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Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

Journal of applied physics, 2015-11, Vol.118 (18)

2015

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Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2050-2055

2009

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Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2171-2175

2014

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Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2413-2418

2007

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Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3435-3441

2004

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Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions

IEEE transactions on nuclear science, 2001-04, Vol.48 (2), p.225-231

2001

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Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

IEEE transactions on nuclear science, 2005-08, Vol.52 (4), p.1148-1155

2005

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Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.1025-1029

2007

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Simulation Tool for the Prediction of Heavy Ion Cross Section of Innovative 130-nm SRAMs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2036-2041

2008

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Analysis of Quasi-Monoenergetic Neutron and Proton SEU Cross Sections for Terrestrial Applications

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1890-1896

2006

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Effects of beam spot size on the correlation between laser and heavy ion SEU testing

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3708-3715

2004

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Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $\mu$m Inverter Chain

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2001-2006

2008

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Why are SCE overestimated in FD-SOI MOSFETs?

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.304-307

2013

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Study of the Thermal Behavior of the OSL Integrated Sensor Response

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2272-2275

2007

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Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2332-2339

2005

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Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

IEEE transactions on nuclear science, 2005-10, Vol.52 (5), p.1538-1544

2005

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Simultaneous Evaluation of TID and Displacement Damage Dose Using a Single OSL Sensor

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3713-3717

2006

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Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors

2023 International Conference on Noise and Fluctuations (ICNF), 2023, p.1-4

2023

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Charge Sharing Study in the Case of Neutron Induced SEU on 130 nm Bulk SRAM Modeled by 3-D Device Simulation

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1897-1901

2006

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Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2020, p.1-4

2020

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Methodology to compute neutron-Induced Alphas contribution on the SEU Cross section in sensitive RAMs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3291-3297

2004

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Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2799-2804

2004

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Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulation

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2239-2244

2003

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Study of basic mechanisms induced by an ionizing particle on simple structures

IEEE transactions on nuclear science, 2000-06, Vol.47 (3), p.519-526

2000

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Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2019, p.01-04

2019

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Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications

Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM

Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments

Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions

Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity

Simulation Tool for the Prediction of Heavy Ion Cross Section of Innovative 130-nm SRAMs

Analysis of Quasi-Monoenergetic Neutron and Proton SEU Cross Sections for Terrestrial Applications

Effects of beam spot size on the correlation between laser and heavy ion SEU testing

Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $\mu$m Inverter Chain

Why are SCE overestimated in FD-SOI MOSFETs?

Study of the Thermal Behavior of the OSL Integrated Sensor Response

Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions

Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

Simultaneous Evaluation of TID and Displacement Damage Dose Using a Single OSL Sensor

Low Frequency Noise Study of X-ray Irradiated Si/SiGe:C BiCMOS Technology Bipolar Transistors

Charge Sharing Study in the Case of Neutron Induced SEU on 130 nm Bulk SRAM Modeled by 3-D Device Simulation

Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray

Methodology to compute neutron-Induced Alphas contribution on the SEU Cross section in sensitive RAMs

Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation

Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulation

Study of basic mechanisms induced by an ionizing particle on simple structures

Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors

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