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When are transmission-line effects important for on-chip interconnections?

IEEE transactions on microwave theory and techniques, 1997-10, Vol.45 (10), p.1836-1846

1997

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A new semiconductor superlattice

Applied physics letters, 1977-06, Vol.30 (12), p.651-653

1977

Volltextzugriff (PDF)

VLSI on-chip interconnection performance simulations and measurements

IBM journal of research and development, 1995-07, Vol.39 (4), p.383-401

1995

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Performance trends in high-end processors

Proceedings of the IEEE, 1995-01, Vol.83 (1), p.20-36

Sai-Halasz, G.A.

1995

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High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

IEEE electron device letters, 1988-09, Vol.9 (9), p.464-466

1988

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Observation of semiconductor-semimetal transition in InAs-GaSb superlattices

Applied physics letters, 1979-12, Vol.35 (12), p.939-942

1979

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Design and experimental technology for 0.1-μm gate-length low-temperature operation FET's

IEEE electron device letters, 1987, Vol.8 (10), p.463-466

1987

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Effects of Quantum States on the Photocurrent in a "Superlattice"

Physical review letters, 1975-06, Vol.34 (24), p.1509-1512

1975

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Effects of Dynamic External Pair Breaking in Superconducting Films

Physical review letters, 1974-07, Vol.33 (4), p.215-219

1974

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Spreading resistance in submicron MOSFET's

IEEE electron device letters, 1983-02, Vol.4 (2), p.27-29

1983

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Stress-relieved regrowth of silicon on sapphire by laser annealing

Applied physics letters, 1980-03, Vol.36 (6), p.419-422

1980

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Device-grade ultra-shallow junctions fabricated with antimony

IEEE electron device letters, 1986-09, Vol.7 (9), p.534-536

1986

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Frequency-dependent crosstalk simulation for on-chip interconnections

IEEE transactions on advanced packaging, 1999-08, Vol.22 (3), p.292-308

1999

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Influence of an electric field on beam-induced adhesion enhancement

Applied physics letters, 1984-01, Vol.45 (10), p.1067-1069

1984

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Inverter performance of deep-submicrometer MOSFETs

IEEE electron device letters, 1988-12, Vol.9 (12), p.633-635

1988

Volltextzugriff (PDF)

Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2

Applied physics letters, 1986-01, Vol.48 (2), p.177-179

1986

Volltextzugriff (PDF)

Cosmic ray induced soft error rate in VLSI circuits

IEEE electron device letters, 1983-06, Vol.4 (6), p.172-174

Sai-Halasz, G.A.

1983

Volltextzugriff (PDF)

In1-xGaxAs/GaSb1-yAsy Heterojunctions by Molecular Beam Epitaxy

Applied physics letters, 1977-01, Vol.31 (3), p.211-213

1977

Volltextzugriff (PDF)

Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits

IEEE electron device letters, 1980-10, Vol.1 (10), p.211-213

1980

Volltextzugriff (PDF)

Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing

Applied physics letters, 1987-09, Vol.51 (13), p.992-994

1987

Volltextzugriff (PDF)

Stability and SER analysis of static RAM cells

IEEE transactions on electron devices, 1985-02, Vol.32 (2), p.463-470

1985

Volltextzugriff (PDF)

Two-dimensional electronic structure in InAs-GaSb superlattices

Solid state communications, 1978-06, Vol.26 (9), p.589-592

1978

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Investigation of Energy Traps and Phosphorescence in Zinc Silicate Phosphors by Photostimulated Emission

Journal of the Electrochemical Society, 1980-01, Vol.127 (11), p.2458-2464

1980

Volltextzugriff (PDF)

Experimental test of the non-thermal theory of laser annealing using silicon on sapphire

Physics letters. A, 1980-06, Vol.77 (5), p.375-377

1980

Volltextzugriff (PDF)

Resonance enhanced umklapp Raman processes in GaAs-Ga1−xAlxAs superlattices

Solid state communications, 1978-02, Vol.25 (6), p.381-384

1978

Volltextzugriff (PDF)

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When are transmission-line effects important for on-chip interconnections?

A new semiconductor superlattice

VLSI on-chip interconnection performance simulations and measurements

Performance trends in high-end processors

High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

Observation of semiconductor-semimetal transition in InAs-GaSb superlattices

Design and experimental technology for 0.1-μm gate-length low-temperature operation FET's

Effects of Quantum States on the Photocurrent in a "Superlattice"

Effects of Dynamic External Pair Breaking in Superconducting Films

Spreading resistance in submicron MOSFET's

Stress-relieved regrowth of silicon on sapphire by laser annealing

Device-grade ultra-shallow junctions fabricated with antimony

Frequency-dependent crosstalk simulation for on-chip interconnections

Influence of an electric field on beam-induced adhesion enhancement

Inverter performance of deep-submicrometer MOSFETs

Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2

Cosmic ray induced soft error rate in VLSI circuits

In1-xGaxAs/GaSb1-yAsy Heterojunctions by Molecular Beam Epitaxy

Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits

Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing

Stability and SER analysis of static RAM cells

Two-dimensional electronic structure in InAs-GaSb superlattices

Investigation of Energy Traps and Phosphorescence in Zinc Silicate Phosphors by Photostimulated Emission

Experimental test of the non-thermal theory of laser annealing using silicon on sapphire

Resonance enhanced umklapp Raman processes in GaAs-Ga1−xAlxAs superlattices

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