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X-ray Multiple Diffraction in Renninger Scanning Mode: Simulation of Data Recorded using Synchrotron Radiation

Journal of applied crystallography, 1996-08, Vol.29 (4), p.325-330

1996

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Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing

Semiconductor science and technology, 1992-06, Vol.7 (6), p.744-751

1992

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A photomodulated spectroscopy study of InxGa1-xAs/GaAs superlattices and quantum wells

Journal of applied physics, 1991-06, Vol.69 (11), p.7836-7843

1991

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Growth of GaxIn1-xAs by low-pressure metalorganic vapor-phase epitaxy

Journal of applied physics, 1986-09, Vol.60 (6), p.2003-2007

1986

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The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxy

Canadian journal of physics, 1989-04, Vol.67 (4), p.330-338

1989

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Threshold behavior of (GaAl)As-GaAs lasers at low temperatures

Journal of applied physics, 1978-01, Vol.49 (1), p.29-34

1978

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Using synchrotron radiation x-ray multiple diffraction to examine the lattice coherency of semiconductor surfaces and epitaxial layers

Journal of applied physics, 1996-04, Vol.79 (7), p.3492-3498

1996

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Luminescence and photomodulated transmission measurements in InGaAs/GaAs modulation doped single quantum wells

Journal of applied physics, 1994-03, Vol.75 (6), p.3071-3074

1994

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Raman Scattering from InGaAs/GaAs strained-layer superlattices

Solid state communications, 1988-10, Vol.68 (2), p.211-214

1988

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AES sputter depth profiles applied to interface analysis of GaInAs/InP grown by atmospheric pressure MOCVD

Applied surface science, 1990-04, Vol.44 (2), p.161-164

1990

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Franz-Keldysh oscillations in the photomodulated spectra of an In0.12Ga0.88As/GaAs strained-layer superlattice

Physical review. B, Condensed matter, 1990-11, Vol.42 (15), p.9480-9485

1990

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Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPE

Journal of crystal growth, 1988, Vol.93 (1-4), p.336-341

1988

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Optical studies in InxGa1-xAs/GaAs strained-layer superlattices

Physical review. B, Condensed matter, 1988-10, Vol.38 (12), p.8473-8476

1988

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Absorption edge effects on the temperature dependence of threshold currents in GaAS laser diodes

Solid state communications, 1977-01, Vol.22 (8), p.489-492

1977

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Synchrotron radiation multiple diffraction study of Al0.304Ga0.172 In0.524 as MOVPE grown onto InP(001)

Journal of crystal growth, 1997, Vol.172 (3-4), p.284-290

1997

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Enhancement of compositional disordering in strained InxGa1-xAs/GaAs quantum wells by Zn diffusion

Superlattices and microstructures, 1991, Vol.10 (2), p.225-230

1991

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Effects of thermal annealing on the confined electronic states of InxGa1−xAs/GaAs strained-layer superlattices

Superlattices and microstructures, 1989-01, Vol.5 (2), p.273-278

1989

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A photomodulated spectroscopy study of In x Ga1− x As/GaAs superlattices and quantum wells

Journal of applied physics, 1991-06, Vol.69 (11), p.7836-7843

1991

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Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524As MOVPE grown onto InP(001)

Journal of crystal growth, 1997-03, Vol.172 (3-4), p.284-290

1997

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Growth of Ga x In1− x As by low-pressure metalorganic vapor-phase epitaxy

Journal of applied physics, 1986-09, Vol.60 (6), p.2003-2007

1986

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Deep-level transient spectroscopic investigation of the EL2 deep-level in metalorganic chemical vapour deposited Ga 1− x In x As epilayers

Canadian journal of physics, 1989-04, Vol.67 (4), p.283-286

1989

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Threshold behavior of /GaAl/As-GaAs lasers at low temperatures

Journal of applied physics, 1978-01, Vol.49, p.29-34

1978

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InP (and GaAs) substrate stabilization by the presence of GaAs (and InP) in a metal-organic vapour-phase epitaxy system

Canadian journal of physics, 1987-08, Vol.65 (8), p.1047-1052

1987

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Franz-Keldysh oscillations in the photomodulated spectra of an In 0.12 Ga 0.88 As/GaAs strained-layer superlattice

Physical review. B, Condensed matter, 1990-11, Vol.42 (15), p.9480-9485

1990

Volltextzugriff (PDF)

Optical studies in In x Ga 1 − x As/GaAs strained-layer superlattices

Physical review. B, Condensed matter, 1988-10, Vol.38 (12), p.8473-8476

1988

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X-ray Multiple Diffraction in Renninger Scanning Mode: Simulation of Data Recorded using Synchrotron Radiation

Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing

A photomodulated spectroscopy study of InxGa1-xAs/GaAs superlattices and quantum wells

Growth of GaxIn1-xAs by low-pressure metalorganic vapor-phase epitaxy

The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxy

Threshold behavior of (GaAl)As-GaAs lasers at low temperatures

Using synchrotron radiation x-ray multiple diffraction to examine the lattice coherency of semiconductor surfaces and epitaxial layers

Luminescence and photomodulated transmission measurements in InGaAs/GaAs modulation doped single quantum wells

Raman Scattering from InGaAs/GaAs strained-layer superlattices

AES sputter depth profiles applied to interface analysis of GaInAs/InP grown by atmospheric pressure MOCVD

Franz-Keldysh oscillations in the photomodulated spectra of an In0.12Ga0.88As/GaAs strained-layer superlattice

Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPE

Optical studies in InxGa1-xAs/GaAs strained-layer superlattices

Absorption edge effects on the temperature dependence of threshold currents in GaAS laser diodes

Synchrotron radiation multiple diffraction study of Al0.304Ga0.172 In0.524 as MOVPE grown onto InP(001)

Enhancement of compositional disordering in strained InxGa1-xAs/GaAs quantum wells by Zn diffusion

Effects of thermal annealing on the confined electronic states of InxGa1−xAs/GaAs strained-layer superlattices

A photomodulated spectroscopy study of In x Ga1− x As/GaAs superlattices and quantum wells

Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524As MOVPE grown onto InP(001)

Growth of Ga x In1− x As by low-pressure metalorganic vapor-phase epitaxy

Deep-level transient spectroscopic investigation of the EL2 deep-level in metalorganic chemical vapour deposited Ga 1− x In x As epilayers

Threshold behavior of /GaAl/As-GaAs lasers at low temperatures

InP (and GaAs) substrate stabilization by the presence of GaAs (and InP) in a metal-organic vapour-phase epitaxy system

Franz-Keldysh oscillations in the photomodulated spectra of an In 0.12 Ga 0.88 As/GaAs strained-layer superlattice

Optical studies in In x Ga 1 − x As/GaAs strained-layer superlattices

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