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In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers

Applied physics letters, 2010-04, Vol.96 (15), p.153105-153105-3

2010

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Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Applied physics letters, 2005-11, Vol.87 (22), p.221911-221911-3

2005

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Extremely high electron mobility in Si/SiGe modulation-doped heterostructures

Applied physics letters, 1995-02, Vol.66 (9), p.1077-1079

1995

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On the origin of spatial nonuniformities in the composition of pulsed-laser-deposited films

Journal of applied physics, 1991-11, Vol.70 (10), p.5629-5635

Saenger, K. L.

1991

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Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

IEEE electron device letters, 2005-11, Vol.26 (11), p.817-819

2005

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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures

Physical review letters, 1994-12, Vol.73 (25), p.3447-3450

1994

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Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering

Journal of applied physics, 1999-12, Vol.86 (11), p.6084-6087

1999

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New techniques for diffusion studies of thin polymer films

Journal of plastic film & sheeting, 1988-10, Vol.4 (4), p.308-317

1988

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Submicrometer Platinum Electrodes by Through-Mask Plating

Journal of the Electrochemical Society, 2001-11, Vol.148 (11), p.C758

2001

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An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si

Journal of applied physics, 2007-05, Vol.101 (10)

2007

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Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

IEEE electron device letters, 2005-03, Vol.26 (3), p.178-180

2005

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A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy

Journal of applied physics, 2007-01, Vol.101 (2), p.024908-024908-8

2007

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Studies of atomic oxygen in O2+CF4 rf discharges by two-photon laser-induced fluorescence and optical emission spectroscopy

The Journal of chemical physics, 1986-03, Vol.84 (5), p.2668-2674

1986

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Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors

Journal of the European Ceramic Society, 1999, Vol.19 (6-7), p.1457-1461

1999

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Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization

Journal of applied physics, 2007-04, Vol.101 (8), p.084912-084912-7

2007

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In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines

Applied physics letters, 1995-04, Vol.66 (14), p.1732-1734

1995

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Mixed Orientation Si–Si Interfaces by Hydrophilic Bonding and High Temperature Oxide Dissolution

Journal of the Electrochemical Society, 2008, Vol.155 (2), p.H80

2008

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Pulsed laser deposition of diamond-like carbon films

Journal of applied physics, 1992-06, Vol.71 (11), p.5675-5684

1992

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A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines

Journal of applied physics, 1995-12, Vol.78 (12), p.7040-7044

1995

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Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer

Journal of materials research, 1997-02, Vol.12 (2), p.304-307

1997

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Buried, self-aligned barrier layer structures for perovskite-based memory devices comprising Pt or Ir bottom electrodes on silicon-contributing substrates

Journal of applied physics, 1998-01, Vol.83 (2), p.802-813

1998

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Thin-film Bi-Sr-Ca-Cu-O high-temperature superconductors using pulsed laser evaporation from sintered disks

Applied physics letters, 1988-08, Vol.53 (6), p.532-533

1988

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An interferometric calorimeter for thin-film thermal diffusivity measurements

Journal of applied physics, 1989-02, Vol.65 (4), p.1447-1452

SAENGER, K. L

1989

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Vapor deposition processes for amorphous carbon films with sp3 fractions approaching diamond

Journal of applied physics, 1991-08, Vol.70 (3), p.1706-1711

1991

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Thickness‐direction coefficient of thermal expansion measurement of thin polymer films

Review of scientific instruments, 1991-02, Vol.62 (2), p.422-430

1991

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In situ x-ray diffraction study of graphitic carbon formed during heating and cooling of amorphous-C/Ni bilayers

Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Extremely high electron mobility in Si/SiGe modulation-doped heterostructures

On the origin of spatial nonuniformities in the composition of pulsed-laser-deposited films

Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping

Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures

Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering

New techniques for diffusion studies of thin polymer films

Submicrometer Platinum Electrodes by Through-Mask Plating

An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si

Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias

A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy

Studies of atomic oxygen in O2+CF4 rf discharges by two-photon laser-induced fluorescence and optical emission spectroscopy

Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors

Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization

In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines

Mixed Orientation Si–Si Interfaces by Hydrophilic Bonding and High Temperature Oxide Dissolution

Pulsed laser deposition of diamond-like carbon films

A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines

Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer

Buried, self-aligned barrier layer structures for perovskite-based memory devices comprising Pt or Ir bottom electrodes on silicon-contributing substrates

Thin-film Bi-Sr-Ca-Cu-O high-temperature superconductors using pulsed laser evaporation from sintered disks

An interferometric calorimeter for thin-film thermal diffusivity measurements

Vapor deposition processes for amorphous carbon films with sp3 fractions approaching diamond

Thickness‐direction coefficient of thermal expansion measurement of thin polymer films

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