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Recent advances on dielectrics technology for SiC and GaN power devices

Applied surface science, 2014-05, Vol.301, p.9-18

2014

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Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Journal of physics. D, Applied physics, 2021-02, Vol.54 (5), p.55101

2021

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Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology, 2020-03, Vol.31 (12), p.125203-125203

2020

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Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Semiconductor science and technology, 2014-07, Vol.29 (7), p.75018

2014

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Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science, 2012-08, Vol.258 (21), p.8324-8333

2012

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Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

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Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-4

2023

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Voids in Silicon by He Implantation: From Basic to Applications

Journal of materials research, 2000-07, Vol.15 (7), p.1449-1477

2000

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Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600357-n/a

2017

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Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-6

2021

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Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs

Materials science forum, 2023-05, Vol.1090, p.113-117

2023

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Role of interface/border traps on the threshold voltage instability of SiC power transistors

Solid-state electronics, 2023-09, Vol.207, p.108699, Article 108699

2023

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Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Materials science forum, 2019-07, Vol.963, p.788-791

2019

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SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Materials science forum, 2019-07, Vol.963, p.230-235

2019

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Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Materials science forum, 2010-01, Vol.645-648, p.713-716

2010

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Radiation damage and implanted He atom interaction during void formation in silicon

Applied physics letters, 1997-09, Vol.71 (12), p.1673-1675

1997

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Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Materials science in semiconductor processing, 2019-07, Vol.97, p.62-66

2019

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Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Materials science in semiconductor processing, 2019-04, Vol.93, p.290-294

2019

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SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.3B.3-1-3B.3-5

2022

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Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

Materials science forum, 2020-07, Vol.1004, p.433-438

2020

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Effect of SiO 2 interlayer on the properties of Al 2 O 3 thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates: Effect of SiO 2 interlayer on the properties of Al 2 O 3 thin films

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600365

2017

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Effect of SiO sub(2) interlayer on the properties of Al sub(2)O sub(3) thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-np

2017

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Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.5B.3-1-5B.3-6

2022

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Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), 2020, p.1-P.10

2020

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Temperature dependence of the c-axis drift mobility in 4H–SiC

Microelectronic engineering, 2006, Vol.83 (1), p.45-47

2006

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Recent advances on dielectrics technology for SiC and GaN power devices

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Critical issues for interfaces to p-type SiC and GaN in power devices

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs

Voids in Silicon by He Implantation: From Basic to Applications

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects

Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs

Role of interface/border traps on the threshold voltage instability of SiC power transistors

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Radiation damage and implanted He atom interaction during void formation in silicon

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

Effect of SiO 2 interlayer on the properties of Al 2 O 3 thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates: Effect of SiO 2 interlayer on the properties of Al 2 O 3 thin films

Effect of SiO sub(2) interlayer on the properties of Al sub(2)O sub(3) thin films grown by plasma enhanced atomic layer deposition on 4H-SiC substrates

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests

Temperature dependence of the c-axis drift mobility in 4H–SiC

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