N.Y.), 2018-09, Vol.52 (9), p.1188-1192

2018

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Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

Applied solar energy, 2019-09, Vol.55 (5), p.291-308

2019

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Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

Applied solar energy, 2019-09, Vol.55 (5), p.265-268

2019

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Photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures with quantum dots

Applied solar energy, 2017-10, Vol.53 (4), p.287-290

2017

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Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)

Applied solar energy, 2015-07, Vol.51 (3), p.183-194

2015

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Dynamics of chromosome variation in mole voles Ellobius tancrei (Mammalia, Rodentia) in Pamiro-Alay in the period from 1982 to 2008

Russian journal of genetics, 2010-05, Vol.46 (5), p.566-571

2010

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Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films

Semiconductors (Woodbury, N.Y.), 2016, Vol.50 (1), p.59-65

2016

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Study of GaSb doped with Te as a material for photovoltaic systems

Applied solar energy, 2015-04, Vol.51 (2), p.117-119

2015

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Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots

Applied solar energy, 2015-07, Vol.51 (3), p.206-208

2015

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Study of properties of tellurium-doped indium phosphide as photoconversion material

Applied solar energy, 2014-07, Vol.50 (3), p.143-145

2014

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Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

Journal of crystal growth, 2023-06, Vol.612, p.127203, Article 127203

2023

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Processes of Current Transport in p-Si-n-(Si2)1−y−z(GaP)y(ZnSe)z Heterostructure Produced by Liquid Phase Epitaxy

Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x0≤x≤1 Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals

Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge 2 )y(ZnSe)z and their photoelectric properties

Structural Features of the Epitaxial Layer of the (GaAs)1−y−z(Ge2)y(ZnSe)z Solid Solution Grown from a Bismuth Solution Melt

Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

Influence of interferon types on COVID-19 prevention and treatment

Synthesis of neuroregulator of power in system of sensorless traction electric drive

Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

Surgical methods for the correction of erectile dysfunction

Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

Photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures with quantum dots

Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)

Dynamics of chromosome variation in mole voles Ellobius tancrei (Mammalia, Rodentia) in Pamiro-Alay in the period from 1982 to 2008

Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films

Study of GaSb doped with Te as a material for photovoltaic systems

Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y structures with quantum dots

Study of properties of tellurium-doped indium phosphide as photoconversion material

Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

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