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Spectroscopic analysis of Al and N diffusion in HfO2

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Modeling of boron and phosphorus implantation into (100) Germanium

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.91-98

2005

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Local structural phase determination of Ni silicide thin films using EXAFS

Physica status solidi. C, 2012-10, Vol.9 (10-11), p.2184-2188

2012

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Subtle local structural variations in oxygen deficient niobium germanate thin film glasses as revealed by x-ray absorption spectroscopy

Journal of physics. Conference series, 2016-05, Vol.712 (1), p.12103

2016

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Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS

Physica status solidi. A, Applications and materials science, 2012-04, Vol.209 (4), p.679-682

2012

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Implantation and activation of high concentrations of boron in Germanium

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2416-2421

2005

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Spectroscopic analysis of Al and N diffusion in HfO2

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Spectroscopic analysis of Al and N diffusion in HfO{sub 2}

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Modeling of boron and phosphorus implantation into (100) Germanium

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.91-98

2005

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Zr-induced structural changes in Hf1−x Zr x O2 high-k thin films

Applied physics. A, Materials science & processing, 2014-10, Vol.117 (1), p.93-96

2014

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Zr-induced structural changes in Hf1−xZrxO2 high-k thin films

Applied physics. A, Materials science & processing, 2014, Vol.117 (1), p.93-96

2014

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Local structural modifications of the HfO 2 layer in the Al 2 O 3 capped high‐ k dielectric films as probed by EXAFS

Physica status solidi. A, Applications and materials science, 2012-04, Vol.209 (4), p.679-682

2012

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Local structural phase determination of Ni silicide thin films using EXAFS: Local structural phase determination of Ni silicide thin films using EXAFS

Physica status solidi. C, 2012-08, Vol.9 (10-11)

2012

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Synchrotron XPS and EXAFS identification of chemical state and crystal phase changes of HfO2 films doped with Si, N, Al, and La

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.82-83

2010

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Determining the Ratio of the Precipitated versus Substituted Arsenic by XAFS and SIMS in Heavy Dose Arsenic Implants in Silicon

MRS proceedings, 2001, Vol.669, Article J5.8

2001

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Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy

MRS proceedings, 2005, Vol.864, Article E7.8

2005

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Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers

MRS proceedings, 2004, Vol.810, Article C11.10

2004

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The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS

MRS proceedings, 2002, Vol.717, Article C3.6

2002

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Non-routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry

MRS proceedings, 2002, Vol.717, Article C6.1/B9.1

2002

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Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.156-157

2008

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Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

2009 International Workshop on Junction Technology, 2009, p.64-68

2009

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The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques

Microelectronics, 2005-03, Vol.36 (3-6), p.522-526

2005

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Arsenic clustering and precipitation analysis in ion-implanted Si wafers by X-ray absorption spectroscopy and SIMS

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432), 2000, p.600-603

2000

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Oxidative stress in asthma: Part of the puzzle

Pediatric allergy and immunology, 2018-12, Vol.29 (8), p.789-800

2018

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Deep learning in medical imaging and radiation therapy

Medical physics (Lancaster), 2019-01, Vol.46 (1), p.e1-e36

2019

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Spectroscopic analysis of Al and N diffusion in HfO2

Modeling of boron and phosphorus implantation into (100) Germanium

Local structural phase determination of Ni silicide thin films using EXAFS

Subtle local structural variations in oxygen deficient niobium germanate thin film glasses as revealed by x-ray absorption spectroscopy

Local structural modifications of the HfO2 layer in the Al2O3 capped high-k dielectric films as probed by EXAFS

Implantation and activation of high concentrations of boron in Germanium

Spectroscopic analysis of Al and N diffusion in HfO2

Spectroscopic analysis of Al and N diffusion in HfO{sub 2}

Modeling of boron and phosphorus implantation into (100) Germanium

Zr-induced structural changes in Hf1−x Zr x O2 high-k thin films

Zr-induced structural changes in Hf1−xZrxO2 high-k thin films

Local structural modifications of the HfO 2 layer in the Al 2 O 3 capped high‐ k dielectric films as probed by EXAFS

Local structural phase determination of Ni silicide thin films using EXAFS: Local structural phase determination of Ni silicide thin films using EXAFS

Synchrotron XPS and EXAFS identification of chemical state and crystal phase changes of HfO2 films doped with Si, N, Al, and La

Determining the Ratio of the Precipitated versus Substituted Arsenic by XAFS and SIMS in Heavy Dose Arsenic Implants in Silicon

Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy

Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers

The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS

Non-routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry

Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit

Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

The local structural characterization of the inactive clusters in B, BF2 and BF3 implanted Si wafers using X-ray techniques

Arsenic clustering and precipitation analysis in ion-implanted Si wafers by X-ray absorption spectroscopy and SIMS

Oxidative stress in asthma: Part of the puzzle

Deep learning in medical imaging and radiation therapy

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