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Nitride passivation of the interface between high-k dielectrics and SiGe

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(001) interfaces

Applied surface science, 2016-03, Vol.366, p.455-463

2016

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Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization

The Journal of chemical physics, 2017-02, Vol.146 (5), p.052808-052808

2017

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The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

The Journal of chemical physics, 2015-10, Vol.143 (16), p.164711-164711

2015

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Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

Surface science, 2014-12, Vol.630, p.273-279

2014

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Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a‑Al2O3/SiGe Interfaces

ACS applied materials & interfaces, 2015-12, Vol.7 (47), p.26275-26283

2015

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Energy gaps, magnetism, and electric-field effects in bilayer graphene nanoribbons

Physical review. B, Condensed matter and materials physics, 2008-07, Vol.78 (4), Article 045404

2008

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Density functional study of ternary topological insulator thin films

Physical review. B, Condensed matter and materials physics, 2011-06, Vol.83 (23), Article 235108

2011

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Effects of edge magnetism and external electric field on energy gaps in multilayer graphene nanoribbons

Physical review. B, Condensed matter and materials physics, 2010-09, Vol.82 (11), Article 115426

2010

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Ab initio theory of gate induced gaps in graphene bilayers

Physical review. B, Condensed matter and materials physics, 2007-04, Vol.75 (15), Article 155115

2007

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Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (4), Article 045414

2010

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Chemically selective formation of Si–O–Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)

Surface science, 2016-10, Vol.652, p.322-333

2016

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Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al 2 O 3 /SiGe Interfaces

ACS applied materials & interfaces, 2015-12, Vol.7 (47), p.26275-26283

2015

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First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3775-3780

2017

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Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H sub(2)O sub(2)(g) and trimethylaluminum dosing

Surface science, 2014-12, Vol.630, p.273-279

2014

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Combined wet and dry cleaning of SiGe(001)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-07, Vol.33 (4)

2015

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The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

The Journal of chemical physics, 2015-10, Vol.143 (16)

2015

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Density functional theory based study of graphene and dielectric oxide interfaces

Journal of physics. Condensed matter, 2011-12, Vol.23 (50), p.505503-8

2011

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Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects

Solid state communications, 2012-08, Vol.152 (15), p.1497-1502

2012

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Dielectric capping effects on binary and ternary topological insulator surface states

Physical review. B, Condensed matter and materials physics, 2011-10, Vol.84 (15), Article 155105

2011

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(Invited) Rapid In-Situ Carbon and Oxygen Cleaning of In 0.53 Ga 0.47 As(001) and Si 0.5 Ge 0.5 (110) Surfaces via a H 2 RF Downstream Plasma

ECS transactions, 2016-05, Vol.72 (4), p.291-302

2016

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Density-functional study of bulk silicon lightly doped with manganese

Physical review. B, Condensed matter and materials physics, 2008-04, Vol.77 (15), Article 155202

2008

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Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects: Exploring Graphene, Recent Research Advances

Solid state communications, 2012, Vol.152 (15), p.1497-1502

2012

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Thin Film Electronic Properties of Ternary Topological Insulator

MRS proceedings, 2012, Vol.1393 (1), p.6-11, Article mrsf11-1393-l03-02

2012

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Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si 0.5 Ge 0.5 (110) for a MIS structure via H 2 O 2 (g) functionalization

The Journal of chemical physics, 2017-02, Vol.146 (5), p.052808

2017

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Nitride passivation of the interface between high-k dielectrics and SiGe

Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(001) interfaces

Formation of atomically ordered and chemically selective Si—O—Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a‑Al2O3/SiGe Interfaces

Energy gaps, magnetism, and electric-field effects in bilayer graphene nanoribbons

Density functional study of ternary topological insulator thin films

Effects of edge magnetism and external electric field on energy gaps in multilayer graphene nanoribbons

Ab initio theory of gate induced gaps in graphene bilayers

Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes

Chemically selective formation of Si–O–Al on SiGe(110) and (001) for ALD nucleation using H2O2(g)

Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al 2 O 3 /SiGe Interfaces

First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance

Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H sub(2)O sub(2)(g) and trimethylaluminum dosing

Combined wet and dry cleaning of SiGe(001)

The influence of surface preparation on low temperature HfO{sub 2} ALD on InGaAs (001) and (110) surfaces

Density functional theory based study of graphene and dielectric oxide interfaces

Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects

Dielectric capping effects on binary and ternary topological insulator surface states

(Invited) Rapid In-Situ Carbon and Oxygen Cleaning of In 0.53 Ga 0.47 As(001) and Si 0.5 Ge 0.5 (110) Surfaces via a H 2 RF Downstream Plasma

Density-functional study of bulk silicon lightly doped with manganese

Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects: Exploring Graphene, Recent Research Advances

Thin Film Electronic Properties of Ternary Topological Insulator

Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si 0.5 Ge 0.5 (110) for a MIS structure via H 2 O 2 (g) functionalization

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