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Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Journal of applied physics, 2015-03, Vol.117 (11)

2015

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Growth of high-quality ZnMgO epilayers and ZnO∕ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire

Applied physics letters, 2005-08, Vol.87 (9)

2005

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Cyclotron resonance study in InAs/AlSb quantum well heterostructures with two occupied electronic subbands

Journal of applied physics, 2012-05, Vol.111 (9), p.093711-093711-7

2012

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Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas

Semiconductors (Woodbury, N.Y.), 2012-09, Vol.46 (9), p.1163-1170

2012

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Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1564-1570

2015

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Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.124-129

2015

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Investigation of the thermal stability of metastable GeSn epitaxial layers

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1548-1553

2016

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Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T

Semiconductors (Woodbury, N.Y.), 2015-12, Vol.49 (12), p.1616-1622

2015

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Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1396-1401

2012

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Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2015-01, Vol.49 (1), p.130-133

2015

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Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1402-1406

2012

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Large g -factor enhancement in high-mobility InAs/AlSb quantum wells

Applied physics letters, 2002-09, Vol.81 (10), p.1833-1835

2002

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Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy

Thin solid films, 2016-08, Vol.613, p.68-74

2016

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Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells

Semiconductors (Woodbury, N.Y.), 2010-05, Vol.44 (5), p.616-622

2010

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Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1376-1380

2012

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Diagnostics of quantum cascade structures by optical methods in the near infrared region

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1411-1414

2012

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Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Physica Status Solidi (b), 2007-05, Vol.244 (5), p.1700-1705

2007

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Type II–type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping

Journal of applied physics, 2013-04, Vol.113 (16)

2013

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Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1367-1371

Sadofyev, Yu. G.

2012

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Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Journal of physics. Conference series, 2009-02, Vol.150 (2), p.022100

2009

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Infrared light-induced beating of Shubnikov–de Haas oscillations in MBE grown InAs/AlSb quantum wells

Journal of crystal growth, 2005-05, Vol.278 (1), p.661-665

2005

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Terahertz spectroscopy of quantum-well narrow-bandgap HgTe/CdTe-based heterostructures

JETP letters, 2010-12, Vol.92 (11), p.756-761

2010

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Silicon-germanium nanostructures with high germanium concentration

Bulletin of the Russian Academy of Sciences. Physics, 2014, Vol.78 (1), p.29-33

2014

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Erratum to: “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy”

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (3), p.419-419

2015

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GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.405-412

2010

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Effect of electron-electron interaction on cyclotron resonance in high-mobility InAs/AlSb quantum wells

Growth of high-quality ZnMgO epilayers and ZnO∕ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire

Cyclotron resonance study in InAs/AlSb quantum well heterostructures with two occupied electronic subbands

Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas

Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

Investigation of the thermal stability of metastable GeSn epitaxial layers

Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T

Features of the persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells and a tunneling-transparent barrier

Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy

Study of methods for lowering the lasing frequency of a terahertz quantum-cascade laser based on two quantum wells

Large g -factor enhancement in high-mobility InAs/AlSb quantum wells

Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy

Persistent photoconductivity in InAs/AlSb heterostructures with double quantum wells

Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

Diagnostics of quantum cascade structures by optical methods in the near infrared region

Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Type II–type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping

Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Infrared light-induced beating of Shubnikov–de Haas oscillations in MBE grown InAs/AlSb quantum wells

Terahertz spectroscopy of quantum-well narrow-bandgap HgTe/CdTe-based heterostructures

Silicon-germanium nanostructures with high germanium concentration

Erratum to: “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy”

GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm

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